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Author:

Zhang, H. (Zhang, H..) | Deng, J. (Deng, J..) | Kong, L. (Kong, L..) | Li, R. (Li, R..) | Pan, Z. (Pan, Z..) | Bai, Z. (Bai, Z..)

Indexed by:

Scopus PKU CSCD

Abstract:

The latest advance in deposition,property modification and applications of β-Ga 2 O 3 nanowires was tentatively reviewed.The discussions centered on:i) the growth techniques and mechanisms of β-Ga 2 O 3 nanowires,including but not limited to carbothermal reduction,laser ablation,chemical vapor deposition in vapor-liquid-solid or vapor solid modes,thermal evaporation and RF magnetron sputtering of powder target; ii) the synthesis of β-Ga 2 O 3 nanowires catalyst and impact of dopants,including Pd,In and rare-earth metals on properties modification; and iii)potential applications in fabrication of photodiodes,solar-blind detectors and gas sensitive detectors.In addition,the existing technical problems,possible solutions and development trends of β-Ga 2 O 3 nanowire array were also briefly discussed in a though provoking way. © 2018, Journal of Vacuum Science and Technology Publishing House. All right reserved.

Keyword:

Catalyst; Detector; Doping research; Growth mechanism; Β-Ga 2 O 3 nanowires

Author Community:

  • [ 1 ] [Zhang, H.]College of Applied Sciences, Beijing University of Technology, Beijing, 100124, China
  • [ 2 ] [Deng, J.]College of Applied Sciences, Beijing University of Technology, Beijing, 100124, China
  • [ 3 ] [Kong, L.]College of Applied Sciences, Beijing University of Technology, Beijing, 100124, China
  • [ 4 ] [Li, R.]College of Applied Sciences, Beijing University of Technology, Beijing, 100124, China
  • [ 5 ] [Pan, Z.]College of Applied Sciences, Beijing University of Technology, Beijing, 100124, China
  • [ 6 ] [Bai, Z.]College of Applied Sciences, Beijing University of Technology, Beijing, 100124, China

Reprint Author's Address:

  • [Deng, J.]College of Applied Sciences, Beijing University of TechnologyChina

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Source :

Journal of Vacuum Science and Technology

ISSN: 1672-7126

Year: 2018

Issue: 5

Volume: 38

Page: 427-433

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 7

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