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Abstract：
A separate-absorption-charge-multiplication Ge/Si avalanche photodiode was designed. The devices have high dark current at low reverse bias, because of surface impurity and rough sidewall. A guard-ring structure and in-situ doping was introduced to decrease leakage-current. © OSA 2014
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ISSN： 2162-108X
Year： 2014
Volume： 2014-November
Language： English
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ESI Highly Cited Papers on the List： 0 Unfold All
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30 Days PV： 4
