Influences of various dielectrics materials on p++ silicon diaphragm - Details

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Effects　of　various　dielectric　materials　on　thermal　stress　in　p++　silicon　diaphragm　were　analyzed.　In　this　work　the　modeling　of　thin　film　deposition　based　on　the　finite　element　analysis　(FEA)　is　described.　The　theoretical　results　predict　the　change　of　mechanical　performance　when　various　dielectric　materials　were　deposited　on　p++　silicon　diaphragm.　©　2001　IEEE.

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[ 1 ] [Wu, J.]Electronic Engineering Department, Beijing Polytechnic University, Beijing Optoelectronic Technology Laboratory, Beijing, 100022, China
[ 2 ] [Zou, D.]Electronic Engineering Department, Beijing Polytechnic University, Beijing Optoelectronic Technology Laboratory, Beijing, 100022, China
[ 3 ] [Gao, G.]Electronic Engineering Department, Beijing Polytechnic University, Beijing Optoelectronic Technology Laboratory, Beijing, 100022, China
[ 4 ] [Li, L.]Electronic Engineering Department, Beijing Polytechnic University, Beijing Optoelectronic Technology Laboratory, Beijing, 100022, China
[ 5 ] [Niu, N.]Electronic Engineering Department, Beijing Polytechnic University, Beijing Optoelectronic Technology Laboratory, Beijing, 100022, China
[ 6 ] [Shen, G.]Electronic Engineering Department, Beijing Polytechnic University, Beijing Optoelectronic Technology Laboratory, Beijing, 100022, China

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2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings

Year： 2001

Volume： 2

Page： 823-826

Language： English

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WoS CC Cited Count： 0

SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

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Chinese Cited Count：

30 Days PV： 6

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信息科学技术学院本学院/部未明确归属的数据

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