Degradation and recovery property of Schottky Barrier height of AlGaN/GaN high electron mobility transistors under reverse AC electrical stress - Details

Author：

Shi, Lei (Shi, Lei.) | Feng, Shi-Wei (Feng, Shi-Wei.) (Scholars：冯士维) | Guo, Chun-Sheng (Guo, Chun-Sheng.) | Zhu, Hui (Zhu, Hui.)

Indexed by：

EI Scopus

Abstract：

We　apply　a　reverse　AC　electrical　stress　on　the　Gate　of　AlGaN/GaN　high　electron　mobility　transistors　(HEMTs).　The　change　of　Schottky　Barrier　height　(SBH)　with　respect　to　time　is　derived　from　the　I-V　and　C-V　characteristics,　respectively.　The　SBHs　calculated　from　the　two　methods　show　similar　decreasing　trend.　However,　the　one　from　I-V　method　recovers　partly　after　stress　is　removed.　The　behaviour　is　attributed　to　the　traps　in　AlGaN　barrier　and　surface　state　of　the　gate　as　a　result　of　the　electrical　stress,　and　the　recovery　of　surface　state　is　the　main　factor　for　the　recovery　phenomena.　©　2012　IEEE.

Keyword：

III-V semiconductors Gallium nitride Gallium alloys Semiconductor metal boundaries Aluminum gallium nitride Electron mobility Aluminum alloys Integrated circuits Schottky barrier diodes Semiconductor alloys Surface states Recovery High electron mobility transistors

Author Community：

[ 1 ] [Shi, Lei]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Feng, Shi-Wei]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Guo, Chun-Sheng]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Zhu, Hui]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China