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Abstract:
The 3-μ m mid-infrared laser has significant application prospects and value in scientific and technical applications such as laser medicine, biomolccular, and optoelectronic countcrmcasures. This paper describes the generation of mid-infrared lasers and the characteristics of various mid-infrared lasers. Based on the Er3+ ion level structure, the main conversion process and existing problems of erbium-doped mid-infrared lasers arc discussed herein. The research progress of erbium-doped mid-infrared lasers based on different substrates is summarized. The problems that need to be solved and the possible technical approaches for high-efficiency, high-power erbium-doped mid-infrared lasers arc envisioned. © 2019 Universitat zu Koln. All rights reserved.
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Laser and Optoelectronics Progress
ISSN: 1006-4125
Year: 2019
Issue: 18
Volume: 56
Cited Count:
SCOPUS Cited Count: 8
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count:
Chinese Cited Count:
30 Days PV: 9
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