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Abstract：
In this paper, a reasonable model under the thermal void effect of the Insulate Gate Bipolar Transistor is been built. Finite element analysis (FE) is introduced to analyze thermal characteristics of the model. The results indicate that the heat distribution of IGBT is determined of voids with different sizes, positions and the intensity. Besides, the synergy of void effect and heat coupling effect would significantly increase the temperature of the chip. © (2012) Trans Tech Publications, Switzerland.
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ISSN： 1022-6680
Year： 2012
Volume： 548
Page： 415-420
Language： English
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ESI Highly Cited Papers on the List： 0 Unfold All
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30 Days PV： 9
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