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Author:

Fang, C. (Fang, C..) | Wang, S. (Wang, S..) | Hui, Y. (Hui, Y..) | Jiang, M. (Jiang, M..) | Lei, H. (Lei, H..) | Li, Q. (Li, Q..) (Scholars:李强)

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Scopus PKU CSCD

Abstract:

The 3-μ m mid-infrared laser has significant application prospects and value in scientific and technical applications such as laser medicine, biomolccular, and optoelectronic countcrmcasures. This paper describes the generation of mid-infrared lasers and the characteristics of various mid-infrared lasers. Based on the Er3+ ion level structure, the main conversion process and existing problems of erbium-doped mid-infrared lasers arc discussed herein. The research progress of erbium-doped mid-infrared lasers based on different substrates is summarized. The problems that need to be solved and the possible technical approaches for high-efficiency, high-power erbium-doped mid-infrared lasers arc envisioned. © 2019 Universitat zu Koln. All rights reserved.

Keyword:

Erbium-doped laser; Lasers; Mid-infrared laser; Stimulated laser emission; Up-convcrsion

Author Community:

  • [ 1 ] [Fang, C.]Institute of Laser Engineering, Beijing University of Technology, Beijing, 100124, China
  • [ 2 ] [Wang, S.]Institute of Laser Engineering, Beijing University of Technology, Beijing, 100124, China
  • [ 3 ] [Hui, Y.]Institute of Laser Engineering, Beijing University of Technology, Beijing, 100124, China
  • [ 4 ] [Jiang, M.]Institute of Laser Engineering, Beijing University of Technology, Beijing, 100124, China
  • [ 5 ] [Lei, H.]Institute of Laser Engineering, Beijing University of Technology, Beijing, 100124, China
  • [ 6 ] [Li, Q.]Institute of Laser Engineering, Beijing University of Technology, Beijing, 100124, China

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Source :

Laser and Optoelectronics Progress

ISSN: 1006-4125

Year: 2019

Issue: 18

Volume: 56

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 8

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 9

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