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学者姓名：蒋毅坚
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Abstract ：
ZnO是第三代半导体的代表之一，可作为紫外光致发光与多共振模式激光的载体，尤其以光学气化过饱和析出法（OVSP）制备的ZnO微米晶近年来在光催化、高效多彩光源、高效电致发光等方面显示出重要优势，但其制备成本较高、生产效率低下，阻碍了其大规模器件化的发展。针对上述问题，基于有限元分析的结果，设计并搭建了一套工作波长在1 080nm，功率18%(@2500W）激光加热的微米晶生长装置。以ZnO为原料验证了所研制装置的可行性与实用性。结果表明，该装置制备产物与OVSP法制备产物在形貌、结构、发光性能上非常接近，生产效率得到极大提高（～500%）。利用研制的生长装置，成功制备出了具有完整六边形截面形貌...
Keyword ：
拉曼光谱 拉曼光谱 激光材料加工 激光材料加工 光致发光光谱 光致发光光谱 ZnO微米晶 ZnO微米晶
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| GB/T 7714 | 廖逸民 , 闫胤洲 , 王强 et al. ZnO微米晶的激光制备装置及发光性能研究 [J]. | 光谱学与光谱分析 , 2022 , 42 (10) : 3000-3005 . |
| MLA | 廖逸民 et al. "ZnO微米晶的激光制备装置及发光性能研究" . | 光谱学与光谱分析 42 . 10 (2022) : 3000-3005 . |
| APA | 廖逸民 , 闫胤洲 , 王强 , 杨立学 , 潘永漫 , 邢承 et al. ZnO微米晶的激光制备装置及发光性能研究 . | 光谱学与光谱分析 , 2022 , 42 (10) , 3000-3005 . |
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Abstract ：
The effect of KrF excimer laser irradiation on the optical and electrical properties of epitaxial wafers with a p-GaN surface were investigated at different laser energy densities and pulse numbers. The laser-irradiated samples were annealed in oxygen. The laser irradiation-induced changes in optical and electrical properties of GaN epitaxial wafers were examined using PL, I-V, XPS, SIMS, and Hall effect measurements. Experimental results show that under an appropriate laser-irradiated condition, optical and electrical properties of the samples were improved to different degrees. The samples which were annealed after laser irradiation have better electrical properties such as the hole concentration and sheet resistance than those without annealing. We hypothesize that the pulsed KrF excimer laser irradiation dissociates the Mg-H complexes and annealing treatment allows the hydrogen to diffuse out more completely under the oxygen atmosphere at a proper temperature, by which the crystalline symmetry of GaN is improved. Under appropriate laser conditions and O-2-activated annealing, the light output of the laser-irradiated GaN-based LED sample is about 1.44 times that of a conventional LED at 20 mA. It is found that the wall-plug efficiency is 10% higher at 20 mA and the reverse leakage current is 80% lower at 5 V.
Keyword ：
electrical property electrical property optical property optical property GaN epitaxial wafers GaN epitaxial wafers excimer laser irradiation excimer laser irradiation GaN-based LED GaN-based LED
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| GB/T 7714 | Jiang, Yijian , Tan, Haoqi , Zhao, Yan . Improving Optical and Electrical Properties of GaN Epitaxial Wafers and Enhancing Luminescent Properties of GaN-Based Light-Emitting-Diode with Excimer Laser Irradiation [J]. | SYMMETRY-BASEL , 2021 , 13 (10) . |
| MLA | Jiang, Yijian et al. "Improving Optical and Electrical Properties of GaN Epitaxial Wafers and Enhancing Luminescent Properties of GaN-Based Light-Emitting-Diode with Excimer Laser Irradiation" . | SYMMETRY-BASEL 13 . 10 (2021) . |
| APA | Jiang, Yijian , Tan, Haoqi , Zhao, Yan . Improving Optical and Electrical Properties of GaN Epitaxial Wafers and Enhancing Luminescent Properties of GaN-Based Light-Emitting-Diode with Excimer Laser Irradiation . | SYMMETRY-BASEL , 2021 , 13 (10) . |
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Abstract ：
Here we report a novel ZnO microtubular homojunction photodiode (PD) fabricated by optical vapor supersaturated precipitation (OVSP) and sputtering methods. The acceptor-rich ZnO (A-ZnO) microtube grown by OVSP possesses a great UV-visible rejection ratio of similar to 3.77 and a high external quantum yield of 1.4 x 10(3)%. The formed A-ZnO/n-ZnO homojunction UV-PD realizes an ultrafast photoresponse down to 6 ms (three orders of magnitude faster) and boosts the sensitivity by 2.6-folds with respect to the bare A-ZnO microtube. It is beneficial for weak-signal UV detection down to the threshold of 0.4 mW/cm(2) under random excitation conditions, by which the detectivity up to 6.67 x 10(12) cmHz(1/2)/W is achieved. The ZnO microtubular homojunction paves a new way for design of high-performance wide-bandgap semiconductor UV-PDs, promoting their practical applications in future. (C) 2021 Elsevier B.V. All rights reserved.
Keyword ：
ZnO microtube ZnO microtube UV photodiode UV photodiode Ultrafast response Ultrafast response Wide-bandgap semiconductor Wide-bandgap semiconductor Homojunction Homojunction
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| GB/T 7714 | Wang, Qiang , Zou, Anshan , Yang, Lixue et al. Wide-bandgap semiconductor microtubular homojunction photodiode for high-performance UV detection [J]. | JOURNAL OF ALLOYS AND COMPOUNDS , 2021 , 887 . |
| MLA | Wang, Qiang et al. "Wide-bandgap semiconductor microtubular homojunction photodiode for high-performance UV detection" . | JOURNAL OF ALLOYS AND COMPOUNDS 887 (2021) . |
| APA | Wang, Qiang , Zou, Anshan , Yang, Lixue , Liu, Beiyun , Zhang, Yulin , Chen, Fei et al. Wide-bandgap semiconductor microtubular homojunction photodiode for high-performance UV detection . | JOURNAL OF ALLOYS AND COMPOUNDS , 2021 , 887 . |
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Abstract ：
钽酸镁(Mg_4Ta_2O_9)晶体的衰减时间快于CdWO_4晶体,光产额及能量分辨率高于CdWO_4晶体,低余辉特性和CdWO_4类似,在0.01%/3 ms左右,又由于Mg_4Ta_2O_9晶体材料无毒性元素,使其成为具有替代含有毒Cd元素的CdWO_4晶体,应用于集装箱安检领域的最佳候选材料之一。本文综述了Mg_4Ta_2O_9晶体的结构特性、晶体生长、闪烁性能及掺杂改性等方面的研究进展,发现通过掺杂Zn或Nb能显著提高其光产额。
Keyword ：
闪烁晶体 闪烁晶体 光学浮区法 光学浮区法 钽酸镁晶体 钽酸镁晶体 掺杂 掺杂 微下拉法 微下拉法 Mg_4Ta_2O_9 Mg_4Ta_2O_9
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| GB/T 7714 | 马云峰 , 徐家跃 , 蒋毅坚 et al. 面向集装箱安检应用的Mg_4Ta_2O_9闪烁晶体及其掺杂改性 [J]. | 人工晶体学报 , 2021 , 50 (10) : 1870-1878 . |
| MLA | 马云峰 et al. "面向集装箱安检应用的Mg_4Ta_2O_9闪烁晶体及其掺杂改性" . | 人工晶体学报 50 . 10 (2021) : 1870-1878 . |
| APA | 马云峰 , 徐家跃 , 蒋毅坚 , BOURRET-COURCHESNEEdith . 面向集装箱安检应用的Mg_4Ta_2O_9闪烁晶体及其掺杂改性 . | 人工晶体学报 , 2021 , 50 (10) , 1870-1878 . |
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Abstract ：
Here, we fabricated In2O3(ZnO)(m) (IZO) superlattice microplates with hexagon morphologies by the substrate-free optical vapor supersaturated precipitation. The IZO microplates possessed a superlattice structure with a large m number, i.e., m = 23, consisting of layered alternating stacks of octahedral InO2- as inversion boundaries and layered InZnmOm+1+ as a zig-zag modulated pattern. The Raman peak at 613 cm(-1) confirmed the superlattice of the IZO microplates. The broad asymmetric excitonic photoluminescence (PL) emission with the photon energy of 3.236 eV indicated the heavy doping of indium in the IZO, resulting a redshift of similar to 32 meV from the near-band-edge emission. The unusual negative thermal quenching of PL intensity was also observed. Moreover, the anisotropic electrical properties of the IZO superlattice microplates were manifested, for the first time, where the in-plane conductivity was two orders of magnitude higher than out-plane one. The present work provided new insight into the free-standing IZO superlattice microdevices for future optoelectronic applications.
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| GB/T 7714 | Liao, Yimin , Yan, Yinzhou , Yang, Lixue et al. Free-standing In2O3(ZnO)(m) superlattice microplates grown by optical vapor supersaturated precipitation [J]. | JOURNAL OF MATERIALS SCIENCE , 2021 , 56 (24) : 13723-13735 . |
| MLA | Liao, Yimin et al. "Free-standing In2O3(ZnO)(m) superlattice microplates grown by optical vapor supersaturated precipitation" . | JOURNAL OF MATERIALS SCIENCE 56 . 24 (2021) : 13723-13735 . |
| APA | Liao, Yimin , Yan, Yinzhou , Yang, Lixue , Pan, Yongman , Lu, Yue , Chen, Fei et al. Free-standing In2O3(ZnO)(m) superlattice microplates grown by optical vapor supersaturated precipitation . | JOURNAL OF MATERIALS SCIENCE , 2021 , 56 (24) , 13723-13735 . |
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Abstract ：
The roll-off of quantum yield is a major challenge facing light-emitting diodes due to the inevitable predominant non-radiative recombination with temperature elevation. Here we report highly-efficient intrinsic electroluminescence (EL) from a biased highly-compensated ZnO:Ga (HC-GZO) microrod with a metal-semiconductor-metal (MSM) structure at high temperatures. The origin of the EL emission is the current-induced Joule heating activation of electric-thermal tunneling electrons and the following spontaneous radiation from multiple donor-acceptor-pair (DAP) recombination. The reduced oxygen vacancy (V-O) concentration via Ga doping promotes the electron-phonon coupling to lower the temperature threshold down to similar to 650 K, facilitating the stability and durability of MSM-EL devices. Meanwhile, an extra channel of radiative recombination is established by introducing Ga donor dopants, expanding the luminescence color space from orange (0.496, 0.445) to red (0.529, 0.408) by varying the V-O concentration in HC-GZO microrods. The present work motivates research on the mechanism and architectural design for novel electric-thermal tunneling induced efficient radiative emission devices at high temperatures using bandgap-engineered semiconductors.
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| GB/T 7714 | Yan, Yinzhou , Xing, Cheng , Liu, Wei et al. Current-induced thermal tunneling electroluminescence via multiple donor-acceptor-pair recombination [J]. | JOURNAL OF MATERIALS CHEMISTRY C , 2021 , 9 (4) : 1174-1182 . |
| MLA | Yan, Yinzhou et al. "Current-induced thermal tunneling electroluminescence via multiple donor-acceptor-pair recombination" . | JOURNAL OF MATERIALS CHEMISTRY C 9 . 4 (2021) : 1174-1182 . |
| APA | Yan, Yinzhou , Xing, Cheng , Liu, Wei , Wang, Qiang , Xu, Chunxiang , Jiang, Yijian . Current-induced thermal tunneling electroluminescence via multiple donor-acceptor-pair recombination . | JOURNAL OF MATERIALS CHEMISTRY C , 2021 , 9 (4) , 1174-1182 . |
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Abstract ：
热效应是影响半导体器件发光性能的最关键因素之一.本文针对光学气化过饱和析出法制备的本征富受主型ZnO微米管,系统研究了其光致发光的温度调控机制.研究表明,所制备ZnO微米管具有规则的六边形截面形貌,长度达5 mm、直径达100μm,室温下的光学带隙约为3.30 eV;随着环境温度的提高,其光致发光强度呈现"热淬灭-负热淬灭-热淬灭"的反常变化.在80—200 K温区内的热淬灭行为与浅施主的退/电离、自由激子热离化以及中性受主束缚激子的转变有关;在200—240 K温区内发生的负热淬灭行为与导带底以下488 me V处深能级陷阱上电子的热激发有关;在240—470 K温区内发生的热淬灭行为则与导...
Keyword ：
光致发光 光致发光 负热淬灭 负热淬灭 氧化锌 氧化锌 热淬灭 热淬灭
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| GB/T 7714 | 王强 , 杨立学 , 刘北云 et al. 本征富受主型ZnO微米管光致发光的温度调控机制 [J]. | 物理学报 , 2020 , 69 (19) : 305-311 . |
| MLA | 王强 et al. "本征富受主型ZnO微米管光致发光的温度调控机制" . | 物理学报 69 . 19 (2020) : 305-311 . |
| APA | 王强 , 杨立学 , 刘北云 , 闫胤洲 , 陈飞 , 蒋毅坚 . 本征富受主型ZnO微米管光致发光的温度调控机制 . | 物理学报 , 2020 , 69 (19) , 305-311 . |
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Abstract ：
<正>介电微球光学微腔在全光谱范围内具有低损耗光子纳米射流、光学回音壁模式以及定向天线等介观光场调控效应,在纳米粒子探测、荧光增强、增强拉曼光谱、光学超分辨成像等领域得到了广泛关注。本报告详细介绍了介电微球腔阵列对荧光及拉曼两种光散射过程的调控作用机制。通过在刚性衬底上构建介电微球腔阵列,分别实现了高质量、宽禁带半导体薄膜紫外荧光增强及固态材料的增强拉曼光谱,全面阐述了微球腔聚焦效应、抗反射限光效应、光学回音壁谐振、定向天线效应以及衬底
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| GB/T 7714 | 闫胤洲 , 蒋毅坚 . 介电微球阵列结构光辐射/散射调控:从刚性衬底到柔性穿戴 [J]. | 量子电子学报 , 2020 , 37 (01) : 123-124 . |
| MLA | 闫胤洲 et al. "介电微球阵列结构光辐射/散射调控:从刚性衬底到柔性穿戴" . | 量子电子学报 37 . 01 (2020) : 123-124 . |
| APA | 闫胤洲 , 蒋毅坚 . 介电微球阵列结构光辐射/散射调控:从刚性衬底到柔性穿戴 . | 量子电子学报 , 2020 , 37 (01) , 123-124 . |
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Abstract ：
Here we demonstrate a novel and robust mechanism, termed as "current-induced Joule heating activated thermal tunneling excitation," to achieve electroluminescence (EL) by the hot electron-hole-pair recombination in a single highly compensated semiconductor microrod. The radiative luminescence is electrically excited under ambient conditions. The current-induced Joule heating reduces the thermal tunneling excitation threshold of voltage down to 8 V and increases the EL efficiency similar to 4.4-fold at 723 K. We interpret this novel phenomenon by a thermal tunneling excitation model corrected by electric-induced Joule heating effect. The mechanism is confirmed via theoretical calculation and experimental demonstration, for the first time. The color-tunable EL emission is also achieved by regulation of donor concentration. This work opens up new opportunities for design of novel multi-color light-emitting devices by homogeneous defect-engineered semiconductors in future.
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| GB/T 7714 | Xing, Cheng , Liu, Wei , Wang, Qiang et al. Current-Induced Thermal Tunneling Electroluminescence in a Single Highly Compensated Semiconductor Microrod [J]. | ISCIENCE , 2020 , 23 (6) . |
| MLA | Xing, Cheng et al. "Current-Induced Thermal Tunneling Electroluminescence in a Single Highly Compensated Semiconductor Microrod" . | ISCIENCE 23 . 6 (2020) . |
| APA | Xing, Cheng , Liu, Wei , Wang, Qiang , Xu, Chunxiang , Yan, Yinzhou , Jiang, Yijian . Current-Induced Thermal Tunneling Electroluminescence in a Single Highly Compensated Semiconductor Microrod . | ISCIENCE , 2020 , 23 (6) . |
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Abstract ：
Three ortho-, meta-, and para-linked polymers derived from 9,9-dioctylfluorene (FO) and dimethoxyl-biphenyl (DMBP) were designed and synthesized via catalyst-transfer Suzuki coupling polymerization with palladium(0) catalyst as initiator. Compared to PFO, the conjugated polymers of PFO-o-DMBP, PFO-m-DMBP, and PFO-p-DMBP displayed a significantly blued-shifted absorption and emission spectra with the change of the connecting site from ortho-, meta- to para-position, and the varying degrees were ascribed to the different types of steric hindrance of ortho-, meta-, and para-linkage, which partly hinder the intermonomer rotation of the polymer backbone, giving rise to molecular configuration from linear, zigzag to intertwined structure, and resulting in shortened conjugation length. The optical bandgap calculated from the onset of absorption spectra of the three polymers in solid film are all wider than that of the PFO, indicating that the incorporating of dimethoxyl-biphenyl increased the chain-twisting hindrance and influenced the molecular conformation of the copolymer. Systematical investigation of electrochemical and photophysical properties of the conjugated polymers suggests that the incorporation of dimethoxyl-biphenyl via ortho-, meta-, and para-linkage is an efficient and economic way to modify the properties of polyfluorenes. © 2020 Society of Photo-Optical Instrumentation Engineers (SPIE).
Keyword ：
Conjugated polymers Conjugated polymers Catalysts Catalysts Emission spectroscopy Emission spectroscopy
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| GB/T 7714 | Cao, Jinzhu , Jiang, Yijian , Ji, Lingfei et al. Strategy to modify the properties of polyfluorene by incorporating dimethoxyl-biphenyl at different type of connection site [J]. | Journal of Photonics for Energy , 2020 , 10 (3) . |
| MLA | Cao, Jinzhu et al. "Strategy to modify the properties of polyfluorene by incorporating dimethoxyl-biphenyl at different type of connection site" . | Journal of Photonics for Energy 10 . 3 (2020) . |
| APA | Cao, Jinzhu , Jiang, Yijian , Ji, Lingfei , Huang, Wei . Strategy to modify the properties of polyfluorene by incorporating dimethoxyl-biphenyl at different type of connection site . | Journal of Photonics for Energy , 2020 , 10 (3) . |
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