The　forward　conduction　characteristics　of　lateral　AlGaN/GaN　heterojunction　Schottky　barrier　diode　(SBD)　were　reseached.　Different　structures　of　AlGaN/GaN　SBD　based　on　sapphire　substrate　and　silicon　substrate　were　fabricated.　It　was　experimentally　shown　that　forward　conduction　characteristics　of　the　device　could　be　effectively　improved　by　appropriately　changing　the　Schottky-ohmic　electrode　layout,　or　applying　a　small　bias　voltage　on　the　conductive　substrate　appropriately.　The　fabricated　AlGaN/GaN　SBD　devices　based　on　Al2O3　substrate,　with　Schottky　electrode　radius　of　120　μm　and　Schottky-ohmic　electrode　spacing　of　25　μm,　and　being　achieved　the　forward　current　of　0.05　A@2　V(Ron=9.13　mΩ·cm2),　and　the　reverse　saturation　leakage　current　of　10-6　A.　In　the　test　of　the　fabricated　AlGaN/GaN　SBD　devices　based　on　silicon　substrate,　it　was　found　that　the　forward　conduction　characteristics　could　be　improved　by　applying　the　substrate　bias.　©,　2015,　Editorial　Office　of　«Res.　Prog.　SSE».　All　right　reserved.