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学者姓名：王晓蕾
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Abstract ：
Realizing magnetic skyrmions in two-dimensional (2D) van der Waals (vdW) ferromagnets offers unparalleled prospects for future spintronic applications. The room-temperature ferromagnet Fe(3)GaTe(2 )provides an ideal platform for tailoring these magnetic solitons. Here, skyrmions of distinct topological charges are artificially introduced and engineered by using magnetic force microscopy (MFM). The skyrmion lattice is realized by a specific field-cooling process and can be further erased and painted via delicate manipulation of the tip stray field. The skyrmion lattice with opposite topological charges (S = +/- 1) can be tailored at the target regions to form topological skyrmion junctions (TSJs) with specific configurations. The delicate interplay of TSJs and spin-polarized device current were finally investigated via the in situ transport measurements, alongside the topological stability of TSJs. Our results demonstrate that Fe(3)GaTe(2 )not only serves as a potential building block for skyrmion-based spintronic devices, but also presents prospects for Fe3GaTe2 -based heterostructures with the engineered topological spin textures.
Keyword ：
topologicalskyrmion junctions topologicalskyrmion junctions skyrmion skyrmion vander Waals ferromagnets vander Waals ferromagnets magnetic force microscopy magnetic force microscopy topology-engineering topology-engineering
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| GB/T 7714 | Mi, Shuo , Guo, Jianfeng , Hu, Guojing et al. Real-Space Topology-Engineering of Skyrmionic Spin Textures in a van der Waals Ferromagnet Fe3GaTe2 [J]. | NANO LETTERS , 2024 , 24 (41) : 13094-13102 . |
| MLA | Mi, Shuo et al. "Real-Space Topology-Engineering of Skyrmionic Spin Textures in a van der Waals Ferromagnet Fe3GaTe2" . | NANO LETTERS 24 . 41 (2024) : 13094-13102 . |
| APA | Mi, Shuo , Guo, Jianfeng , Hu, Guojing , Wang, Guangcheng , Li, Songyang , Gong, Zizhao et al. Real-Space Topology-Engineering of Skyrmionic Spin Textures in a van der Waals Ferromagnet Fe3GaTe2 . | NANO LETTERS , 2024 , 24 (41) , 13094-13102 . |
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Abstract ：
Due to its "ferroionic" nature, CuInP2S6 combines switchable ferroelectric polarization with highly mobile Cu ions, allowing for multiple resistance states. Its conductive mechanism involves ferroelectric switching, ion migration, and corresponding intercoupling, which are highly sensitive to external electric field. Distinguishing the dominant contribution of either ferroelectric switching or ion migration to dynamic conductivity remains a challenge and the conductive mechanism is not clear yet. Here, based on polarization switching analyses and first-principles calculations, this work demonstrates that the Cu ion migration pathways enable the formation of a quadruple-well state, determining the conductive mechanism. Accordingly, it favors the manipulation of Cu ion transport in the intralayer and interlayer in a controlled manner, and makes a transition from ferroelectric-dominated to ion-migration-dominated conductivity, by tailoring the electric fields. This work deepens the understanding of ion migration dynamics and conductive switching in ferroionic systems, which is critical for the advancement of memristor-based neuromorphic computing.
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| GB/T 7714 | Jiang, Xingan , Zhang, Xiangping , Deng, Zunyi et al. Dual-role ion dynamics in ferroionic CuInP2S6: revealing the transition from ferroelectric to ionic switching mechanisms [J]. | NATURE COMMUNICATIONS , 2024 , 15 (1) . |
| MLA | Jiang, Xingan et al. "Dual-role ion dynamics in ferroionic CuInP2S6: revealing the transition from ferroelectric to ionic switching mechanisms" . | NATURE COMMUNICATIONS 15 . 1 (2024) . |
| APA | Jiang, Xingan , Zhang, Xiangping , Deng, Zunyi , Deng, Jianming , Wang, Xiaolei , Wang, Xueyun et al. Dual-role ion dynamics in ferroionic CuInP2S6: revealing the transition from ferroelectric to ionic switching mechanisms . | NATURE COMMUNICATIONS , 2024 , 15 (1) . |
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Abstract ：
Neuromorphic computing can simulate brain function and is a pivotal element in next-generation computing, providing a potential solution to the limitations brought by the von Neumann bottleneck. Optoelectronic synaptic devices are highly promising tools for simulating biomimetic nervous systems. In this study, we developed an optoelectronic neuromorphic device with a transistor structure constructed using ferroelectric CuInP2S6. Essential synaptic behaviors in this device are observed in response to light and electrical stimuli. The optoferroelectric coupling is revealed, and the highly tunable gate modulation of the charge carrier is realized in a single device. On this basis, the light adaptation of the biological eyes and smarter Pavlovian dogs was implemented successfully and enhanced by ferroelectric polarization. The gate voltage application promotes the migration of additional Cu+ ions in the in-plane direction, thus enhancing the synaptic performance of electrical stimulation. Meanwhile, the processing ability of convolutional kernel noise images in ferroelectric devices has been achieved. Our results offer the important observation and application of ferroelectric polarization-enhanced synaptic properties of a transistor structure and have great potential in promoting the development of two-dimensional van der Waals materials and devices.
Keyword ：
neuromorphic computing neuromorphic computing optoelectronicsynaptic device optoelectronicsynaptic device CuInP2S6 CuInP2S6 ferroelectric polarization ferroelectric polarization synaptic plasticity synaptic plasticity gate modulation gate modulation
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| GB/T 7714 | Shang, Zixuan , Liu, Lingchen , Wang, Guangcheng et al. Ferroelectric Polarization Enhanced Optoelectronic Synaptic Response of a CuInP2S6 Transistor Structure [J]. | ACS NANO , 2024 , 18 (44) : 30530-30539 . |
| MLA | Shang, Zixuan et al. "Ferroelectric Polarization Enhanced Optoelectronic Synaptic Response of a CuInP2S6 Transistor Structure" . | ACS NANO 18 . 44 (2024) : 30530-30539 . |
| APA | Shang, Zixuan , Liu, Lingchen , Wang, Guangcheng , Xu, Hao , Cui, Yuanyuan , Deng, Jianming et al. Ferroelectric Polarization Enhanced Optoelectronic Synaptic Response of a CuInP2S6 Transistor Structure . | ACS NANO , 2024 , 18 (44) , 30530-30539 . |
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Abstract ：
By substituting the oxygen evolution reaction (OER) with the anodic urea oxidation reaction (UOR), it not only reduces energy consumption for green hydrogen generation but also allows purification of urea-rich wastewater. Spin engineering of the d orbital and oxygen-containing adsorbates has been recognized as an effective pathway for enhancing the performance of electrocatalysts. In this work, we report the fabrication of a bifunctional electrocatalyst composed of amorphous RuO2-coated NiO ultrathin nanosheets (a-RuO2/NiO) with abundant amorphous/crystalline interfaces for hydrogen evolution reaction (HER) and UOR. Impressively, only 1.372 V of voltage is required to attain a current density of 10 mA cm(-2) over a urea electrolyzer. The increased oxygen vacancies in a-RuO2/NiO by incorporation of amorphous RuO2 enhance the total magnetization and entail numerous spin-polarized electrons during the reaction, which speeds up the UOR reaction kinetics. The density functional theory study reveals that the amorphous/crystalline interfaces promote charge-carrier transfer, and the tailored d-band center endows the optimized adsorption of oxygen-generated intermediates. This kind of oxygen vacancy induced spin-polarized electrons toward boosting HER and UOR kinetics and provides a reliable reference for exploration of advanced electrocatalysts.
Keyword ：
spin-polarized electrons spin-polarized electrons ureaoxidation reaction ureaoxidation reaction electrocatalysis electrocatalysis hydrogenevolution reaction hydrogenevolution reaction oxygen vacancy oxygen vacancy
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| GB/T 7714 | Li, Linfeng , Zhang, Xia , Humayun, Muhammad et al. Manipulation of Electron Spins with Oxygen Vacancy on Amorphous/Crystalline Composite-Type Catalyst [J]. | ACS NANO , 2023 , 18 (1) : 1214-1225 . |
| MLA | Li, Linfeng et al. "Manipulation of Electron Spins with Oxygen Vacancy on Amorphous/Crystalline Composite-Type Catalyst" . | ACS NANO 18 . 1 (2023) : 1214-1225 . |
| APA | Li, Linfeng , Zhang, Xia , Humayun, Muhammad , Xu, Xuefei , Shang, Zixuan , Li, Zhishan et al. Manipulation of Electron Spins with Oxygen Vacancy on Amorphous/Crystalline Composite-Type Catalyst . | ACS NANO , 2023 , 18 (1) , 1214-1225 . |
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Abstract ：
本发明公开了非共线反铁磁与铁磁两相共存Mn3Ge薄膜及其制备方法与应用。本发明两相共存Mn3Ge薄膜包括非共线反铁磁Mn3Ge六角相与铁磁Mn3Ge四方相两相共存。本发明两相共存Mn3Ge薄膜的制备方法及图案化的两相共存Mn3Ge霍尔bar的制备方法，包括如下步骤：在衬底上采用磁控溅射方法通过调节生长温度生长，得到两相共存Mn3Ge薄膜；对两相共存Mn3Ge薄膜进行光刻胶匀胶、曝光、显影、刻蚀、去胶，即得到图案化的两相共存Mn3Ge霍尔bar。本发明通过调节生长温度实现了非公线反铁磁与铁磁两相共存Mn3Ge薄膜的可控生长与反常霍尔效应的调控，从而获得了具有大反常霍尔效应和抗磁干扰性能优异的自旋存储材料，能够大大拓展Mn3Ge薄膜在自旋存储领域的应用。
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| GB/T 7714 | 王晓蕾 , 崔帅楠 , 杨倩倩 et al. 非共线反铁磁与铁磁两相共存Mn3Ge薄膜及其制备方法与应用 : CN202211316081.7[P]. | 2022-10-26 . |
| MLA | 王晓蕾 et al. "非共线反铁磁与铁磁两相共存Mn3Ge薄膜及其制备方法与应用" : CN202211316081.7. | 2022-10-26 . |
| APA | 王晓蕾 , 崔帅楠 , 杨倩倩 , 赵金良 . 非共线反铁磁与铁磁两相共存Mn3Ge薄膜及其制备方法与应用 : CN202211316081.7. | 2022-10-26 . |
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Abstract ：
本发明公开了一种自旋轨道矩磁阻式随机存储器及其制备方法与应用。本发明自旋轨道矩磁阻式随机存储器，包括：衬底和在衬底上依次层叠的非共线反铁磁层和磁阻隧道结；其中，磁阻隧道结包括由下至上依次层叠的遂穿层和铁磁性层。本发明制备方法中，采用磁控溅射方法依次形成非共线反铁磁层的材料层、磁阻隧道结的各材料层，对各材料层采用光刻技术和电子束曝光技术进行图案化，形成非共线反铁磁层以及磁阻隧道结，即得到自旋轨道矩磁阻式随机存储器。本发明当电流通入具有应力梯度的非共线反铁磁层中，将产生自旋轨道耦合，从而改变非共线反铁磁层的的磁矩方向，实现隧道结的无外场写入功能。
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| GB/T 7714 | 王晓蕾 , 崔帅楠 , 杨倩倩 et al. 一种自旋轨道矩磁阻式随机存储器及其制备方法与应用 : CN202211316068.1[P]. | 2022-10-26 . |
| MLA | 王晓蕾 et al. "一种自旋轨道矩磁阻式随机存储器及其制备方法与应用" : CN202211316068.1. | 2022-10-26 . |
| APA | 王晓蕾 , 崔帅楠 , 杨倩倩 , 尚紫璇 . 一种自旋轨道矩磁阻式随机存储器及其制备方法与应用 : CN202211316068.1. | 2022-10-26 . |
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Abstract ：
Neuromorphic computing and artificial neural networks have been developed in recent years. The oxygen vacancies in the oxide compounds have similar biological dynamics to Ca2+in brain, showing obvious advantages of compatibility with high-density cross-arrays, and are expected to achieve synaptic devices that mimic organisms. In this work, we carried out a comparative study to reveal the crucial roles played by oxygen vacancies and interface roughness, based on the non-volatile ZnO memristor. The studied system for resistive switching consists of undoped ZnO film-device sandwiched between a top and a bottom Pt electrodes, allowing the current to flow uniformly perpendicular to the film. The distribution of oxygen vacancies in the sample could be modulated by applying current. After an irreversible forming step, the I-V curve becomes hysteretic, while a threshold current produces an obvious change in the resistance. We observed different electrical rectification behaviors by using different oxygen pressures and changing the roughness of bottom Pt/ZnO interface during growth. Our investigations on the modulation of resistive switching in oxide devices are very important for the development of neural networks based on the non-volatile memory.
Keyword ：
Synaptic devices Synaptic devices ZnO memristor ZnO memristor Oxygen vacancies Oxygen vacancies Rectification behaviors Rectification behaviors Interface roughness Interface roughness Resistive switching Resistive switching
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| GB/T 7714 | Xu, Jiao , Shang, Zixuan , Hou, Zhipeng et al. Exploring the crucial influence on the electrical rectification of ZnO films [J]. | SURFACES AND INTERFACES , 2022 , 31 . |
| MLA | Xu, Jiao et al. "Exploring the crucial influence on the electrical rectification of ZnO films" . | SURFACES AND INTERFACES 31 (2022) . |
| APA | Xu, Jiao , Shang, Zixuan , Hou, Zhipeng , Wang, Xiaolei . Exploring the crucial influence on the electrical rectification of ZnO films . | SURFACES AND INTERFACES , 2022 , 31 . |
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Abstract ：
Achieving highly efficient spin injection has been a challenging problem for a long time in spin logic devices. The chiral-induced spin selectivity (CISS) effect could induce spin polarization of electron transmission by chiral structure, providing a promising solution to resolve the above bottleneck. In this work, the significant CISS effect by self-assembled chiral organic molecules with helical structure was achieved on the copper (Cu) substrate covered with gold (Au) layer. We find that the spin polarization induced by the chiral molecules is more than 80%. Serving as an ultra efficient spin filter, the chiral organic molecules is demonstrated to be an effective way to generate pure spin currents and achieve highly efficient spin injection without ferromagnetic electrodes or external magnetic field. Based on these properties, a CISS based reconfigurable logic device is proposed. Due to the high spin injection efficiency, this CISS based device can realize 6 different logic operations with low energy consumption (1.2 pJ) and high speed (3.6 ns).
Keyword ：
self-assembled monolayer self-assembled monolayer Chiral organic molecules Chiral organic molecules Atomic measurements Atomic measurements Voltage measurement Voltage measurement spin injection efficiency spin injection efficiency Superconducting magnets Superconducting magnets Magnetic moments Magnetic moments chiral-induced spin selectivity chiral-induced spin selectivity Pollution measurement Pollution measurement Voltage control Voltage control reconfigurable logic device reconfigurable logic device Switches Switches
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| GB/T 7714 | Yang, Qianqian , Zhang, Zhizhong , Jiang, Xing'an et al. Realization of High Spin Injection Through Chiral Molecules and Its Application in Logic Device [J]. | IEEE ELECTRON DEVICE LETTERS , 2022 , 43 (11) : 1862-1865 . |
| MLA | Yang, Qianqian et al. "Realization of High Spin Injection Through Chiral Molecules and Its Application in Logic Device" . | IEEE ELECTRON DEVICE LETTERS 43 . 11 (2022) : 1862-1865 . |
| APA | Yang, Qianqian , Zhang, Zhizhong , Jiang, Xing'an , Wang, Xiaolei , Wang, Xueyun , Shang, Zixuan et al. Realization of High Spin Injection Through Chiral Molecules and Its Application in Logic Device . | IEEE ELECTRON DEVICE LETTERS , 2022 , 43 (11) , 1862-1865 . |
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Abstract ：
氢气作为一种清洁无污染的可再生能源,可以有效地解决全球能源危机和环境污染问题.低能耗水裂解制氢是公认的未来清洁制氢的有效途径之一.水裂解反应分为阳极上发生的析氧反应(OER)和阴极上发生的析氢反应,由于阳极半反应涉及四电子过程,反应动力学缓慢,进而导致整个水分解产氢效率低下,成为规模化水裂解制氢应用的瓶颈.贵金属Ir基和Ru基催化剂具有较好的OER催化性能,但其价格高昂和低储量极大地限制了其大规模应用.因此,设计出性能优良的非贵金属OER催化剂,对于促进电催化水裂解制氢领域的发展具有重要意义.自旋调控可以调节d-轨道电子与含氧物种之间的自旋占据态,进而改变含氧物种的吸附能,提升催化反应动力学.然而,自旋调控如何提升电催化水氧化及其内部的关联性鲜有报道.本文报道了一种(Co,Ni)Se2/C@FeOOH笼状纳米结构的自旋调控工程以提升其析氧反应活性.以金属有机框架材料ZIF-67为前驱体,采用离子交换方法和化学气相沉积法合成了(Co,Ni)Se2/C中空笼状纳米结构,接着通过化学水浴沉积法用FeOOH进行修饰,进一步提高了电催化反应动力学.磁化测试结果表明,(Co,Ni)Se2/C@FeOOH样品的极化自旋数(μb=6.966 μb/f.u)高于(Co,Ni)Se2/C样品的极化自旋数(μb=6.398μb/f.u),从而有利于含氧中间体的吸附和脱附,这与表面价带谱的结果一致.与(Co,Ni)Se2/C相比,(Co,Ni)Se2/C@FeOOH样品具有更强的铁磁性,电磁感应促进了磁性粒子最外层电子的自旋.电子自旋的增加有利于(Co,Ni)Se2/C@FeOOH样品最外层电子能级的跃迁,在3d-轨道上产生更多的空电子轨道和未成对电子,有利于电子转移和氧吸附.Ni,Co和Fe之间的π电子在界面处的局域化重组再分配优化了对含氧物种的吸附与脱附自由能,提升了OER催化性能.此外,所设计的中空笼状纳米结构和杂原子掺杂碳基体对提高OER活性也有重要作用.因此,在1.0 mol/L KOH碱性溶液中,(Co,Ni)Se2/C@FeOOH催化剂展现出较好的析氧反应性能,在10 mA cm-2电流下的过电位为241 mV,塔菲尔斜率为44 mV dec-1,明显优于原先的(Co,Ni)Se2/C催化剂.本文将为高效OER电催化剂的设计提供一种新的思路和方法.
Keyword ：
羟基氧化铁 羟基氧化铁 析氧反应 析氧反应 d-轨道电子 d-轨道电子 中空笼状纳米结构 中空笼状纳米结构 自旋工程 自旋工程
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| GB/T 7714 | 谷雨 , 王晓蕾 , Muhammad Humayun et al. (Co,Ni) Se2/C@FeOOH中空笼状纳米结构的自旋调控加速水氧化催化研究 [J]. | 催化学报 , 2022 , 43 (3) : 839-850 . |
| MLA | 谷雨 et al. "(Co,Ni) Se2/C@FeOOH中空笼状纳米结构的自旋调控加速水氧化催化研究" . | 催化学报 43 . 3 (2022) : 839-850 . |
| APA | 谷雨 , 王晓蕾 , Muhammad Humayun , 李林峰 , 孙华传 , 许雪飞 et al. (Co,Ni) Se2/C@FeOOH中空笼状纳米结构的自旋调控加速水氧化催化研究 . | 催化学报 , 2022 , 43 (3) , 839-850 . |
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Abstract ：
The metal-insulator transition (MIT) is normally assisted by certain external power input, such as temperature, pressure, strain, or doping. However, these may increase the disorder of the crystal or cause other effects, which makes device fabrication complicated and/or hinders large-scale application. Here, we adopt a new approach to obtain robust modulation of physical properties in magnetic semiconductor (Ga,Mn)As by surface molecular modification. We have probed both sides of the MIT with n-and p-type molecular doping. Density functional theory calculations are carried out to determine the stable absorption configuration and charge transfer mechanism of electron acceptor and donor molecules on the semiconductor surface. Both experimental and theoretical results confirm a remarkable modulation in carrier concentrations without introducing impurities or defects. This work points out the possibility of effectively tuning physical properties of solid-state materials by functional molecules, which is clean, flexible, nondestructive, and easily achieved.
Keyword ：
metal-insulator transition metal-insulator transition modulation of electronic states modulation of electronic states molecular absorption molecular absorption carrier concentration carrier concentration charge transfer mechanism charge transfer mechanism
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| GB/T 7714 | Wang, Xiaolei , Zhang, Chen , Wang, Hailong et al. Exploring the Metal-Insulator Transition in (Ga,Mn)As by Molecular Absorption [J]. | NANO LETTERS , 2022 , 22 (22) : 9190-9197 . |
| MLA | Wang, Xiaolei et al. "Exploring the Metal-Insulator Transition in (Ga,Mn)As by Molecular Absorption" . | NANO LETTERS 22 . 22 (2022) : 9190-9197 . |
| APA | Wang, Xiaolei , Zhang, Chen , Wang, Hailong , Yuan, Ye , Shang, Zixuan , Tan, Bi et al. Exploring the Metal-Insulator Transition in (Ga,Mn)As by Molecular Absorption . | NANO LETTERS , 2022 , 22 (22) , 9190-9197 . |
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