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学者姓名：张永哲
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Abstract ：
Phase transitions induce significant changes in the electrical and photonic properties of materials. Ultra-sensitive photodetectors leveraging material phase transitions can be realized near the transition temperature. Photodetectors based on Ta2NiSe5, a room-temperature excitonic insulator phase transition material, exhibit exceptional performance from visible to terahertz frequencies. Specifically, in the terahertz range, the electronic bandwidth is 360 kHz, and the specific detectivity (D*) reaches 5.3 x 1011 cmHz1/2W-1. The van der Waals heterostructure of Ta2NiSe5/WS2 further enhances performance.
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| GB/T 7714 | Wu, Yi , Deng, Wenjie , Zhang, Yongzhe . Excitonic insulator powers room-temperature ultra-sensitive visible to terahertz detection [J]. | LIGHT-SCIENCE & APPLICATIONS , 2025 , 14 (1) . |
| MLA | Wu, Yi 等. "Excitonic insulator powers room-temperature ultra-sensitive visible to terahertz detection" . | LIGHT-SCIENCE & APPLICATIONS 14 . 1 (2025) . |
| APA | Wu, Yi , Deng, Wenjie , Zhang, Yongzhe . Excitonic insulator powers room-temperature ultra-sensitive visible to terahertz detection . | LIGHT-SCIENCE & APPLICATIONS , 2025 , 14 (1) . |
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Abstract ：
The synaptic transistor, which is a neuromorphic device with brain-like functions, has garnered significant attention due to characteristics such as low energy consumption, high integration, multiple functions, and high computational efficiency. However, the current synaptic transistor possesses a complicated structure and involves complex manufacturing steps, which is not conducive to low-cost, large-scale bionic integration. Herein, we introduce a simple MoS2 synaptic transistor exhibiting robust synaptic plasticity. This transistor utilizes magnetron sputtering manufacture to combine the process of device metal electrode deposition and the introduction of defect states, which helps streamline the manufacturing process into a single step. The long-term potentiation and long-term depression in photoelectric coordination are initially revealed. Subsequently, biological functions, such as double pulse facilitation and the transformation behavior of short-term memory to long-term memory, are thoroughly evaluated, along with learning-forgetting-relearning processes. Interestingly, the device exhibits robust synaptic plasticity until incident light angles down to 30 degrees to imitate the multi-to-one axon-cellular synapses. Finally, a classical simulation of Pavlov's dog conditioned reflex is demonstrated along with the multiview extraction applications. The experimental results demonstrate a promising synaptic transistor with a simple structure, manufacturing technique, and excellent performance. This further indicates the potential for large-scale integration of bionic neuromorphic systems.
Keyword ：
one-step manufacture one-step manufacture artificial synaptic device artificial synaptic device synaptic plasticity synaptic plasticity process optimization process optimization bionic simulation bionic simulation
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| GB/T 7714 | Guo, Yihao , Wang, Yang , Deng, Wenjie et al. MoS2 synaptic transistor with one-step manufacture [J]. | SCIENCE CHINA-INFORMATION SCIENCES , 2025 , 68 (1) . |
| MLA | Guo, Yihao et al. "MoS2 synaptic transistor with one-step manufacture" . | SCIENCE CHINA-INFORMATION SCIENCES 68 . 1 (2025) . |
| APA | Guo, Yihao , Wang, Yang , Deng, Wenjie , Wu, Yi , Li, Jingtao , Li, Kexin et al. MoS2 synaptic transistor with one-step manufacture . | SCIENCE CHINA-INFORMATION SCIENCES , 2025 , 68 (1) . |
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Abstract ：
PERC solar cell technology, which emerged in the 1980s, has garnered a substantial portion of the PV market over the past decade. However, the main factors limiting their further efficiency advancements and wider commercialization lie in metal contact recombination and the passivation properties of the functional layers. Despite heterojunction cells demonstrating remarkable efficiency, challenges persist in terms of cost reduction and stability enhancement. This study introduces a novel hybrid solar cell architecture that integrates a diffusion-free front surface field with a high-quality heterojunction passivation contact. Through rigorous simulation analysis, it is revealed that the hybrid design surpasses conventional PERC in several key aspects: diminished front-surface recombination losses, enhanced rear-contact characteristics, and reduced grid shading. By strategically optimizing the front passivation and adopting single-side wet etching techniques, a PCE of 24.17% and VOC of 716 mV is successfully achieved on a full-size commercial czochralski silicon wafer (274.15 cm2). Additionally, both experimental EQE tests and simulations delve into the composition of JSC gain during the optimization process. This comprehensive investigation not only offers an in-depth assessment of hybrid solar cell performance, but also outlines promising avenues for future optimization aimed at pushing theoretical efficiency limits further and enhancing suitability for large-scale production.
Keyword ：
hybrid solar cell hybrid solar cell passivation contact passivation contact simulation simulation FELA FELA
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| GB/T 7714 | Zhou, Zixiao , Kang, Qian , Sun, Zhaoqing et al. Optimization Strategies and Efficiency Prediction for Silicon Solar Cells with Hybrid Route of PERC and SHJ Passivation Contact [J]. | ADVANCED SCIENCE , 2025 . |
| MLA | Zhou, Zixiao et al. "Optimization Strategies and Efficiency Prediction for Silicon Solar Cells with Hybrid Route of PERC and SHJ Passivation Contact" . | ADVANCED SCIENCE (2025) . |
| APA | Zhou, Zixiao , Kang, Qian , Sun, Zhaoqing , He, Yongcai , Li, Jingjie , Wu, Lu et al. Optimization Strategies and Efficiency Prediction for Silicon Solar Cells with Hybrid Route of PERC and SHJ Passivation Contact . | ADVANCED SCIENCE , 2025 . |
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Abstract ：
Designing an effective carrier-transport layer is crucial for achieving highly crystalline silicon (c-Si) solar cells. MoOX, with its high work function and wide bandgap, is the preferred choice for hole-transport-layer (HTL) materials in c-Si solar cells. However, the limited reflection ability and conductivity of MoOX in the rear contact lead to a decrease in the short-circuit current of the solar cells. In this study, an ultrathin Au interlayer is inserted between two MoOX layers to construct a MoOX/Au/MoOX (MAM) composite HTL. First, the composite HTL with a high work function (Au) contributes to upward band bending at the c-Si surface to render excellent hole selectivity. Second, the MAM composite HTL effectively improves the backside reflectance of the devices at long wavelengths. Moreover, the insertion of Au introduces oxygen vacancies into the MAM composite HTL, resulting in a high conductivity of 7.592 x 10(-2) S m(-1). The conductivity of the MAM composite is an order of magnitude higher than that of single-layer MoOX, which increases the short-circuit current density of the corresponding device by 1.7 mA cm(-2). Consequently, the MAM-based solar cells show a power conversion efficiency (PCE) of 22.0%, representing the highest PCE reported for MoOX-based p-type c-Si solar cells.
Keyword ：
power conversion efficiencies power conversion efficiencies oxides/metals/oxides oxides/metals/oxides dopant free dopant free crystalline silicon solar cells crystalline silicon solar cells composite hole-transport layers composite hole-transport layers
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| GB/T 7714 | Lu, Wanyu , Kang, Qian , Li, Jingjie et al. MoOX/Au/MoOX-Based Composite Heterocontacts for Crystalline Silicon Solar Cells Achieving 22.0% Efficiency [J]. | SMALL STRUCTURES , 2025 . |
| MLA | Lu, Wanyu et al. "MoOX/Au/MoOX-Based Composite Heterocontacts for Crystalline Silicon Solar Cells Achieving 22.0% Efficiency" . | SMALL STRUCTURES (2025) . |
| APA | Lu, Wanyu , Kang, Qian , Li, Jingjie , Xu, Xiaofei , Yuan, Dayong , Yang, Linfeng et al. MoOX/Au/MoOX-Based Composite Heterocontacts for Crystalline Silicon Solar Cells Achieving 22.0% Efficiency . | SMALL STRUCTURES , 2025 . |
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Abstract ：
Dynamic detection is crucial for intelligent vision systems, enabling applications like autonomous vehicles and advanced surveillance. Event-based sensors, which convert illumination variations into sparse event spikes, are highly effective for dynamic detection with low data redundancy. However, current event-based vision sensors with simplified photosensitive capacitor structures face limitations, particularly in their spectral response, which hinders effective information acquisition in multispectral scenes. Here, we introduce a two-terminal thin-film event-based vision sensor that innovatively integrates an inorganic oxide p-n junction with the pyro-phototronic effect, synergistically combining the photovoltaic and pyroelectric mechanisms. This innovation enables spiking signals with a tenfold increase in responsivity, a dynamic range of 110 dB, and an extended spectral response from ultraviolet (UV) to near-infrared (NIR). With a thin-film sensor array, these spiking signals accurately extract fingerprint edge features even under low-light conditions, benefiting from high sensitivity to minor luminance variations. Additionally, the sensors' broadband spiking response captures richer information, achieving 99.25% accuracy in multispectral dynamic gesture recognition while reducing data processing by over 65%. This approach effectively eliminates redundant data while minimizing information loss, offering a promising alternative to current dynamic perception technologies. image
Keyword ：
event-based vision event-based vision motion detection motion detection in-sensor processing in-sensor processing multispectral perception multispectral perception
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| GB/T 7714 | Li, Kexin , Wang, Xiaoting , Wu, Yi et al. Thin-film event-based vision sensors for enhanced multispectral perception beyond human vision [J]. | INFOMAT , 2025 . |
| MLA | Li, Kexin et al. "Thin-film event-based vision sensors for enhanced multispectral perception beyond human vision" . | INFOMAT (2025) . |
| APA | Li, Kexin , Wang, Xiaoting , Wu, Yi , Deng, Wenjie , Li, Jing , Li, Jingjie et al. Thin-film event-based vision sensors for enhanced multispectral perception beyond human vision . | INFOMAT , 2025 . |
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Abstract ：
Two-dimensional (2D) ferroelectric field-effect transistors (Fe-FETs) based on p-n junctions are the basic units of future neuromorphic hardware. The In2Se3 semiconductor with ferroelectric, photoelectric, and phase transition properties possesses great application potential for in-sensor computing, but its ferroelectric p-n junction (FePNJ) is not well investigated. Here, we present an optoelectronic synapse made of uniformly full-coverage alpha-In2Se3/WSe2 FePNJ, achieving ultralow-power classification recognition and multiscale signal processing. Using chemical vapor deposition (CVD), we can obtain beta '-In2Se3/WSe2 subferroelectric p-n junctions by direct growth on SiO2/Si substrate and alpha-In2Se3/WSe2 FePNJ by phase transition. Modulated by the synergistic effect of the polarization electric field and the built-in electric field, the FePNJ exhibits significantly enhanced and highly tunable synaptic effects (memory retention >2500 s and >8 multilevel current states under single optical/electrical pulses), along with power consumption down to atto-joule levels. Utilizing these photoelectric properties, we constructed an all-ferroelectric in-sensor reservoir computing system, comprising both reservoir and readout networks, achieving ultralow-power handwritten digit recognition. We also created a multiscale reservoir computing system through the gate-voltage-modulated relaxation time scale of the FePNJ, which can efficiently detect motions in the 1 to 100 km h(-1) speed range.
Keyword ：
ferroelectric p-njunction ferroelectric p-njunction multiscale signal processing multiscale signal processing optoelectronic synapse optoelectronic synapse ultralow power ultralow power chemical vapor deposition chemical vapor deposition
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| GB/T 7714 | Li, Jing , Wang, Xiaoting , Ma, Yang et al. Phase-Engineered In2Se3 Ferroelectric P-N Junctions in Phototransistors for Ultra-Low Power and Multiscale Reservoir Computing [J]. | ACS NANO , 2025 , 19 (13) : 13220-13229 . |
| MLA | Li, Jing et al. "Phase-Engineered In2Se3 Ferroelectric P-N Junctions in Phototransistors for Ultra-Low Power and Multiscale Reservoir Computing" . | ACS NANO 19 . 13 (2025) : 13220-13229 . |
| APA | Li, Jing , Wang, Xiaoting , Ma, Yang , Han, Wei , Li, Kexin , Li, Jingtao et al. Phase-Engineered In2Se3 Ferroelectric P-N Junctions in Phototransistors for Ultra-Low Power and Multiscale Reservoir Computing . | ACS NANO , 2025 , 19 (13) , 13220-13229 . |
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Grain boundaries (GBs) have a significant role in polycrystalline perovskite solar cells (PSCs). However, there is ongoing debate regarding the impact of GBs on the performance and long-term stability of PSCs. Employing the first-principles molecular dynamics for perovskites, the iodine vacancy defect migrations both in bulk and at GBs are investigated. i) The positive iodine vacancy (VI+) is found that have both lower formation energy (1.4 eV) and activation energy (0.18 eV) than those of neutral iodine vacancy (VI), statistically. It indicated the VI+ acts as the dominant migrated iodine vacancy rather than VI; ii) the iodine vacancy at GBs has approximate to 0.48 eV higher activation energy than those in bulk, which leads to the accumulation of iodine vacancy at GBs; iii) the presence of VI+ result in a 3-fold increase in charge recombination ratio at GBs, compared to pristine PSCs. Based on quantum molecular dynamics statistical results, which are consistent with experimental measurements, insights into iodine vacancy migration both at GBs and in the bulk are gained. This understanding can be valuable for defects engineering related to ion migration, in order to improve the long-term stability and promote the performance of PSCs. Understanding defects engineering related to ion migration is crucial for enhancing the long-term stability and performance of hybrid perovskite solar cells. Iodine vacancies accumulate at grain boundaries due to lower formation energy and higher migration potential barrier compared to those in the bulk, which further increase the nonradiative recombination. image
Keyword ：
charge recombination charge recombination ion migration ion migration Ab-initio molecular dynamics simulations Ab-initio molecular dynamics simulations perovskite perovskite grain boundaries grain boundaries
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| GB/T 7714 | Zhou, Wencai , Chen, Xiaoqing , Zhou, Rongkun et al. The Role of Grain Boundaries on Ion Migration and Charge Recombination in Halide Perovskites [J]. | SMALL , 2024 , 20 (32) . |
| MLA | Zhou, Wencai et al. "The Role of Grain Boundaries on Ion Migration and Charge Recombination in Halide Perovskites" . | SMALL 20 . 32 (2024) . |
| APA | Zhou, Wencai , Chen, Xiaoqing , Zhou, Rongkun , Cai, Hongbo , Wang, Yun , Zhang, Tiankai et al. The Role of Grain Boundaries on Ion Migration and Charge Recombination in Halide Perovskites . | SMALL , 2024 , 20 (32) . |
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Abstract ：
Two-dimensional materials with high anisotropic optical properties and high exciton binding energy offer great advantages for developing nanostructure electronic and optoelectronic devices. However, conduction electron scattering from surface defects caused by the short width and length of the channel layer in semiconductor devices blocks their application. In this research, NaP15 is considered as another kind of layered material with high anisotropic properties. Its anisotropic layered structure was revealed by its detailed crystal structure and electron-density distribution calculation, which showed two antiparallel rows of pentagonal P tubes interacting with weak Coulomb forces and four adjacent P tubes in one unit coordinated by Na atoms. The outstanding chemical stability, angle-resolved polarized and temperature-dependent Raman spectroscopy, and neutral exciton emission caused by surface state excitation in exfoliated NaP15 nanoribbons at room temperature clearly reveal its one-dimensional layered property. The distinctive structural characteristics and electronic properties render it with substantial potential for applications in the realm of polarimetric detectors.
Keyword ：
quasi-1D nanoribbon quasi-1D nanoribbon anisotropicexcitonresponse anisotropicexcitonresponse NaP15 NaP15 anisotropic temperature-dependent Raman anisotropic temperature-dependent Raman anisotropy anisotropy
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| GB/T 7714 | Li, Guoliang , Zhang, Dandan , Tian, Nan et al. Exfoliated Layered NaP15 Nanoribbons with Anisotropic Properties for Polarization Devices [J]. | ACS APPLIED NANO MATERIALS , 2024 , 7 (12) : 14487-14493 . |
| MLA | Li, Guoliang et al. "Exfoliated Layered NaP15 Nanoribbons with Anisotropic Properties for Polarization Devices" . | ACS APPLIED NANO MATERIALS 7 . 12 (2024) : 14487-14493 . |
| APA | Li, Guoliang , Zhang, Dandan , Tian, Nan , Liu, Danmin , Zhang, Yongzhe , Yang, Yanhan . Exfoliated Layered NaP15 Nanoribbons with Anisotropic Properties for Polarization Devices . | ACS APPLIED NANO MATERIALS , 2024 , 7 (12) , 14487-14493 . |
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Abstract ：
High-definition near-eye display technology has extremely close sight distance, placing a higher demand on the size, performance, and array of light-emitting pixel devices. Based on the excellent photoelectric performance of metal halide perovskite materials, perovskite light-emitting diodes (PeLEDs) have high photoelectric conversion efficiency, adjustable emission spectra, and excellent charge transfer characteristics, demonstrating great prospects as next-generation light sources. Despite their potential, the solubility of perovskite in photoresist presents a hurdle for conventional micro/nano processing techniques, resulting in device sizes typically exceeding 50 mu m. This limitation impedes the further downsizing of perovskite-based components. Herein, we propose a plane-structured PeLED device that can achieve microscale light-emitting diodes with a single pixel device size < 2 mu m and a luminescence lifetime of approximately 3 s. This is accomplished by fabricating a patterned substrate and regulating ion distribution in the perovskite through self-doping effects to form a PN junction. This breakthrough overcomes the technical challenge of perovskite-photoresist incompatibility, which has hindered the development of perovskite materials in micro/nano optoelectronic devices. The strides made in this study open up promising avenues for the advancement of PeLEDs within the realm of micro/nano optoelectronic devices.
Keyword ：
passivation passivation ion migration ion migration perovskite perovskite light-emitting diode light-emitting diode self-doping self-doping
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| GB/T 7714 | Gao, Wenzhe , Huang, He , Wang, Chenming et al. Microscale Lateral Perovskite Light Emitting Diode Realized by Self-Doping Phenomenon [J]. | SENSORS , 2024 , 24 (14) . |
| MLA | Gao, Wenzhe et al. "Microscale Lateral Perovskite Light Emitting Diode Realized by Self-Doping Phenomenon" . | SENSORS 24 . 14 (2024) . |
| APA | Gao, Wenzhe , Huang, He , Wang, Chenming , Zhang, Yongzhe , Zheng, Zilong , Li, Jinpeng et al. Microscale Lateral Perovskite Light Emitting Diode Realized by Self-Doping Phenomenon . | SENSORS , 2024 , 24 (14) . |
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Abstract ：
Currently, colloidal quantum dots (CQDs) photodetectors have shown significant advancement in the field of infrared photodetection. However, the immature analysis of dark current components hinders the realization of higher performance quantum dots optoelectrical devices. In this study, based on a PbS CQD photodetector, we employ a conventional dark current model of infrared photodetectors to analyze the dark current components of the device, yielding fitting results highly consistent with experimental observations. Our findings indicate that with increasing reverse bias, the dominant dark current components of the PbS CQD photodetector shift from diffusion (Diff) current, generation-recombination (G-R) current, and shunt (sh) current to trap-assisted tunneling (TAT) current. The band diagrams, recombination rates, carrier density distributions, and electric field intensity maps under different biases are further simulated, of which the theoretical results confirm that current components transition is attributed to the abundance of defects in quantum dot materials, leading to tunneling at the interface between the SnO2 layer and PbS-I layer under high bias conditions. Our work contributes to providing insight and direction for optimizing the CQD photodetector performances.
Keyword ：
tunneling tunneling Colloidal quantum dots (CQDs) Colloidal quantum dots (CQDs) photodetectors photodetectors electrooptic devices electrooptic devices
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| GB/T 7714 | Yan, Qi , Deng, Wenjie , Ma, Xueliang et al. Trap-Assisted Tunneling in PbS Colloidal Quantum Dots Photodetector [J]. | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2024 , 71 (10) : 6085-6090 . |
| MLA | Yan, Qi et al. "Trap-Assisted Tunneling in PbS Colloidal Quantum Dots Photodetector" . | IEEE TRANSACTIONS ON ELECTRON DEVICES 71 . 10 (2024) : 6085-6090 . |
| APA | Yan, Qi , Deng, Wenjie , Ma, Xueliang , Wu, Yi , Li, Jingzhen , You, Congya et al. Trap-Assisted Tunneling in PbS Colloidal Quantum Dots Photodetector . | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2024 , 71 (10) , 6085-6090 . |
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