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学者姓名：郭霞
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Abstract ：
Hybrid graphene/semiconductor phototransistors have attracted great attention because of their ultrahigh responsivity. However, the specific detectivity (D*) for such hybrid phototransistors obtained from source-drain electrodes is assumed to be 1/f noise. In this paper, D* of ~1.82×1011 Jones was achieved from source-gate electrodes. Compared with the same device which was measured from source-drain electrodes, D* was improved by ~500 times. This could be attributed to the carrier trapping and detrapping processes having been screened by the Schottky barrier at the interface. The rise and decay times were 4 ms and 37 ms, respectively. The temporal response speed also correspondingly improved by ~2 orders of magnitude. This work provides an alternative route toward light photodetectors with high specific detectivity and speed. Copyright ©2021 Chinese Optics. All rights reserved.
Keyword ：
Schottky barrier diodes Schottky barrier diodes Phototransistors Phototransistors Graphene Graphene Electrodes Electrodes Refractory metal compounds Refractory metal compounds
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| GB/T 7714 | Tian, Hui-Jun , Liu, Qiao-Li , Yue, Heng et al. Hybrid graphene/n-GaAs photodiodes with high specific detectivity and high speed [J]. | Chinese Optics , 2021 , 14 (1) : 206-212 . |
| MLA | Tian, Hui-Jun et al. "Hybrid graphene/n-GaAs photodiodes with high specific detectivity and high speed" . | Chinese Optics 14 . 1 (2021) : 206-212 . |
| APA | Tian, Hui-Jun , Liu, Qiao-Li , Yue, Heng , Hu, An-Qi , Guo, Xia . Hybrid graphene/n-GaAs photodiodes with high specific detectivity and high speed . | Chinese Optics , 2021 , 14 (1) , 206-212 . |
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Abstract ：
混合结构的石墨烯/半导体光电晶体管因其超高的响应度而备受关注。然而,该类光电晶体管通过源-漏电极测试得到的比探测率(D~*)容易受到1/f噪声的限制。本文制备了混合结构的石墨烯/GaAs光电探测器,通过源-栅电极测得D~*大约为1.82×10~(11) Jones,与通过源-漏电极测量相比,D~*提高了约500倍。这可归因于界面上肖特基势垒对载流子俘获和释放过程的屏蔽作用。此外,探测器的上升时间和下降时间分别是4 ms和37 ms,响应速度相应地提高了2个数量级。该工作为制备高比探测率和高速的光电探测器提供了一种新的思路。
Keyword ：
比探测率 比探测率 响应速度 响应速度 石墨烯 石墨烯 光二极管 光二极管
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| GB/T 7714 | 田慧军 , 刘巧莉 , 岳恒 et al. 高比探测率和高速石墨烯/n-GaAs复合结构的光电探测器(英文) [J]. | 中国光学 , 2021 , 14 (01) : 206-212 . |
| MLA | 田慧军 et al. "高比探测率和高速石墨烯/n-GaAs复合结构的光电探测器(英文)" . | 中国光学 14 . 01 (2021) : 206-212 . |
| APA | 田慧军 , 刘巧莉 , 岳恒 , 胡安琪 , 郭霞 . 高比探测率和高速石墨烯/n-GaAs复合结构的光电探测器(英文) . | 中国光学 , 2021 , 14 (01) , 206-212 . |
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Abstract ：
高比探测率和高速石墨烯/n-GaAs复合结构的光电探测器
Keyword ：
光二极管 光二极管 比探测率 比探测率 石墨烯 石墨烯 响应速度 响应速度
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| GB/T 7714 | 田慧军 , 刘巧莉 , 岳恒 et al. 高比探测率和高速石墨烯/n-GaAs复合结构的光电探测器 [J]. | 田慧军 , 2021 , 14 (1) : 206-212 . |
| MLA | 田慧军 et al. "高比探测率和高速石墨烯/n-GaAs复合结构的光电探测器" . | 田慧军 14 . 1 (2021) : 206-212 . |
| APA | 田慧军 , 刘巧莉 , 岳恒 , 胡安琪 , 郭霞 , 中国光学 . 高比探测率和高速石墨烯/n-GaAs复合结构的光电探测器 . | 田慧军 , 2021 , 14 (1) , 206-212 . |
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Abstract ：
Gamma-ray (gamma-ray) radiation for silicon single photon avalanche diodes (Si SPADs) is evaluated, with total dose of 100 krad(Si) and dose rate of 50 rad(Si)/s by using(60)Co as the gamma-ray radiation source. The breakdown voltage, photocurrent, and gain have no obvious change after the radiation. However, both the leakage current and dark count rate increase by about one order of magnitude above the values before the radiation. Temperature-dependent current-voltage measurement results indicate that the traps caused by radiation function as generation and recombination centers. Both leakage current and dark count rate can be almost recovered after annealing at 200 degrees C for about 2 hours, which verifies the radiation damage mechanics.
Keyword ：
silicon single photon avalanche diode (Si SPAD) silicon single photon avalanche diode (Si SPAD) radiation damage radiation damage gamma-ray radiation gamma-ray radiation
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| GB/T 7714 | Liu, Qiaoli , Zhang, Haiyan , Hao, Lingxiang et al. Total dose test with gamma-ray for silicon single photon avalanche diodes* [J]. | CHINESE PHYSICS B , 2020 , 29 (8) . |
| MLA | Liu, Qiaoli et al. "Total dose test with gamma-ray for silicon single photon avalanche diodes*" . | CHINESE PHYSICS B 29 . 8 (2020) . |
| APA | Liu, Qiaoli , Zhang, Haiyan , Hao, Lingxiang , Hu, Anqi , Wu, Guang , Guo, Xia . Total dose test with gamma-ray for silicon single photon avalanche diodes* . | CHINESE PHYSICS B , 2020 , 29 (8) . |
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Abstract ：
Photodetectors based on two-dimensional (2D)/ three-dimensional (3D) semiconductor heterojunction structures are emerging as appealing candidates for high-sensitivity applications. The performances of these hybrid photodetectors are closely correlated with their current gain mechanism. Carrier recirculation is the most commonly reported mechanism. Recently, a Fermi level alignment mechanism was proposed for 2D graphene/0-dimensional (0D) quantum dot heterostructures because of the easy Fermi level tunability of the quantum dot. In this article, an interface-induced gain mechanism using this Fermi level alignment process is proposed and identified based on a 2D graphene/3D GaAs hybrid structure with comparative measurement configurations. Because of the high surface state density of GaAs, the photo-excited holes tend to become trapped at the graphene/GaAs interface, which can easily lower the interface Fermi level and the Fermi level in graphene via an alignment process. When combined with the high carrier mobility characteristics of graphene, a maximum current gain of 2520 and responsivity of 1321 A W-1 are achieved in the devices. This study clarifies the role of the interface states in the gain characteristics of some 2D/3D hybrid devices, with results that are instructive for optimal device design.
Keyword ：
graphene graphene responsivity responsivity interface-induced gain interface-induced gain GaAs GaAs photodetectors photodetectors
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| GB/T 7714 | Tian, Huijun , Hu, Anqi , Liu, Qiaoli et al. Interface-Induced High Responsivity in Hybrid Graphene/GaAs Photodetector [J]. | ADVANCED OPTICAL MATERIALS , 2020 , 8 (8) . |
| MLA | Tian, Huijun et al. "Interface-Induced High Responsivity in Hybrid Graphene/GaAs Photodetector" . | ADVANCED OPTICAL MATERIALS 8 . 8 (2020) . |
| APA | Tian, Huijun , Hu, Anqi , Liu, Qiaoli , He, Xiaoying , Guo, Xia . Interface-Induced High Responsivity in Hybrid Graphene/GaAs Photodetector . | ADVANCED OPTICAL MATERIALS , 2020 , 8 (8) . |
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Abstract ：
Graphene-based photodetector with ultra-high responsivity is an important research field of low dimensional optoelectronics applications. A number of hybrid graphene/quantum dots photodetectors with high responsivity have been developed. In this paper, the in-situ oxidation of the copper covered by monolayer graphene was studied under the oxygen-rich condition. It is found that the oxidation process first occurs at the grain boundary of graphene and the oxide is Cu2O. The intensity ratio of 2D band and G band of graphene is similar to 3, and the defect D peak is absent, which indicates that the quality of graphene is not damaged during the oxidation process. The hybrid transfer-free graphene/Cu2O photodetector is fabricated by in-situ copper oxidation. Under 450 nm laser illumination, the responsivity of the photodetector is 3.8x10(6) A/W at 0.2 V. The gain is up to 1.1x10(7), which is due to the modulation of Fermi level of graphene by Cu2O quantum dots. The photodetector exhibits the specific detectivity of 3.6x10(11) Jones. This work opens a feasible pathway to develop transfer-free graphene/semiconductor photodetector with high responsivity.
Keyword ：
Graphene Graphene In-situ In-situ Cuprous oxide Cuprous oxide Photodetector Photodetector Quantum dots Quantum dots
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| GB/T 7714 | Tian, Huijun , Liu, Qiaoli , Hu, Anqi et al. Research on in-situ oxidation of the copper covered by graphene [C] . 2020 . |
| MLA | Tian, Huijun et al. "Research on in-situ oxidation of the copper covered by graphene" . (2020) . |
| APA | Tian, Huijun , Liu, Qiaoli , Hu, Anqi , Guo, Xia . Research on in-situ oxidation of the copper covered by graphene . (2020) . |
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Abstract ：
A coupled equivalent circuit for high-speed Si photodiodes is proposed, which is composed of a traditional resistance-capacitance-limited equivalent circuit and a carrier transit-limited equivalent circuit connected by a voltage controlled current source. All the resistances and capacitances in the carrier transit-limited equivalent circuit have physical meaning according to Laplace Transform. The proposed coupled equivalent circuit was applied to the Si p-i-n photodiodes and agreed well with the measured reflection coefficients and frequency response curves. Again, the minority carrier lifetime, diffusivity and interface state is verified to be the main limiting factors to the frequency response. This improved modeling can provide an effective way to design high speed photodiodes.
Keyword ：
RC time constant RC time constant transit-limited effect transit-limited effect Carrier transport Carrier transport equivalent circuit equivalent circuit
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| GB/T 7714 | Zhan, Xuejiao , Liu, Qiaoli , Wang, Yitong et al. Coupled Equivalent Circuit for High-Speed Photodiodes [J]. | IEEE ELECTRON DEVICE LETTERS , 2019 , 40 (10) : 1654-1657 . |
| MLA | Zhan, Xuejiao et al. "Coupled Equivalent Circuit for High-Speed Photodiodes" . | IEEE ELECTRON DEVICE LETTERS 40 . 10 (2019) : 1654-1657 . |
| APA | Zhan, Xuejiao , Liu, Qiaoli , Wang, Yitong , Tian, Huijun , Hu, Anqi , He, Xiaoying et al. Coupled Equivalent Circuit for High-Speed Photodiodes . | IEEE ELECTRON DEVICE LETTERS , 2019 , 40 (10) , 1654-1657 . |
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Abstract ：
Flexible high-sensitivity photodetectors are desirable for use in future wearable optoelectronics. Graphene is attracting considerable attention because of its outstanding electrical, optical, and mechanical properties, which make graphene appealing in flexible optoelectronics and photodetection applications. In this paper, an internal current gain mechanism is proposed based on a 2D/0D photodetection system. The carrier density in the 2D material can be amplified via Fermi level modulation when a 0D quantum dot absorbs photons. An ultrahigh responsivity of more than 10(10) A W-1 and fW-scale light detectivity are achieved at room temperature using the flexible transfer-free hybrid graphene/Cu2O quantum dot photodetector developed in this work. After excessive bending, the responsivity of the photodetector still reaches 10(6) A W-1, thus demonstrating the promising flexibility of the device.
Keyword ：
graphene graphene Cu2O quantum dots Cu2O quantum dots ultrahigh responsivity ultrahigh responsivity gain mechanism gain mechanism photodetectors photodetectors
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| GB/T 7714 | Liu, Qiaoli , Tian, Huijun , Li, Jingwei et al. Hybrid Graphene/Cu2O Quantum Dot Photodetectors with Ultrahigh Responsivity [J]. | ADVANCED OPTICAL MATERIALS , 2019 , 7 (20) . |
| MLA | Liu, Qiaoli et al. "Hybrid Graphene/Cu2O Quantum Dot Photodetectors with Ultrahigh Responsivity" . | ADVANCED OPTICAL MATERIALS 7 . 20 (2019) . |
| APA | Liu, Qiaoli , Tian, Huijun , Li, Jingwei , Hu, Anqi , He, Xiaoying , Sui, Mauling et al. Hybrid Graphene/Cu2O Quantum Dot Photodetectors with Ultrahigh Responsivity . | ADVANCED OPTICAL MATERIALS , 2019 , 7 (20) . |
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Abstract ：
Highly sensitive photodetection is indispensable in applications, such as remote sensing, imaging, and smoke alarming. III-V nitrides are promising candidates for photodetectors due to their continuously tunable bandgap, radiation hardness, and temperature stability. However, the sensitivity of traditional III-V nitride-based photodetectors is limited by poor crystal quality which stems from lattice mismatch-induced point defects and dislocations. Recently, a new type of graphene-colloidal quantum dot (QD) hybrid phototransistor has been preferentially used to obtain high detection sensitivity, but III-V nitride-based colloidal QDs are hard to synthesize. Here, a highly sensitive QD/graphene hybrid photodetector is demonstrated by using self-assembled InGaN QDs. The photoconductance in the 2D graphene sheet is tuned by photogenerated carriers in the quantum dots when illuminated, and this effect leads to a current gain mechanism. The photodetector achieves an ultrahigh responsivity over 10(9) A W-1, a current gain of 10(9) and fW light detectivity even at room temperature. This study paves the way for new types of highly sensitive III-V nitride-based photodetectors despite the insufficient crystal quality.
Keyword ：
InGaN quantum dots InGaN quantum dots graphene graphene ultrahigh sensitivity ultrahigh sensitivity photodetectors photodetectors
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| GB/T 7714 | Hu, Anqi , Tian, Huijun , Liu, Qiaoli et al. Graphene on Self-Assembled InGaN Quantum Dots Enabling Ultrahighly Sensitive Photodetectors [J]. | ADVANCED OPTICAL MATERIALS , 2019 , 7 (8) . |
| MLA | Hu, Anqi et al. "Graphene on Self-Assembled InGaN Quantum Dots Enabling Ultrahighly Sensitive Photodetectors" . | ADVANCED OPTICAL MATERIALS 7 . 8 (2019) . |
| APA | Hu, Anqi , Tian, Huijun , Liu, Qiaoli , Wang, Lei , Wang, Lai , He, Xiaoying et al. Graphene on Self-Assembled InGaN Quantum Dots Enabling Ultrahighly Sensitive Photodetectors . | ADVANCED OPTICAL MATERIALS , 2019 , 7 (8) . |
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Abstract ：
The 4.2% mismatch at the Si/Ge interface has a significant impact on Si/Ge photodetectors. However, few researchers have attempted to determine the major noise source or study the effects of the Si/Ge interface on the dark current, the responsivity and the 3-dB bandwidth of these devices. In this letter, we found that the dark current was dominated by generation-recombination processes that were enhanced by trap-assisted-tunneling around the interface below 220 K, with a characteristic tunneling energy of E-00 = 14 meV corresponding to an effective mass of m* = 18m(0). This behavior can be explained by the rise in the heavy-hole band caused by the compressive strain on the Ge layer. When the temperature increased above 240 K, Shockley-Read-Hall recombination was clearly observed and believed to be dominant. The responsivity, the collection efficiency and the absorption efficiency were all extracted at 850 nm, 1310 nm, and 1550 nm. The absorption coefficient around the interface was found to be lower than that of the bulk material. In addition, comparison of the measured 3-dB frequency (similar to 20.6 GHz @ -0.5 V) with the theoretical value (similar to 29.37 GHz) indicated that defects have little effect on the bandwidth at high frequencies.
Keyword ：
germanium germanium Photodetector Photodetector
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| GB/T 7714 | Li, Chong , Li, Ben , Qin, Shihong et al. Effects of Interface States on Ge-On-SOI Photodiodes [J]. | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY , 2019 , 7 (1) : 7-12 . |
| MLA | Li, Chong et al. "Effects of Interface States on Ge-On-SOI Photodiodes" . | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 7 . 1 (2019) : 7-12 . |
| APA | Li, Chong , Li, Ben , Qin, Shihong , Su, Jiale , He, Xiaoying , Guo, Xia . Effects of Interface States on Ge-On-SOI Photodiodes . | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY , 2019 , 7 (1) , 7-12 . |
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