The study of novel high brightness 620 nm AlGaInP light emitting diodes - Details

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Abstract：

The　problem　of　conventional　light　emitting　diodes　(LEDs)　was　analyzed.　A　novel　tunnel-regenerated　multiple-active-region　light-emitting　diode　with　high　quantum　efficiency　and　high　brightness　has　been　proposed　and　fabricated.　We　have　proved　theoretically　that　the　efficiency　of　the　electrical　luminescence　and　the　on-axis　luminous　intensity　of　such　novel　LEDs　scaled　linearly　approximately　with　the　number　of　the　active　regions.　The　on-axis　luminous　intensity　of　such　novel　LED　with　only　3　μm　GaP　current　spreading　layer　has　exceeded　5cd　at　20　mA　DC　operation　under　15°　package.　The　ultrahigh　quantum　efficiency　and　ultrahigh　brightness　LED　under　the　low　injection　level　was　realized.　©　2001　IEEE.

Keyword：

high brightness; LED; tunnel junction

Author Community：

[ 1 ] [Guo, X.]Dept. of Electronic Engineering, Beijing Polytechnic University, Beijing Opto-electronic Technology Laboratory, Beijing, 100022, China
[ 2 ] [Wang, G.-H.]Dept. of Electronic Engineering, Beijing Polytechnic University, Beijing Opto-electronic Technology Laboratory, Beijing, 100022, China
[ 3 ] [Zhu, W.-J.]Dept. of Electronic Engineering, Beijing Polytechnic University, Beijing Opto-electronic Technology Laboratory, Beijing, 100022, China
[ 4 ] [Du, J.-Y.]Dept. of Electronic Engineering, Beijing Polytechnic University, Beijing Opto-electronic Technology Laboratory, Beijing, 100022, China
[ 5 ] [Gao, G.]Dept. of Electronic Engineering, Beijing Polytechnic University, Beijing Opto-electronic Technology Laboratory, Beijing, 100022, China
[ 6 ] [Zou, D.-S.]Dept. of Electronic Engineering, Beijing Polytechnic University, Beijing Opto-electronic Technology Laboratory, Beijing, 100022, China
[ 7 ] [Shen, G.-D.]Dept. of Electronic Engineering, Beijing Polytechnic University, Beijing Opto-electronic Technology Laboratory, Beijing, 100022, China
[ 8 ] [Ma, X.-Y.]Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
[ 9 ] [Chen, L.-H.]Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China

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2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings

Year： 2001

Volume： 2

Page： 1252-1254

Language： English

Cited Count：

WoS CC Cited Count：

SCOPUS Cited Count： 1

ESI Highly Cited Papers on the List： 0 Unfold All

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Chinese Cited Count：

30 Days PV： 4

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