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Author:

Yu, H.-P. (Yu, H.-P..) | Sui, Y.-K. (Sui, Y.-K..) | Wang, J. (Wang, J..) | An, G.-P. (An, G.-P..)

Indexed by:

Scopus PKU CSCD

Abstract:

Natural convective has significant effects on the crystal-melt interface shape, temperature field and the stress distribution in Czochralski (CZ) crystal growth. In this paper, two-dimensional numerical simulations were carried out to clarify the effect of buoyancy force on melt motion in a CZ crystal system. At low Reynolds numbers, a laminar model was used, while at large Reynolds numbers, a turbulence model was employed. The present paper investigates the natural convection from a low Grashof number 3 × 106 to a large Grashof number 3 × 1010, which corresponding to small-size CZ system to large-size CZ system. The numerical results show that the flow state is not only related to Grashof number but also the ratio of the melt height to the crucible radius. When Gr is large than a critical value 108, the flow becomes unstable, the laminar model is no longer suitable, and it is found that with the increase of Grashof number, the turbulence flow and intensity becomes stronger and temperature gradient near the interface becomes sharper, which is harmful to the crystal growth.

Keyword:

Czochralski silicon; Natural convective; Numerical simulation

Author Community:

  • [ 1 ] [Yu, H.-P.]College of Mechanical Engineering and Applying Electronic Technique, Beijing University of Technology, Beijing 100022, China
  • [ 2 ] [Sui, Y.-K.]College of Mechanical Engineering and Applying Electronic Technique, Beijing University of Technology, Beijing 100022, China
  • [ 3 ] [Wang, J.]General Research Institute for Nonferrous Metals, Beijing 100088, China
  • [ 4 ] [An, G.-P.]College of Mechanical Engineering and Applying Electronic Technique, Beijing University of Technology, Beijing 100022, China

Reprint Author's Address:

  • [Yu, H.-P.]College of Mechanical Engineering and Applying Electronic Technique, Beijing University of Technology, Beijing 100022, China

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Source :

Journal of Synthetic Crystals

ISSN: 1000-985X

Year: 2006

Issue: 4

Volume: 35

Page: 696-701,695

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 7

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