Query:
学者姓名:闫胤洲
Refining:
Year
Type
Indexed by
Source
Complex
Co-Author
Language
Clean All
Abstract :
本发明公开了一种产生涡旋激光的柔性可转移涡旋激光器件及制备方法,通过利用双光束干涉曝光技术得到二维光栅周期结构,选择聚合物材料MDMO‑PPV和甲苯溶液的混合溶液作为增益材料,制备得到涡旋激光器件。进而将制备好的器件放置于显影剂中浸泡,去除玻璃基底上的全部光刻胶。从而得到柔性可转移的涡旋激光器件,促进了涡旋光束在生活生产中的更广泛的应用。
Cite:
Copy from the list or Export to your reference management。
GB/T 7714 | 翟天瑞 , 刘渝 , 徐智洋 et al. 一种产生涡旋激光的柔性可转移涡旋激光器件及制备方法 : CN202411243580.7[P]. | 2024-09-05 . |
MLA | 翟天瑞 et al. "一种产生涡旋激光的柔性可转移涡旋激光器件及制备方法" : CN202411243580.7. | 2024-09-05 . |
APA | 翟天瑞 , 刘渝 , 徐智洋 , 闫胤洲 , 高晓梅 , 常斯琦 . 一种产生涡旋激光的柔性可转移涡旋激光器件及制备方法 : CN202411243580.7. | 2024-09-05 . |
Export to | NoteExpress RIS BibTex |
Abstract :
一种制备β‑Ga2O3微米带的方法涉及半导体材料和光学技术领域。其以Ga2O3粉末和石墨粉为原料;球磨烘干、200目过筛;装入长条橡胶气球,压实封闭、抽真空,等静压下制成粗细、密度均匀的圆柱形料棒;将圆柱形料棒放入光学浮区炉中,设置浮区炉卤钨灯输出功率为720W/h,通入氧气,光照一定时间,经过光学气化过饱和析出的生长过程,制备β‑Ga2O3微米带,该微米带尺寸较大,形貌完整,可有效构建光电器件。加快了氧化镓的一维微纳结构生长的时间,节约了能源,降低了生产成本。
Cite:
Copy from the list or Export to your reference management。
GB/T 7714 | 蒋毅坚 , 潘永漫 , 闫胤洲 et al. 一种制备β-Ga2O3微米带的方法 : CN202210859639.X[P]. | 2022-07-21 . |
MLA | 蒋毅坚 et al. "一种制备β-Ga2O3微米带的方法" : CN202210859639.X. | 2022-07-21 . |
APA | 蒋毅坚 , 潘永漫 , 闫胤洲 , 王强 . 一种制备β-Ga2O3微米带的方法 : CN202210859639.X. | 2022-07-21 . |
Export to | NoteExpress RIS BibTex |
Abstract :
本发明公开了一种应用于提高谷偏振度的光学介电微球阵列/单层二硒化钨复合结构的制备方法,将光学介电微球分散液滴在单层二硒化钨上,通过自组装的方法得到光学介电微球阵列/单层二硒化钨复合结构。本发明得到的光学介电微球阵列/单层二硒化钨复合结构具有优异的谷偏振光电性能,为谷电子器件的设计制造应用提供了一种新的方案。
Cite:
Copy from the list or Export to your reference management。
GB/T 7714 | 闫胤洲 , 张晓华 , 赵晨 et al. 一种应用于提高谷偏振度的光学介电微球阵列/单层二硒化钨复合结构的制备方法 : CN202211628609.4[P]. | 2022-12-18 . |
MLA | 闫胤洲 et al. "一种应用于提高谷偏振度的光学介电微球阵列/单层二硒化钨复合结构的制备方法" : CN202211628609.4. | 2022-12-18 . |
APA | 闫胤洲 , 张晓华 , 赵晨 , 蒋毅坚 . 一种应用于提高谷偏振度的光学介电微球阵列/单层二硒化钨复合结构的制备方法 : CN202211628609.4. | 2022-12-18 . |
Export to | NoteExpress RIS BibTex |
Abstract :
本发明公开了一种级联微球透镜增强拉曼探针的制备方法。通过光纤拉锥以及激光辐照熔融烧制出一级光学微球透镜,然后该透镜通过沾取很薄的紫外胶黏连了一个直径等于其聚焦光斑的二级光学微球透镜,最后利用紫外光固化得到了级联微球透镜增强拉曼探针。本制造方法获得的级联微球透镜增强拉曼探针具有优异性能的拉曼增强效应,在低成本、高灵敏度拉曼光谱痕量检测场景中具有广阔的应用前景。
Cite:
Copy from the list or Export to your reference management。
GB/T 7714 | 闫胤洲 , 米彦霖 , 蒋毅坚 . 一种级联微球透镜增强拉曼探针的制备方法 : CN202210477557.9[P]. | 2022-05-05 . |
MLA | 闫胤洲 et al. "一种级联微球透镜增强拉曼探针的制备方法" : CN202210477557.9. | 2022-05-05 . |
APA | 闫胤洲 , 米彦霖 , 蒋毅坚 . 一种级联微球透镜增强拉曼探针的制备方法 : CN202210477557.9. | 2022-05-05 . |
Export to | NoteExpress RIS BibTex |
Abstract :
The roll-off of quantum yield is a major challenge facing light-emitting diodes due to the inevitable predominant non-radiative recombination with temperature elevation. Here we report highly-efficient intrinsic electroluminescence (EL) from a biased highly-compensated ZnO:Ga (HC-GZO) microrod with a metal-semiconductor-metal (MSM) structure at high temperatures. The origin of the EL emission is the current-induced Joule heating activation of electric-thermal tunneling electrons and the following spontaneous radiation from multiple donor-acceptor-pair (DAP) recombination. The reduced oxygen vacancy (V-O) concentration via Ga doping promotes the electron-phonon coupling to lower the temperature threshold down to similar to 650 K, facilitating the stability and durability of MSM-EL devices. Meanwhile, an extra channel of radiative recombination is established by introducing Ga donor dopants, expanding the luminescence color space from orange (0.496, 0.445) to red (0.529, 0.408) by varying the V-O concentration in HC-GZO microrods. The present work motivates research on the mechanism and architectural design for novel electric-thermal tunneling induced efficient radiative emission devices at high temperatures using bandgap-engineered semiconductors.
Cite:
Copy from the list or Export to your reference management。
GB/T 7714 | Yan, Yinzhou , Xing, Cheng , Liu, Wei et al. Current-induced thermal tunneling electroluminescence via multiple donor-acceptor-pair recombination [J]. | JOURNAL OF MATERIALS CHEMISTRY C , 2021 , 9 (4) : 1174-1182 . |
MLA | Yan, Yinzhou et al. "Current-induced thermal tunneling electroluminescence via multiple donor-acceptor-pair recombination" . | JOURNAL OF MATERIALS CHEMISTRY C 9 . 4 (2021) : 1174-1182 . |
APA | Yan, Yinzhou , Xing, Cheng , Liu, Wei , Wang, Qiang , Xu, Chunxiang , Jiang, Yijian . Current-induced thermal tunneling electroluminescence via multiple donor-acceptor-pair recombination . | JOURNAL OF MATERIALS CHEMISTRY C , 2021 , 9 (4) , 1174-1182 . |
Export to | NoteExpress RIS BibTex |
Abstract :
Here, we fabricated In2O3(ZnO)(m) (IZO) superlattice microplates with hexagon morphologies by the substrate-free optical vapor supersaturated precipitation. The IZO microplates possessed a superlattice structure with a large m number, i.e., m = 23, consisting of layered alternating stacks of octahedral InO2- as inversion boundaries and layered InZnmOm+1+ as a zig-zag modulated pattern. The Raman peak at 613 cm(-1) confirmed the superlattice of the IZO microplates. The broad asymmetric excitonic photoluminescence (PL) emission with the photon energy of 3.236 eV indicated the heavy doping of indium in the IZO, resulting a redshift of similar to 32 meV from the near-band-edge emission. The unusual negative thermal quenching of PL intensity was also observed. Moreover, the anisotropic electrical properties of the IZO superlattice microplates were manifested, for the first time, where the in-plane conductivity was two orders of magnitude higher than out-plane one. The present work provided new insight into the free-standing IZO superlattice microdevices for future optoelectronic applications.
Cite:
Copy from the list or Export to your reference management。
GB/T 7714 | Liao, Yimin , Yan, Yinzhou , Yang, Lixue et al. Free-standing In2O3(ZnO)(m) superlattice microplates grown by optical vapor supersaturated precipitation [J]. | JOURNAL OF MATERIALS SCIENCE , 2021 , 56 (24) : 13723-13735 . |
MLA | Liao, Yimin et al. "Free-standing In2O3(ZnO)(m) superlattice microplates grown by optical vapor supersaturated precipitation" . | JOURNAL OF MATERIALS SCIENCE 56 . 24 (2021) : 13723-13735 . |
APA | Liao, Yimin , Yan, Yinzhou , Yang, Lixue , Pan, Yongman , Lu, Yue , Chen, Fei et al. Free-standing In2O3(ZnO)(m) superlattice microplates grown by optical vapor supersaturated precipitation . | JOURNAL OF MATERIALS SCIENCE , 2021 , 56 (24) , 13723-13735 . |
Export to | NoteExpress RIS BibTex |
Abstract :
本发明公开了一种应用于防伪标识的介电微球图案化阵列上转换发光柔性薄膜的制造方法,首先在低浓度上转换柔性薄膜上得到一个单层的图案化介电微球阵列,再将高浓度上转换纳米离子溶液绘制其表面得到复合结构,实现了依赖激发功率的上转换发光防伪标识的应用。现有的防伪标识的制备方法存在包括制备流程复杂、成本高、不足以保护商品的真实性等缺陷。本制造方法中介电微球图案化阵列上转换发光柔性薄膜其杰出的柔韧性与光学性能,为可穿戴式近红外防伪标识的应用提供了一种替代方案。
Cite:
Copy from the list or Export to your reference management。
GB/T 7714 | 闫胤洲 , 贺靖 . 一种应用于防伪标识的介电微球图案化阵列上转换发光柔性薄膜的制造方法 : CN202111193843.4[P]. | 2021-10-13 . |
MLA | 闫胤洲 et al. "一种应用于防伪标识的介电微球图案化阵列上转换发光柔性薄膜的制造方法" : CN202111193843.4. | 2021-10-13 . |
APA | 闫胤洲 , 贺靖 . 一种应用于防伪标识的介电微球图案化阵列上转换发光柔性薄膜的制造方法 : CN202111193843.4. | 2021-10-13 . |
Export to | NoteExpress RIS BibTex |
Abstract :
本发明公开了一种银纳米线柔性导电透明薄膜的制备方法,将银纳米线涂覆在柔性薄膜上,采用激光辐照纳米焊接工艺对所制备的银纳米线网格进行处理,使得银纳米线节点处熔化焊接,在不影响薄膜透过率的情况下降低纳米线间节点的连接电阻,从而获得具有优异性能的柔性导电透明薄膜,在生物兼容光电子器件、可穿戴设备等领域有巨大的应用前景。
Cite:
Copy from the list or Export to your reference management。
GB/T 7714 | 闫胤洲 , 王涛 , 王越 . 一种银纳米线柔性导电透明薄膜的制备方法 : CN202110914072.7[P]. | 2021-08-10 . |
MLA | 闫胤洲 et al. "一种银纳米线柔性导电透明薄膜的制备方法" : CN202110914072.7. | 2021-08-10 . |
APA | 闫胤洲 , 王涛 , 王越 . 一种银纳米线柔性导电透明薄膜的制备方法 : CN202110914072.7. | 2021-08-10 . |
Export to | NoteExpress RIS BibTex |
Abstract :
Here we report a novel ZnO microtubular homojunction photodiode (PD) fabricated by optical vapor supersaturated precipitation (OVSP) and sputtering methods. The acceptor-rich ZnO (A-ZnO) microtube grown by OVSP possesses a great UV-visible rejection ratio of similar to 3.77 and a high external quantum yield of 1.4 x 10(3)%. The formed A-ZnO/n-ZnO homojunction UV-PD realizes an ultrafast photoresponse down to 6 ms (three orders of magnitude faster) and boosts the sensitivity by 2.6-folds with respect to the bare A-ZnO microtube. It is beneficial for weak-signal UV detection down to the threshold of 0.4 mW/cm(2) under random excitation conditions, by which the detectivity up to 6.67 x 10(12) cmHz(1/2)/W is achieved. The ZnO microtubular homojunction paves a new way for design of high-performance wide-bandgap semiconductor UV-PDs, promoting their practical applications in future. (C) 2021 Elsevier B.V. All rights reserved.
Keyword :
ZnO microtube ZnO microtube UV photodiode UV photodiode Ultrafast response Ultrafast response Wide-bandgap semiconductor Wide-bandgap semiconductor Homojunction Homojunction
Cite:
Copy from the list or Export to your reference management。
GB/T 7714 | Wang, Qiang , Zou, Anshan , Yang, Lixue et al. Wide-bandgap semiconductor microtubular homojunction photodiode for high-performance UV detection [J]. | JOURNAL OF ALLOYS AND COMPOUNDS , 2021 , 887 . |
MLA | Wang, Qiang et al. "Wide-bandgap semiconductor microtubular homojunction photodiode for high-performance UV detection" . | JOURNAL OF ALLOYS AND COMPOUNDS 887 (2021) . |
APA | Wang, Qiang , Zou, Anshan , Yang, Lixue , Liu, Beiyun , Zhang, Yulin , Chen, Fei et al. Wide-bandgap semiconductor microtubular homojunction photodiode for high-performance UV detection . | JOURNAL OF ALLOYS AND COMPOUNDS , 2021 , 887 . |
Export to | NoteExpress RIS BibTex |
Abstract :
Silver nanowires (Ag-NWs), which possess a high aspect ratio with superior electrical conductivity and transmittance, show great promise as flexible transparent electrodes (FTEs) for future electronics. Unfortunately, the fabrication of Ag-NW conductive networks with low conductivity and high transmittance is a major challenge due to the ohmic contact resistance between Ag-NWs. Here we report a facile method of fabricating high-performance Ag-NW electrodes on flexible substrates. A 532 nm nanosecond pulsed laser is employed to nano-weld the Ag-NW junctions through the energy confinement caused by localized surface plasmon resonance, reducing the sheet resistance and connecting the junctions with the substrate. Additionally, the thermal effect of the pulsed laser on organic substrates can be ignored due to the low energy input and high transparency of the substrate. The fabricated FTEs demonstrate a high transmittance (up to 85.9%) in the visible band, a low sheet resistance of 11.3 omega/sq, high flexibility and strong durability. The applications of FTEs to 2D materials and LEDs are also explored. The present work points toward a promising new method for fabricating high-performance FTEs for future wearable electronic and optoelectronic devices.
Keyword :
laser nano-welding laser nano-welding organic electronics organic electronics flexible transparent electrodes flexible transparent electrodes silver nanowires silver nanowires
Cite:
Copy from the list or Export to your reference management。
GB/T 7714 | Wang, Tao , Yan, Yinzhou , Zhu, Liye et al. High-Performance Flexible Transparent Electrodes Fabricated via Laser Nano-Welding of Silver Nanowires [J]. | CRYSTALS , 2021 , 11 (8) . |
MLA | Wang, Tao et al. "High-Performance Flexible Transparent Electrodes Fabricated via Laser Nano-Welding of Silver Nanowires" . | CRYSTALS 11 . 8 (2021) . |
APA | Wang, Tao , Yan, Yinzhou , Zhu, Liye , Li, Qian , He, Jing , Zhang, Xiaoxia et al. High-Performance Flexible Transparent Electrodes Fabricated via Laser Nano-Welding of Silver Nanowires . | CRYSTALS , 2021 , 11 (8) . |
Export to | NoteExpress RIS BibTex |
Export
Results: |
Selected to |
Format: |