Design of a novel strained-SI HBT with virtual substrate for high current gain-breakdown voltage product - Details

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Abstract：

In　order　to　weaken　the　lattice　self-heating　effect　of　strained-Si　HBT　with　vertical　substrate,　a　trapezoid　Ge　doping　profile　in　base　is　proposed　and　the　device　model　is　established　with　SILVACO　TCAD.　It　is　shown　that　temperature　coefficient　of　the　device　is　decreased,　which　is　benefit　for　high　power　application,　at　the　expense　of　the　decrease　of　the　current　gain.　Therefore,　a　further　design　of　superjunction　collector　structure　is　presented　to　enhance　the　breakdown　voltage　which　is　irrelevant　to　the　current　gain.　As　a　result,　the　product　of　current　gain-breakdown　voltage　in　the　novel　strained-Si　HBT　with　vertical　substrate　is　1.61　times　higher　that　the　conventional　device,　which　develops　the　high　power　application　of　SiGe　HBTs.　©　2015　IEEE.

Keyword：

Ge doping profile; HBT; Strain-Si; Superjunction collector

Author Community：

[ 1 ] [Jin, D.]Institute of Laser Engineering, Beijing University of Technology, Beijing, 100124, China
[ 2 ] [Jin, D.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 3 ] [Wang, Z.]Institute of Laser Engineering, Beijing University of Technology, Beijing, 100124, China
[ 4 ] [Guo, Y.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 5 ] [Zhang, W.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 6 ] [Zhao, X.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 7 ] [Wang, Q.]Institute of Laser Engineering, Beijing University of Technology, Beijing, 100124, China

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Source ：

International Conference on Communication Technology Proceedings, ICCT

Year： 2016

Volume： 2016-February

Page： 357-360

Language： English

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count： 1

ESI Highly Cited Papers on the List： 0 Unfold All

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Chinese Cited Count：

30 Days PV： 4

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信息科学技术学院本学院/部未明确归属的数据

化学与生命科学学院本学院/部未明确归属的数据

材料科学与工程学院本学院/部未明确归属的数据

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