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Abstract：
Graphene on copper foil produced through chemical vapor deposition has been transferred to different substrates and the Raman signatures from graphene on semi-insulating GaAs, n-GaAs, SiO2 (300 nm)/ Si, boron-doped Si, phosphorus-doped Si have been studied. It spectra from graphene. The obtained results are important for nanometrology of graphene and graphene based devices.
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SOLID STATE COMMUNICATIONS
ISSN： 0038-1098
Year： 2017
Volume： 264
Page： 31-34
2 . 1 0 0
JCR@2022
ESI Discipline： PHYSICS;
ESI HC Threshold：158
CAS Journal Grade：4
Cited Count：
WoS CC Cited Count： 14
SCOPUS Cited Count： 16
ESI Highly Cited Papers on the List： 0 Unfold All
WanFang Cited Count：
Chinese Cited Count：
30 Days PV： 13
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