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学者姓名:冯士维
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Abstract :
In this article, a trap characterization system based on the transient drain voltage was constructed to achieve the complete measurement and analysis of traps in GaN high-electron-mobility transistors (HEMTs). Through the appropriate design of the measurement circuit and acquisition system, the transient drain voltage variations caused by trapping behaviors in the GaN HEMTs can be obtained. A time constant extraction method based on the Bayesian deconvolution function was used to optimize the trap extraction accuracy, and the trap properties, including time constant, absolute amplitudes, and energy levels, can be comprehensively characterized. In combination with the above trap features, the response of trapping behaviors to various bias voltages was obtained to analyze the trap positions. With respect to the GaN HEMTs with different processes and fabrications, extensive measurements of energy levels were performed on four kinds of samples to confirm the validity of the proposed characterization system, and four devices of each kind were used to verify the repeatability of experimental results. It indicated that the constructed instrument and measurement methods can realize the accurate and nondestructive characterization of traps. The method used in this study can be potentially beneficial to better understand the reliability issues and optimize the performance of devices.
Keyword :
GaN high-electron-mobility transistors (HEMTs) GaN high-electron-mobility transistors (HEMTs) Energy level Energy level trapping effect trapping effect reliability reliability transient drain voltage transient drain voltage
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GB/T 7714 | Pan, Shijie , Feng, Shiwei , Li, Xuan et al. A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage [J]. | IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT , 2024 , 73 . |
MLA | Pan, Shijie et al. "A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage" . | IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT 73 (2024) . |
APA | Pan, Shijie , Feng, Shiwei , Li, Xuan , Bai, Kun , Lu, Xiaozhuang , Zheng, Xiang et al. A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage . | IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT , 2024 , 73 . |
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Abstract :
The interfacial thermal resistance between two solid materials is usually obvious in thermal management technology, but there is still no way to eliminate it nor uniform measurement standard. When taking thermal measurements because the surface roughness of instrument probe and device package directly affects the interface morphology, the change of total thermal resistance caused by the thermal contact resistance (TCR) fluctuations disturbs the accuracy of internal thermal analysis of device. We prepared samples with different surface roughness and performed thermal measurements on them, compared with test under vacuum environment and the condition filled with thermal interface materials, respectively. We found the heat-transfer mechanism of interface. More importantly, it is shown that in the interval of surface roughness Ra < 6.4, the TCR shows good consistency when filled with thermal interface materials. This result will help to improve the convenience of measurement for the accuracy of thermal measurement technology.
Keyword :
surface roughness surface roughness Thermal contact resistance Thermal contact resistance solid-solid interface solid-solid interface microelectronic device microelectronic device thermal management thermal management
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GB/T 7714 | Chen, Yu-Zheng , Feng, Shi-Wei , Zhang, Ya-Min et al. Effect of interface morphology on thermal contact resistance in thermal management of electronic devices [J]. | INTERNATIONAL JOURNAL OF MODERN PHYSICS B , 2022 , 36 (17) . |
MLA | Chen, Yu-Zheng et al. "Effect of interface morphology on thermal contact resistance in thermal management of electronic devices" . | INTERNATIONAL JOURNAL OF MODERN PHYSICS B 36 . 17 (2022) . |
APA | Chen, Yu-Zheng , Feng, Shi-Wei , Zhang, Ya-Min , He, Xin , Bai, Kun , Li, Xuan . Effect of interface morphology on thermal contact resistance in thermal management of electronic devices . | INTERNATIONAL JOURNAL OF MODERN PHYSICS B , 2022 , 36 (17) . |
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Abstract :
This paper presents a detailed investigation of trapping effect in AlGaN/GaN high-electron-mobility transistors based on the pulsed current-voltage characterization, drain voltage transient (DVT) measurement, and capacitance deep-level transient spectroscopy (C-DLTS). By monitoring the DVTs at various filling voltages and temperatures, the properties of three electron traps were obtained with the DVT measurements. Specifically, the energy levels of the former two traps were determined to be 0.28 and 0.48 eV, which was confirmed by the C-DLTS measurement performed on the same device. In addition, a third temperature-independent trap located in the GaN buffer was observed only with the DVT measurement, indicating the advantage of transient curves measurement in characterizing the traps insensitive to temperature. The combined measurements demonstrate the correlation of different techniques, which allows identifying the same trap levels to investigate the physical origin of traps.
Keyword :
gallium nitride (GaN) gallium nitride (GaN) drain voltage transients (DVTs) drain voltage transients (DVTs) high-electron-mobility transistors (HEMTs) high-electron-mobility transistors (HEMTs) trap trap capacitance deep-level transient spectroscopy (C-DLTS) capacitance deep-level transient spectroscopy (C-DLTS)
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GB/T 7714 | Pan, Shijie , Feng, Shiwei , Li, Xuan et al. Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy [J]. | SEMICONDUCTOR SCIENCE AND TECHNOLOGY , 2022 , 37 (9) . |
MLA | Pan, Shijie et al. "Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy" . | SEMICONDUCTOR SCIENCE AND TECHNOLOGY 37 . 9 (2022) . |
APA | Pan, Shijie , Feng, Shiwei , Li, Xuan , Bai, Kun , Lu, Xiaozhuang , Zhang, Yamin et al. Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy . | SEMICONDUCTOR SCIENCE AND TECHNOLOGY , 2022 , 37 (9) . |
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Abstract :
The critical temperatures of semiconductor laser facet coating layers were studied via measurements from three prongs on the surface (coating exterior boundary), on the facet (coating interior boundary) and along the inner cavity, with temperatures measured via infrared imaging, thermoreflectance and forward-voltage methods, respectively. We subdivided the facet microstructure temperatures and demonstrated the feasibility of facet temperature measurement via thermoreflectance for the reflected light carrying the temperature information mainly comes from the coating interior boundary. Facet reflectivity transients of an AlGaInAs/AlGaAs laser diode are traced using an optical setup featuring fiber transmission and fiber detection. The highest temperature along the z-axis was measured at the facet, with a temperature rise exceeding two times that at the surface, which confirmed the significance of the subdivision, and approaching four times that in the inner cavity. Thermal transient analysis from optical and electrical methods presents similar results; steady temperature measurements as a function of injection current indicate light absorption's contribution to facet heating.
Keyword :
Thermal characteristic analysis Thermal characteristic analysis Highest temperature determination Highest temperature determination Facet coating layers Facet coating layers Nondestructive measurement Nondestructive measurement Thermoreflectance technology Thermoreflectance technology Fiber detection Fiber detection
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GB/T 7714 | Ni, Yijia , Feng, Shiwei , Lu, Xiaozhuang et al. Research on temperatures located within facet coating layers along z-axis of semiconductor lasers [J]. | OPTICS AND LASER TECHNOLOGY , 2022 , 153 . |
MLA | Ni, Yijia et al. "Research on temperatures located within facet coating layers along z-axis of semiconductor lasers" . | OPTICS AND LASER TECHNOLOGY 153 (2022) . |
APA | Ni, Yijia , Feng, Shiwei , Lu, Xiaozhuang , Bai, Kun , Zhang, Yamin , Pan, Shijie et al. Research on temperatures located within facet coating layers along z-axis of semiconductor lasers . | OPTICS AND LASER TECHNOLOGY , 2022 , 153 . |
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Abstract :
In this work, the current transient method was conducted for trap analysis in the p-GaN gate high-electron-mobility transistors (HEMTs) in the OFF-state. Based on the traditional detrapping transient measurements, the pure recovery transients can be isolated by subtracting the undetected part caused by the measurement conditions. A comparison of the measured and actual recovery transients under different drain filling voltages was presented. It suggested that this method can be effective to analyze the unregular transient curves and distinguish the charge trapping type preliminarily. In addition, three traps were identified based on the time constant spectra and the hidden absolute amplitudes of traps can be corrected using the differential amplitude spectra. The information of trap levels in the buffer layer and AlGaN barrier layer was revealed, consisting of three electron traps with energy levels of 0.313, 0.265, and 0.467 eV. The identification of the traps may provide a physical foundation for better understanding of the drain-induced trapping effect during the OFF-state in p-GaN HEMTs.
Keyword :
trapping effect trapping effect Electron traps Electron traps reliability reliability Current transient method Current transient method normally-OFF normally-OFF Behavioral sciences Behavioral sciences HEMTs HEMTs Logic gates Logic gates p-GaN gate high-electron-mobility transistors (HEMTs) p-GaN gate high-electron-mobility transistors (HEMTs) Market research Market research MODFETs MODFETs Transient analysis Transient analysis
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GB/T 7714 | Pan, Shijie , Feng, Shiwei , Li, Xuan et al. Identification of Traps in p-GaN Gate HEMTs During OFF-State Stress by Current Transient Method [J]. | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2022 , 69 (9) : 4877-4882 . |
MLA | Pan, Shijie et al. "Identification of Traps in p-GaN Gate HEMTs During OFF-State Stress by Current Transient Method" . | IEEE TRANSACTIONS ON ELECTRON DEVICES 69 . 9 (2022) : 4877-4882 . |
APA | Pan, Shijie , Feng, Shiwei , Li, Xuan , Bai, Kun , Lu, Xiaozhuang , Zhu, Jiayu et al. Identification of Traps in p-GaN Gate HEMTs During OFF-State Stress by Current Transient Method . | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2022 , 69 (9) , 4877-4882 . |
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Abstract :
In this work, we developed the voltage-transient method to characterize the properties of traps in AlGaN/GaN high-electron-mobility transistors (HEMTs) in the OFF-state. By monitoring the drain voltage transients of the HEMTs at various temperatures, three types of trapping mechanism were identified: 1) buffer charge trapping, which occurred on a timescale of approximately 1 ms; 2) charge trapping in the AlGaN layer at the gate-drain edge with the energy level (E-a) of approximately 0.54 eV; and 3) surface charge trapping with E-a of approximately 0.28 eV. In particular, we extracted accurate amplitudes for the first two trapping behaviors and studied the dependence of the trapping effect on the filling bias conditions. The results showed that the buffer charge trapping was primarily affected by the drain voltage, whereas the charge trapping on the drain side of the gate was affected by both the drain and gate voltages; these results were verified by drift-diffusion simulations. In addition, we observed the third trapping behavior, which was apparent in the measurement window beyond 308 K, thus demonstrating the advantages of our method for correctly and effectively monitoring the changes in the peaks in the time constant spectrum.
Keyword :
Charge trapping Charge trapping high-electron-mobility transistors (HEMTs) high-electron-mobility transistors (HEMTs) differential amplitude spectrum (DAS) differential amplitude spectrum (DAS) voltage transient voltage transient GaN GaN
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GB/T 7714 | Pan, Shijie , Feng, Shiwei , Li, Xuan et al. Identifying the Properties of Traps in GaN High-Electron-Mobility Transistors via Amplitude Analysis Based on the Voltage-Transient Method [J]. | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2021 , 68 (11) : 5541-5546 . |
MLA | Pan, Shijie et al. "Identifying the Properties of Traps in GaN High-Electron-Mobility Transistors via Amplitude Analysis Based on the Voltage-Transient Method" . | IEEE TRANSACTIONS ON ELECTRON DEVICES 68 . 11 (2021) : 5541-5546 . |
APA | Pan, Shijie , Feng, Shiwei , Li, Xuan , Zheng, Xiang , Lu, Xiaozhuang , He, Xin et al. Identifying the Properties of Traps in GaN High-Electron-Mobility Transistors via Amplitude Analysis Based on the Voltage-Transient Method . | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2021 , 68 (11) , 5541-5546 . |
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Abstract :
The temperature and thermal resistance of Ga2O3 Schottky barrier diodes were investigated using electrical methods with temperature-sensitive electrical parameters and the structure function method. The analysis was based on the voltage of the Schottky junction as a temperature-sensitive parameter so as to measure the junction temperature of Ga2O3 Schottky barrier diodes. The junction-case thermal resistance of the Ga2O3 Schottky barrier diodes was accurately extracted by the transient dual interface test method to be 39.04 degrees C W-1, which increased slightly with the increase of power current. In addition, the temperature extracted with the electrical method was compared with the result of infrared measurements, which indicated that the temperature extracted with the infrared was significantly higher than the result of the electrical method. This difference can be explained in that the temperature extracted by the electrical method was the temperature of the active region of the device, whereas the result of infrared presented the maximum temperature of the device. Furthermore, the low thermal conductivity of Ga2O3 resulted in temperature inhomogeneity on the device surface and further increased the temperature difference. This study provides a convenient and non-destructive method for rapid measurement of the thermal characteristics of the Ga2O3 Schottky barrier diodes, and enables rapid evaluation of the whole thermal system.
Keyword :
thermal resistance thermal resistance Ga2O3 Schottky barrier diode (SBD) Ga2O3 Schottky barrier diode (SBD) temperature measurement temperature measurement temperature-sensitive electrical parameter (TSEP) temperature-sensitive electrical parameter (TSEP)
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GB/T 7714 | Li, Xuan , Feng, Shiwei , Feng, Zhihong et al. Characterization of thermal-resistance in Ga2O3 Schottky barrier diodes with temperature-sensitive electrical parameters [J]. | SEMICONDUCTOR SCIENCE AND TECHNOLOGY , 2021 , 36 (11) . |
MLA | Li, Xuan et al. "Characterization of thermal-resistance in Ga2O3 Schottky barrier diodes with temperature-sensitive electrical parameters" . | SEMICONDUCTOR SCIENCE AND TECHNOLOGY 36 . 11 (2021) . |
APA | Li, Xuan , Feng, Shiwei , Feng, Zhihong , Lv, Yuanjie , Wang, Yuangang , He, Xin et al. Characterization of thermal-resistance in Ga2O3 Schottky barrier diodes with temperature-sensitive electrical parameters . | SEMICONDUCTOR SCIENCE AND TECHNOLOGY , 2021 , 36 (11) . |
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Abstract :
Silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) are susceptible to unexpected short-circuit (SC) impacts in high-voltage inverters operating in complex applications. This paper presents a research on the effect of high-side blocking and classical low-side blocking on short circuit characteristics. Simulation of the steady-state electric field, which equivalent to the states after LSB and HSB, was performed. The obvious electric field concentration appears in the source-drain pn junction of the DUT after the LSB, and is much larger in value than that appearing in the DUT after the HSB. DUTs, which failed, were decapsulated from the side of the drain to allow for an emission microscope (EMMI) investigation. In response to the results of the EMMI investigation, it was discussed that the occurrence of source leakage was caused by electric field con-centration after the DUT is blocked. The hazards of this failure and the expected further research are mentioned simply.
Keyword :
Robustness Robustness EMMI EMMI SiC power MOSFETs SiC power MOSFETs Short circuit currents Short circuit currents
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GB/T 7714 | Bai, Kun , Feng, Shiwei , Zheng, Xiang et al. Effect of high- and low-side blocking on short-circuit characteristics of SiC MOSFET [J]. | MICROELECTRONICS RELIABILITY , 2021 , 123 . |
MLA | Bai, Kun et al. "Effect of high- and low-side blocking on short-circuit characteristics of SiC MOSFET" . | MICROELECTRONICS RELIABILITY 123 (2021) . |
APA | Bai, Kun , Feng, Shiwei , Zheng, Xiang , He, Xin , Pan, Shijie , Li, Xuan . Effect of high- and low-side blocking on short-circuit characteristics of SiC MOSFET . | MICROELECTRONICS RELIABILITY , 2021 , 123 . |
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Abstract :
In this study, we investigated the effects of temperature and bias voltage on the electron transport properties of AlGaN/GaN high-electron-mobility transistors in the saturation region using a turn-on delay time. A sine wave signal was used to accurately acquire the delay time between the gate-source voltage and drain-source current signal of the device at temperatures ranging from 30 degrees C to 180 degrees C under operating conditions. With this method, we illustrated a non-monotonic relationship between the temperature and the delay time, which was closely related to the effect of temperature on saturation drift velocity and charge trapping. In addition, it suggested that the delay time increased with increasing drain-source voltage, which was ascribed to the effect of charge trapping. The validity of the proposed results has been thoroughly verified with similar phenomena on two samples. The results may be useful for further study on the electron transport of GaN HEMTs under high temperature and voltages.
Keyword :
trapping effect trapping effect high-electron-mobility transistor (HEMT) high-electron-mobility transistor (HEMT) turn-on delay turn-on delay gallium nitride (GaN) gallium nitride (GaN) Electron transport Electron transport
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GB/T 7714 | Pan, Shijie , Feng, Shiwei , Zheng, Xiang et al. Effects of Temperature and Bias Voltage on Electron Transport Properties in GaN High-Electron-Mobility Transistors [J]. | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY , 2021 , 21 (4) : 494-499 . |
MLA | Pan, Shijie et al. "Effects of Temperature and Bias Voltage on Electron Transport Properties in GaN High-Electron-Mobility Transistors" . | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 21 . 4 (2021) : 494-499 . |
APA | Pan, Shijie , Feng, Shiwei , Zheng, Xiang , He, Xin , Li, Xuan , Bai, Kun . Effects of Temperature and Bias Voltage on Electron Transport Properties in GaN High-Electron-Mobility Transistors . | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY , 2021 , 21 (4) , 494-499 . |
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Abstract :
The effects of high-energy (1 MeV) electron irradiation on the electrical and trapping properties of AlGaN/GaN high-electron-mobility transistors (HEMTs) are investigated systematically. When the irradiation fluence increases from 5 x 10(12)/cm(2) to 1 x 10(14)/cm(2), the drain-source current also increases and the threshold voltage shifts toward the negative direction. A Raman spectroscopy study shows that electron irradiation induces strain relaxation in the HEMT, which results in an improvement in the device's electrical characteristics. In particular, three traps in the device are identified using the voltage-transient method and the trapping effects in the HEMT are investigated after the final irradiation. When compared with the transient voltages during the pristine stage, the absolute amplitudes of the three traps in the device decrease after irradiation, which indicates a reduction in the density of the traps. Furthermore, it is proposed that the time constants of the three traps increase while the energy levels remain unchanged, which is ascribed to the strain relaxation and the structural ordering of the defects after electron irradiation. The observed changes in the trapping behaviors are consistent with the improvement in the electrical properties of the device and the shift in the Raman spectra.
Keyword :
high-electron-mobility transistors (HEMTs) high-electron-mobility transistors (HEMTs) Electron irradiation Electron irradiation Raman spectra Raman spectra voltage-transientmethod voltage-transientmethod gallium nitride (GaN) gallium nitride (GaN)
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GB/T 7714 | Pan, Shijie , Feng, Shiwei , Li, Xuan et al. Analysis of the Effects of High-Energy Electron Irradiation of GaN High-Electron-Mobility Transistors Using the Voltage-Transient Method [J]. | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2021 , 68 (8) : 3968-3973 . |
MLA | Pan, Shijie et al. "Analysis of the Effects of High-Energy Electron Irradiation of GaN High-Electron-Mobility Transistors Using the Voltage-Transient Method" . | IEEE TRANSACTIONS ON ELECTRON DEVICES 68 . 8 (2021) : 3968-3973 . |
APA | Pan, Shijie , Feng, Shiwei , Li, Xuan , Zheng, Xiang , Lu, Xiaozhuang , Hu, Chaoxu et al. Analysis of the Effects of High-Energy Electron Irradiation of GaN High-Electron-Mobility Transistors Using the Voltage-Transient Method . | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2021 , 68 (8) , 3968-3973 . |
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