This　paper　presents　a　MTJ　Based　non-volatile　SRAM　in　45　nm　technology.　It　combines　fast　and　low　power　partners　with　time-division　satisfaction　of　high　performance　and　low　leakage　energy　requirements.　It　can　store　and　restore　the　data　in　memory　cells,　inputs,　outputs,　clock,　and　address　signals.　Simulations　show　that　the　maximum　frequency　can　reach　4.5　GHz.　When　the　sleep　time　is　more　than　105　seconds,　there　are　great　power　saving.　©　2016　IEEE.