A　two-chip　vertical　external　cavity　surface　emitting　laser　with　dual-wavelength　output　is　presented.　The　active　region　of　gain　chip　1,　designed　for　960　nm　wavelength,　is　composed　of　6　repeats　of　strain　uncompensated　In0.185Ga0.815As/GaAs　multiple　quantum　wells,　and　the　active　region　of　gain　chip　2,　targeted　for　1100　nm　emission,　is　consisted　of　16　repeats　of　strain　compensated　In0.26Ga0.74As/GaAs0.94P0.06　multiple　quantum　wells.　Two　1　mm　thick　uncoated　fused　silica　birefringent　filters　are　employed　as　the　tuning　elements,　and　the　shorter　wavelength　can　be　tuned　between　949　and　957　nm,　while　the　longer　wavelength　can　be　changed　from　1071　to　1106　nm　by　rotating　the　filters.　The　total　intracavity　power　under　dual-wavelength　operation　exceeds　36　W　when　the　pump　power　is　10.5　W.　For　the　use　of　intracavity　different　frequency　generation,　the　wavelength　tunability　of　down-converted　mid-infrared　radiation　can　cover　a　wavelength　range　from　6.7　to　9.0　mu　m.