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学者姓名：冯士维
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Abstract ：
With the miniaturization of electronic devices, thermal management has become a critical challenge, especially for high-power systems where efficient heat dissipation is essential. Polycrystalline diamond films, renowned for their exceptional thermal conductivity, offer a promising solution. However, the thermal boundary resistance (TBR) at the diamond/substrate interface remains a significant bottleneck, severely impacting heat dissipation efficiency. This study presents a measurement approach tailored for quantifying TBR in thick-film diamond heterostructures, focusing on diamond-on-silicon (Diamond-on-Si) systems with a silicon nitride barrier layer. Compared to conventional methods, such as transient thermoreflectance techniques, which often exhibit limited sensitivity for thick layers, this approach demonstrates greater reliability and applicability. The findings establish a foundation for advancing strategies to reduce TBR and improve the thermal management performance of diamond films in high-power electronic applications.
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| GB/T 7714 | Lu, Xiaozhuang , Liu, Qingbin , Yu, Cui et al. Advanced thermal boundary resistance measurement techniques for thick-film diamond heterostructures [J]. | APPLIED PHYSICS LETTERS , 2025 , 126 (1) . |
| MLA | Lu, Xiaozhuang et al. "Advanced thermal boundary resistance measurement techniques for thick-film diamond heterostructures" . | APPLIED PHYSICS LETTERS 126 . 1 (2025) . |
| APA | Lu, Xiaozhuang , Liu, Qingbin , Yu, Cui , Feng, Shiwei , Feng, Zhihong , Li, Haibing et al. Advanced thermal boundary resistance measurement techniques for thick-film diamond heterostructures . | APPLIED PHYSICS LETTERS , 2025 , 126 (1) . |
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Abstract ：
Press-pack insulated gate bipolar transistor (IGBT) is widely used in transmission systems due to its high reliability and short-circuit failure modes. However, there is a lack of research on the failure mechanism of elastic press-pack IGBT. For the elastic press-pack IGBT sub-module, based on the principle of electrical measurement, this paper designs a power cycling test system for power cycling test and thermal resistance measurement. Based on the structure function method, the changes of electrical properties and thermal resistance after power cycling are studied. The reliability and failure mechanism of the elastic crimp IGBT sub-module are analyzed, and the conclusion that the gate oxide layer damage is the main failure principle is obtained. The work of this paper fills the gap in the practical application of elastic press-pack IGBT.
Keyword ：
reliability reliability system installation system installation failure analysis failure analysis Power cycling Power cycling press-pack IGBT press-pack IGBT
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| GB/T 7714 | Zhang, Boyang , Feng, Shiwei , He, Xin et al. Power Cycling and Research on Failure Mechanism of Press-Pack IGBT based on Thermal Resistance Composition Testing [J]. | 2024 4TH INTERNATIONAL CONFERENCE ON ELECTRONIC MATERIALS AND INFORMATION ENGINEERING, EMIE 2024 , 2024 : 15-18 . |
| MLA | Zhang, Boyang et al. "Power Cycling and Research on Failure Mechanism of Press-Pack IGBT based on Thermal Resistance Composition Testing" . | 2024 4TH INTERNATIONAL CONFERENCE ON ELECTRONIC MATERIALS AND INFORMATION ENGINEERING, EMIE 2024 (2024) : 15-18 . |
| APA | Zhang, Boyang , Feng, Shiwei , He, Xin , Bai, Kun , Lu, Xiaozhuang , Zhou, Yinqi . Power Cycling and Research on Failure Mechanism of Press-Pack IGBT based on Thermal Resistance Composition Testing . | 2024 4TH INTERNATIONAL CONFERENCE ON ELECTRONIC MATERIALS AND INFORMATION ENGINEERING, EMIE 2024 , 2024 , 15-18 . |
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Abstract ：
An automatic in -situ technique for thermal resistance measurement based on an electrical method is proposed in this paper. In contrast to the conventional thermal resistance measurement circuits of the electrical method, this method involves direct measurement of the thermal resistance of GaN high-electron-mobility transistor (HEMT) devices in an operating circuit by introducing a well-matched radio-frequency switching circuit into the operating circuit. The advantage of this method is that the thermal resistance can be measured periodically on the insitu device without changing the electrical characteristics of the device. Based on this result, the cooling curve of the HEMT device in the power amplifier (PA) circuit is collected and the thermal resistance characteristics of the HEMT are determined via the structure function method. The purpose of this paper is to successfully obtain the thermal resistance of in -situ devices through an automatic in -situ measurement circuit of thermal resistance, and to verify the feasibility of periodic detection of thermal resistance of in -situ devices.
Keyword ：
In -situ measurement In -situ measurement GaN HEMT GaN HEMT RF switching RF switching Thermal resistance Thermal resistance S-parameters S-parameters
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| GB/T 7714 | Yao, Zhanwu , Feng, Shiwei , Li, Xuan et al. Automatic in-situ measurement of thermal resistance for GaN HEMTs [J]. | MICROELECTRONICS JOURNAL , 2024 , 149 . |
| MLA | Yao, Zhanwu et al. "Automatic in-situ measurement of thermal resistance for GaN HEMTs" . | MICROELECTRONICS JOURNAL 149 (2024) . |
| APA | Yao, Zhanwu , Feng, Shiwei , Li, Xuan , Bai, Kun , Lu, Xiaozhuang , You, Binyu et al. Automatic in-situ measurement of thermal resistance for GaN HEMTs . | MICROELECTRONICS JOURNAL , 2024 , 149 . |
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Abstract ：
In this article, a trap characterization system based on the transient drain voltage was constructed to achieve the complete measurement and analysis of traps in GaN high-electron-mobility transistors (HEMTs). Through the appropriate design of the measurement circuit and acquisition system, the transient drain voltage variations caused by trapping behaviors in the GaN HEMTs can be obtained. A time constant extraction method based on the Bayesian deconvolution function was used to optimize the trap extraction accuracy, and the trap properties, including time constant, absolute amplitudes, and energy levels, can be comprehensively characterized. In combination with the above trap features, the response of trapping behaviors to various bias voltages was obtained to analyze the trap positions. With respect to the GaN HEMTs with different processes and fabrications, extensive measurements of energy levels were performed on four kinds of samples to confirm the validity of the proposed characterization system, and four devices of each kind were used to verify the repeatability of experimental results. It indicated that the constructed instrument and measurement methods can realize the accurate and nondestructive characterization of traps. The method used in this study can be potentially beneficial to better understand the reliability issues and optimize the performance of devices.
Keyword ：
GaN high-electron-mobility transistors (HEMTs) GaN high-electron-mobility transistors (HEMTs) Energy level Energy level trapping effect trapping effect reliability reliability transient drain voltage transient drain voltage
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| GB/T 7714 | Pan, Shijie , Feng, Shiwei , Li, Xuan et al. A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage [J]. | IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT , 2024 , 73 . |
| MLA | Pan, Shijie et al. "A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage" . | IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT 73 (2024) . |
| APA | Pan, Shijie , Feng, Shiwei , Li, Xuan , Bai, Kun , Lu, Xiaozhuang , Zheng, Xiang et al. A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage . | IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT , 2024 , 73 . |
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Abstract ：
本发明公开了一种测试功率模块内部芯片有源区温度分布均匀性的无损方法，在不同温度下测试模块温度敏感电学参数，获得模块温度敏感电学参数的校温曲线；利用芯片有源区各温度区间的温度分布规律，结合算法，建立温度分布参数(尺度参数和位置参数)和电流电压关系的四维校温曲线库；通过测试模拟实际工况下升温后模块温度敏感电学参数，与四维校温曲线库比对，实现功率模块内部芯片有源区温度均匀性的无损检测。
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| GB/T 7714 | 郭春生 , 李宇濛 , 赵迪 et al. 一种功率模块内部芯片有源区温度分布均匀性的无损测试方法 : CN202310564357.1[P]. | 2023-05-18 . |
| MLA | 郭春生 et al. "一种功率模块内部芯片有源区温度分布均匀性的无损测试方法" : CN202310564357.1. | 2023-05-18 . |
| APA | 郭春生 , 李宇濛 , 赵迪 , 李嘉芃 , 朱慧 , 张亚民 et al. 一种功率模块内部芯片有源区温度分布均匀性的无损测试方法 : CN202310564357.1. | 2023-05-18 . |
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Abstract ：
本发明公开了一种采用微秒级瞬态曲线表征GaNHEMT器件陷阱参数的方法，涉及半导体器件可靠性领域。通过电路设计实现对GaNHEMT器件在恒定电学偏置下微秒级瞬态电压曲线的采集，并通过结构函数法进一步分析处理得到相关陷阱信息。所述方法主要包括：将被测器件放置于恒温平台上，并与陷阱测试电路相连接；在陷阱填充过程中通过电路对器件施加偏置电压；在陷阱释放过程中通过快速开关将切换时间缩短至微秒级，同时采集瞬态电压曲线的变化情况并通过软件进行分析处理，得到器件内部陷阱相关信息。本发明通过电路设计将瞬态电压曲线的采集提升至微秒级，可用于不同厂商生产的GaNHEMT器件陷阱测试，具有较好的通用性。
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| GB/T 7714 | 冯士维 , 潘世杰 , 李轩 et al. 一种采用微秒级瞬态曲线表征GaNHEMT器件陷阱参数的方法 : CN202310000307.0[P]. | 2023-01-03 . |
| MLA | 冯士维 et al. "一种采用微秒级瞬态曲线表征GaNHEMT器件陷阱参数的方法" : CN202310000307.0. | 2023-01-03 . |
| APA | 冯士维 , 潘世杰 , 李轩 , 白昆 , 鲁晓庄 . 一种采用微秒级瞬态曲线表征GaNHEMT器件陷阱参数的方法 : CN202310000307.0. | 2023-01-03 . |
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Abstract ：
一种异质半导体器件陷阱参数的精确测量方法涉及半导体器件可靠性领域。传统的利用陷阱释放过程中瞬态漏源电流变化来表征陷阱参数的方法忽视了测试条件引入的陷阱填充对于瞬态电流变化的影响，这部分影响被当作陷阱释放的一部分包含在瞬态曲线中，从而导致对于陷阱填充机理及陷阱幅值的错误分析。本申请针对这一瞬态电流曲线变化的测量误差提出了一种修正方法，在传统的瞬态电流曲线测试之前设计了表征测试条件导致的瞬态电流变化步骤，利用这一表征结果对最终的瞬态曲线变化进行校正。这种方法可以很好地修正测试条件对陷阱释放过程中瞬态电流变化的影响，获取更加准确的瞬态曲线变化，从而正确评估异质半导体器件内部陷阱参数及作用机理。
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| GB/T 7714 | 冯士维 , 潘世杰 , 冯子璇 et al. 一种异质半导体器件陷阱参数的精确测量方法 : CN202310000308.5[P]. | 2023-01-03 . |
| MLA | 冯士维 et al. "一种异质半导体器件陷阱参数的精确测量方法" : CN202310000308.5. | 2023-01-03 . |
| APA | 冯士维 , 潘世杰 , 冯子璇 , 李轩 , 鲁晓庄 , 姚占武 . 一种异质半导体器件陷阱参数的精确测量方法 : CN202310000308.5. | 2023-01-03 . |
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Abstract ：
本发明提供了一种采用探针接触快速测量多路半导体器件的温度系数的方法和装置。本发明将控制模块、激励源模块、测量模块、采集模块、传输模块以及数据处理模块进行了级联调试，设计了对应测试器件的夹具，采用探针法进行测量，完成了高精度的温度系数测量系统的设计与实现。本发明提供的测量方法和装置解决了传统测量只能测量单只器件的问题，同时完成了测量系统的自动化实现，省去了复杂的人工操作，同时提高了测量精度。
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| GB/T 7714 | 冯士维 , 尤彬宇 , 姚占武 et al. 一种采用探针接触快速测量多路半导体器件的温度系数的方法和装置 : CN202310429707.3[P]. | 2023-04-20 . |
| MLA | 冯士维 et al. "一种采用探针接触快速测量多路半导体器件的温度系数的方法和装置" : CN202310429707.3. | 2023-04-20 . |
| APA | 冯士维 , 尤彬宇 , 姚占武 , 鲁晓庄 , 李轩 , 白昆 et al. 一种采用探针接触快速测量多路半导体器件的温度系数的方法和装置 : CN202310429707.3. | 2023-04-20 . |
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Abstract ：
本发明公开了一种半导体器件微区结构损伤无损表征的方法，对待测器件施加一定电学偏置条件，利用测试仪器分别采集被测器件应力作用前后漏电流随时间变化的瞬态曲线，利用贝叶斯迭代的时间常数提取方法从瞬态曲线中提取器件损伤位置的时间常数，结合峰值谱时间常数提取技术将器件损伤位置的时间常数以峰值谱的形式呈现出来，并在此基础上利用幅值谱技术进行谱值化表征，将应力作用下器件内部不可见的微区结构损伤的演化过程转变为可视化的谱线移动，实现器件微区结构损伤的精准定位、损伤程度和演化过程的谱值化量化表征。
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| GB/T 7714 | 张亚民 , 温茜 , 孟宪伟 et al. 一种半导体器件微区结构损伤无损表征的方法 : CN202310163377.8[P]. | 2023-02-24 . |
| MLA | 张亚民 et al. "一种半导体器件微区结构损伤无损表征的方法" : CN202310163377.8. | 2023-02-24 . |
| APA | 张亚民 , 温茜 , 孟宪伟 , 冯士维 , 彭飞 , 杨洁 . 一种半导体器件微区结构损伤无损表征的方法 : CN202310163377.8. | 2023-02-24 . |
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Abstract ：
一种利用幅值响应表征GaN HEMT器件陷阱位置分布的方法涉及半导体器件可靠性领域。当GaN HEMT器件处于栅源电压和漏源电压偏置下，器件内部陷阱在恒定应力作用下被电子填充。应力结束后在器件漏源两端施加恒定电流，并监测其漏源电压随时间变化情况，即可表征陷阱释放过程。通过对这一陷阱释放过程中的瞬态电压变化进行测量，在时间常数谱的基础上对陷阱相应峰值进行分析处理，即可得到器件内部陷阱的绝对幅值。器件内部不同位置的陷阱填充与电场分布相关，电场强度增大时，同一位置对应陷阱幅值随之增大。本发明通过获取陷阱在不同偏置电压下的精确幅值变化，分析不同电压下电场对于陷阱填充的影响，从而实现对于陷阱位置分布的有效表征。
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| GB/T 7714 | 冯士维 , 潘世杰 , 李轩 et al. 一种利用幅值响应表征GaN HEMT器件陷阱位置分布的方法 : CN202310000309.X[P]. | 2023-01-03 . |
| MLA | 冯士维 et al. "一种利用幅值响应表征GaN HEMT器件陷阱位置分布的方法" : CN202310000309.X. | 2023-01-03 . |
| APA | 冯士维 , 潘世杰 , 李轩 , 冯子璇 , 白昆 , 尤彬宇 . 一种利用幅值响应表征GaN HEMT器件陷阱位置分布的方法 : CN202310000309.X. | 2023-01-03 . |
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