Luminescence properties of GaAs quantum Dot-in-Nanowire structure for quantum photonics - Details

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Abstract：

We　investigate　light　characters　of　GaAs　quantum　dot-in-nanowire　structure　by　cathodoluminscence.　Exciton　intensity　of　QDs　is　5　times　stronger　than　the　nanowire.　Promising　properties　attribute　to　cavity　enhancement　and　quantum　confinement　by　surrounding　AlGaAs　barriers.　©　OSA　2015.

Keyword：

Semiconducting gallium Photonics Nanocrystals Aluminum alloys Semiconductor quantum dots Gallium arsenide III-V semiconductors Aluminum gallium arsenide Semiconductor alloys Nanowires Luminescence

Author Community：

[ 1 ] [Wang, Li]Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing; 100124, China
[ 2 ] [Yu, Ying]State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors Chinese Academy of Sciences, Beijing; 100083, China
[ 3 ] [Bin, Wei]Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing; 100124, China
[ 4 ] [Mao, Shengcheng]Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing; 100124, China
[ 5 ] [Han, Xiaodong]Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing; 100124, China
[ 6 ] [Niu, Zhichuan]State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors Chinese Academy of Sciences, Beijing; 100083, China
[ 7 ] [Ji, Yuan]Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing; 100124, China

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Luminescence properties of GaAs quantum dot-in-nanowire structure for quantum photonics
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Year： 2015

Language： English

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

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Chinese Cited Count：

30 Days PV： 11

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材料科学与工程学院本学院/部未明确归属的数据

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