Design and fabrication of 980nm three-active regions high power semiconductor lasers - Details

Author：

Wang, Zhiqun (Wang, Zhiqun.) | Zhang, Lei (Zhang, Lei.) | Cui, Bifeng (Cui, Bifeng.) | Shen, Guangdi (Shen, Guangdi.)

Indexed by：

EI Scopus

Abstract：

Based　on　the　principle　of　tunnel　regeneration,　three-active　regions　high　power　semiconductor　lasers　were　designed　and　fabricated.　Powered　by　pulse　currents　limited　at　30A,　the　emitting　wavelength　of　998nm,　the　optical　power　output　of　40.48W,　Ith　of　7.95A　and　the　differential　efficiency　of　1.62W/A　were　obtained.　©　2009　IEEE.

Keyword：

High power lasers Fabrication Aluminum gallium arsenide Semiconductor lasers Gallium compounds

Author Community：

[ 1 ] [Wang, Zhiqun]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Pingleyuan 100, Chaoyang District, Beijing 100124, China
[ 2 ] [Zhang, Lei]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Pingleyuan 100, Chaoyang District, Beijing 100124, China
[ 3 ] [Cui, Bifeng]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Pingleyuan 100, Chaoyang District, Beijing 100124, China
[ 4 ] [Shen, Guangdi]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Pingleyuan 100, Chaoyang District, Beijing 100124, China