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学者姓名：郭霞
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Abstract ：
混合结构的石墨烯/半导体光电晶体管因其超高的响应度而备受关注。然而,该类光电晶体管通过源-漏电极测试得到的比探测率(D~*)容易受到1/f噪声的限制。本文制备了混合结构的石墨烯/GaAs光电探测器,通过源-栅电极测得D~*大约为1.82×10~(11) Jones,与通过源-漏电极测量相比,D~*提高了约500倍。这可归因于界面上肖特基势垒对载流子俘获和释放过程的屏蔽作用。此外,探测器的上升时间和下降时间分别是4 ms和37 ms,响应速度相应地提高了2个数量级。该工作为制备高比探测率和高速的光电探测器提供了一种新的思路。
Keyword ：
比探测率 比探测率 响应速度 响应速度 石墨烯 石墨烯 光二极管 光二极管
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| GB/T 7714 | 田慧军 , 刘巧莉 , 岳恒 et al. 高比探测率和高速石墨烯/n-GaAs复合结构的光电探测器(英文) [J]. | 中国光学 , 2021 , 14 (01) : 206-212 . |
| MLA | 田慧军 et al. "高比探测率和高速石墨烯/n-GaAs复合结构的光电探测器(英文)" . | 中国光学 14 . 01 (2021) : 206-212 . |
| APA | 田慧军 , 刘巧莉 , 岳恒 , 胡安琪 , 郭霞 . 高比探测率和高速石墨烯/n-GaAs复合结构的光电探测器(英文) . | 中国光学 , 2021 , 14 (01) , 206-212 . |
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Abstract ：
Graphene-microfiber with the advantage of graphene material and microfiber has been hailed as a wonderful optical waveguide. In this paper, its fabrication, optical properties and applications have been presented. Here, we present our recent progress in the graphene-microfiber waveguides from photonic devices, e.g., optical polarizers and optical modulators to mode-locking in fiber laser. With the novel nanotechnology emerging, graphene-microfiber could offer new possibilities for the future optic circuits, systems and networks. © 2021, Springer Nature Singapore Pte Ltd.
Keyword ：
Optical waveguides Optical waveguides Optical properties Optical properties Light modulators Light modulators Photonic devices Photonic devices Fiber lasers Fiber lasers Laser mode locking Laser mode locking Graphene devices Graphene devices Graphene Graphene Microfibers Microfibers
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| GB/T 7714 | He, Xiaoying , Hu, Anqi , Guo, X. et al. Graphene-Microfiber and Its Application on Photonic Devices and Lasers [C] . 2021 : 27-32 . |
| MLA | He, Xiaoying et al. "Graphene-Microfiber and Its Application on Photonic Devices and Lasers" . (2021) : 27-32 . |
| APA | He, Xiaoying , Hu, Anqi , Guo, X. , Li, C. . Graphene-Microfiber and Its Application on Photonic Devices and Lasers . (2021) : 27-32 . |
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Abstract ：
Hybrid graphene/semiconductor phototransistors have attracted great attention because of their ultrahigh responsivity. However, the specific detectivity (D*) for such hybrid phototransistors obtained from source-drain electrodes is assumed to be 1/f noise. In this paper, D* of ~1.82×1011 Jones was achieved from source-gate electrodes. Compared with the same device which was measured from source-drain electrodes, D* was improved by ~500 times. This could be attributed to the carrier trapping and detrapping processes having been screened by the Schottky barrier at the interface. The rise and decay times were 4 ms and 37 ms, respectively. The temporal response speed also correspondingly improved by ~2 orders of magnitude. This work provides an alternative route toward light photodetectors with high specific detectivity and speed. Copyright ©2021 Chinese Optics. All rights reserved.
Keyword ：
Schottky barrier diodes Schottky barrier diodes Phototransistors Phototransistors Graphene Graphene Electrodes Electrodes Refractory metal compounds Refractory metal compounds
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| GB/T 7714 | Tian, Hui-Jun , Liu, Qiao-Li , Yue, Heng et al. Hybrid graphene/n-GaAs photodiodes with high specific detectivity and high speed [J]. | Chinese Optics , 2021 , 14 (1) : 206-212 . |
| MLA | Tian, Hui-Jun et al. "Hybrid graphene/n-GaAs photodiodes with high specific detectivity and high speed" . | Chinese Optics 14 . 1 (2021) : 206-212 . |
| APA | Tian, Hui-Jun , Liu, Qiao-Li , Yue, Heng , Hu, An-Qi , Guo, Xia . Hybrid graphene/n-GaAs photodiodes with high specific detectivity and high speed . | Chinese Optics , 2021 , 14 (1) , 206-212 . |
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Abstract ：
高比探测率和高速石墨烯/n-GaAs复合结构的光电探测器
Keyword ：
光二极管 光二极管 比探测率 比探测率 石墨烯 石墨烯 响应速度 响应速度
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| GB/T 7714 | 田慧军 , 刘巧莉 , 岳恒 et al. 高比探测率和高速石墨烯/n-GaAs复合结构的光电探测器 [J]. | 田慧军 , 2021 , 14 (1) : 206-212 . |
| MLA | 田慧军 et al. "高比探测率和高速石墨烯/n-GaAs复合结构的光电探测器" . | 田慧军 14 . 1 (2021) : 206-212 . |
| APA | 田慧军 , 刘巧莉 , 岳恒 , 胡安琪 , 郭霞 , 中国光学 . 高比探测率和高速石墨烯/n-GaAs复合结构的光电探测器 . | 田慧军 , 2021 , 14 (1) , 206-212 . |
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Abstract ：
Gamma-ray (gamma-ray) radiation for silicon single photon avalanche diodes (Si SPADs) is evaluated, with total dose of 100 krad(Si) and dose rate of 50 rad(Si)/s by using(60)Co as the gamma-ray radiation source. The breakdown voltage, photocurrent, and gain have no obvious change after the radiation. However, both the leakage current and dark count rate increase by about one order of magnitude above the values before the radiation. Temperature-dependent current-voltage measurement results indicate that the traps caused by radiation function as generation and recombination centers. Both leakage current and dark count rate can be almost recovered after annealing at 200 degrees C for about 2 hours, which verifies the radiation damage mechanics.
Keyword ：
silicon single photon avalanche diode (Si SPAD) silicon single photon avalanche diode (Si SPAD) radiation damage radiation damage gamma-ray radiation gamma-ray radiation
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| GB/T 7714 | Liu, Qiaoli , Zhang, Haiyan , Hao, Lingxiang et al. Total dose test with gamma-ray for silicon single photon avalanche diodes* [J]. | CHINESE PHYSICS B , 2020 , 29 (8) . |
| MLA | Liu, Qiaoli et al. "Total dose test with gamma-ray for silicon single photon avalanche diodes*" . | CHINESE PHYSICS B 29 . 8 (2020) . |
| APA | Liu, Qiaoli , Zhang, Haiyan , Hao, Lingxiang , Hu, Anqi , Wu, Guang , Guo, Xia . Total dose test with gamma-ray for silicon single photon avalanche diodes* . | CHINESE PHYSICS B , 2020 , 29 (8) . |
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Abstract ：
Photodetectors based on two-dimensional (2D)/ three-dimensional (3D) semiconductor heterojunction structures are emerging as appealing candidates for high-sensitivity applications. The performances of these hybrid photodetectors are closely correlated with their current gain mechanism. Carrier recirculation is the most commonly reported mechanism. Recently, a Fermi level alignment mechanism was proposed for 2D graphene/0-dimensional (0D) quantum dot heterostructures because of the easy Fermi level tunability of the quantum dot. In this article, an interface-induced gain mechanism using this Fermi level alignment process is proposed and identified based on a 2D graphene/3D GaAs hybrid structure with comparative measurement configurations. Because of the high surface state density of GaAs, the photo-excited holes tend to become trapped at the graphene/GaAs interface, which can easily lower the interface Fermi level and the Fermi level in graphene via an alignment process. When combined with the high carrier mobility characteristics of graphene, a maximum current gain of 2520 and responsivity of 1321 A W-1 are achieved in the devices. This study clarifies the role of the interface states in the gain characteristics of some 2D/3D hybrid devices, with results that are instructive for optimal device design.
Keyword ：
graphene graphene responsivity responsivity interface-induced gain interface-induced gain GaAs GaAs photodetectors photodetectors
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| GB/T 7714 | Tian, Huijun , Hu, Anqi , Liu, Qiaoli et al. Interface-Induced High Responsivity in Hybrid Graphene/GaAs Photodetector [J]. | ADVANCED OPTICAL MATERIALS , 2020 , 8 (8) . |
| MLA | Tian, Huijun et al. "Interface-Induced High Responsivity in Hybrid Graphene/GaAs Photodetector" . | ADVANCED OPTICAL MATERIALS 8 . 8 (2020) . |
| APA | Tian, Huijun , Hu, Anqi , Liu, Qiaoli , He, Xiaoying , Guo, Xia . Interface-Induced High Responsivity in Hybrid Graphene/GaAs Photodetector . | ADVANCED OPTICAL MATERIALS , 2020 , 8 (8) . |
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Abstract ：
Graphene-based photodetector with ultra-high responsivity is an important research field of low dimensional optoelectronics applications. A number of hybrid graphene/quantum dots photodetectors with high responsivity have been developed. In this paper, the in-situ oxidation of the copper covered by monolayer graphene was studied under the oxygen-rich condition. It is found that the oxidation process first occurs at the grain boundary of graphene and the oxide is Cu2O. The intensity ratio of 2D band and G band of graphene is similar to 3, and the defect D peak is absent, which indicates that the quality of graphene is not damaged during the oxidation process. The hybrid transfer-free graphene/Cu2O photodetector is fabricated by in-situ copper oxidation. Under 450 nm laser illumination, the responsivity of the photodetector is 3.8x10(6) A/W at 0.2 V. The gain is up to 1.1x10(7), which is due to the modulation of Fermi level of graphene by Cu2O quantum dots. The photodetector exhibits the specific detectivity of 3.6x10(11) Jones. This work opens a feasible pathway to develop transfer-free graphene/semiconductor photodetector with high responsivity.
Keyword ：
Graphene Graphene In-situ In-situ Cuprous oxide Cuprous oxide Photodetector Photodetector Quantum dots Quantum dots
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| GB/T 7714 | Tian, Huijun , Liu, Qiaoli , Hu, Anqi et al. Research on in-situ oxidation of the copper covered by graphene [C] . 2020 . |
| MLA | Tian, Huijun et al. "Research on in-situ oxidation of the copper covered by graphene" . (2020) . |
| APA | Tian, Huijun , Liu, Qiaoli , Hu, Anqi , Guo, Xia . Research on in-situ oxidation of the copper covered by graphene . (2020) . |
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Abstract ：
The 4.2% mismatch at the Si/Ge interface has a significant impact on Si/Ge photodetectors. However, few researchers have attempted to determine the major noise source or study the effects of the Si/Ge interface on the dark current, the responsivity and the 3-dB bandwidth of these devices. In this letter, we found that the dark current was dominated by generation-recombination processes that were enhanced by trap-assisted-tunneling around the interface below 220 K, with a characteristic tunneling energy of E-00 = 14 meV corresponding to an effective mass of m* = 18m(0). This behavior can be explained by the rise in the heavy-hole band caused by the compressive strain on the Ge layer. When the temperature increased above 240 K, Shockley-Read-Hall recombination was clearly observed and believed to be dominant. The responsivity, the collection efficiency and the absorption efficiency were all extracted at 850 nm, 1310 nm, and 1550 nm. The absorption coefficient around the interface was found to be lower than that of the bulk material. In addition, comparison of the measured 3-dB frequency (similar to 20.6 GHz @ -0.5 V) with the theoretical value (similar to 29.37 GHz) indicated that defects have little effect on the bandwidth at high frequencies.
Keyword ：
germanium germanium Photodetector Photodetector
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| GB/T 7714 | Li, Chong , Li, Ben , Qin, Shihong et al. Effects of Interface States on Ge-On-SOI Photodiodes [J]. | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY , 2019 , 7 (1) : 7-12 . |
| MLA | Li, Chong et al. "Effects of Interface States on Ge-On-SOI Photodiodes" . | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 7 . 1 (2019) : 7-12 . |
| APA | Li, Chong , Li, Ben , Qin, Shihong , Su, Jiale , He, Xiaoying , Guo, Xia . Effects of Interface States on Ge-On-SOI Photodiodes . | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY , 2019 , 7 (1) , 7-12 . |
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Abstract ：
To solve the problem of anti-seismic capacity decline of aging mortise and tenon joints, four types of flat steel reinforcement devices were designed and manufactured based on the reversibility, nondestructive and intention of preserving the semi-rigid characteristics of mortise tenon joints. The devices were distinguished from each other in whether with a moveable slot and the reinforcement was fixed to the column or not. The flat steel reinforcement devices were applied to half tenon joints through tenon joints and dovetail joints. 12 tenons and mortise joints were designed and manufactured according to the Fabrication Methods of Song Dynasty, including 4 half tenon joints, 4 through tenon joints and 4 dovetail joints. The scale ratio was 1:3.52. All the joints were slightly damaged by cyclic loaded before the low-cycle reversed loading experiment was carried out. The seismic performance parameters of joints such as reinforcement load-displacement hysteresis loops, skeleton curves, degradation of rigidity and energy dissipation capacity were compared and studied before and after reinforcement. The results show that all the hysteresis loops of joints have obvious pinch effect which indicates slippage occurred between the mortise tenon joints and the semi-rigid characteristics of joints were reserved after reinforcement.The energy dissipation capacity of the joints grows in a parabolic way with the increase of displacement loads. The rigidity, peak load and energy dissipation capacity of the joints were improved after reinforcement. The reinforcement effect of the strengthening devices which was fixed to the column was better than others. The results show the seismic capacity of mortise tenon joints can be effectively improved by strengthening the connection between reinforcement and wood components. Finally, suggestions on how to further enhance the reinforcement effect of the four types strengthening devices were put forward. © 2019, Editorial Department of Journal of Beijing University of Technology. All right reserved.
Keyword ：
Dovetail joints; Flat steel reinforcement devices; Half tenon joints; Seismic behavior; Throughtenon joints Dovetail joints; Flat steel reinforcement devices; Half tenon joints; Seismic behavior; Throughtenon joints
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| GB/T 7714 | Huan, J. , Ma, D. , Guo, X. et al. Experimental Study of Aseismic Behaviors of Flexural Tenon Joint, Through Tenon Joint and Dovetail Joint Reinforced With Flat Steel Devices [扁钢加固半榫,透榫及燕尾榫抗震性能试验研究] [J]. | Journal of Beijing University of Technology , 2019 , 45 (8) : 763-771 . |
| MLA | Huan, J. et al. "Experimental Study of Aseismic Behaviors of Flexural Tenon Joint, Through Tenon Joint and Dovetail Joint Reinforced With Flat Steel Devices [扁钢加固半榫,透榫及燕尾榫抗震性能试验研究]" . | Journal of Beijing University of Technology 45 . 8 (2019) : 763-771 . |
| APA | Huan, J. , Ma, D. , Guo, X. , Xu, S. . Experimental Study of Aseismic Behaviors of Flexural Tenon Joint, Through Tenon Joint and Dovetail Joint Reinforced With Flat Steel Devices [扁钢加固半榫,透榫及燕尾榫抗震性能试验研究] . | Journal of Beijing University of Technology , 2019 , 45 (8) , 763-771 . |
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Abstract ：
Broadband and omnidirectional antireflection coating is generally an effective way to improve solar cell efficiency, because the destructive interference between the reflected and incident light can maximize the light transmission into the absorption layer. In this paper, we report the incident quantum efficiency η in , not incident energy or power, as the evaluation function by the ant colony algorithm optimization method, which is a swarm-based optimization method. Also, SPCTRL2 is proposed to be incorporated for accurate optimization because the solar irradiance on a receiver plane is dependent on position, season, and time. Cities of Quito, Beijing and Moscow are selected for two- and three-layer antireflective coating optimization over λ = [300, 1100] nm and θ = [0°, 90°]. The η in increases by 0.26%, 1.37% and 4.24% for the above 3 cities, respectively, compared with that calculated by other rigorous optimization algorithms methods, which is further verified by the effect of position and time dependent solar spectrum on the antireflective coating design. © 2019 Chinese Institute of Electronics.
Keyword ：
ant colony algorithm; antireflection coating; incident quantum efficiency; SPCTRL2 ant colony algorithm; antireflection coating; incident quantum efficiency; SPCTRL2
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| GB/T 7714 | Guo, X. , Liu, Q. , Tian, H. et al. Optimization of broadband omnidirectional antireflection coatings for solar cells [J]. | Journal of Semiconductors , 2019 , 40 (3) . |
| MLA | Guo, X. et al. "Optimization of broadband omnidirectional antireflection coatings for solar cells" . | Journal of Semiconductors 40 . 3 (2019) . |
| APA | Guo, X. , Liu, Q. , Tian, H. , Li, B. , Zhou, H. , Li, C. et al. Optimization of broadband omnidirectional antireflection coatings for solar cells . | Journal of Semiconductors , 2019 , 40 (3) . |
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