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学者姓名：张永哲
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Abstract ：
Reconfigurable devices can be used to achieve multiple logic operation and intelligent optical sensing with low power consumption, which is promising candidates for new generation electronic and optoelectronic integrated circuits. However, the versatility is still limited and need to be extended by the device architectures design. Here, we report an asymmetrically gate two-dimensional (2D) van der Waals heterostructure with hybrid dielectric layer SiO2/hexagonal boron nitride (h-BN), which enable rich function including reconfigurable logic operation and in-sensor information encryption enabled by both volatile and nonvolatile optoelectrical modulation. When the partial gate is grounded, the non-volatile light assisted electrostatic doping endowed partially reconfigurable doping between n-type and p-type, which allow the switching of logic XOR and not implication (NIMP). When the global gate is grounded, additionally taking the optical signal as another input signal, logic AND and OR is realized by combined regulation of the light and localized gate voltage. Depending on the high on/off current ratio approaching 105 and reliable & switchable logic gate, in-sensor information encryption and decryption is demonstrated by manipulating the logic output. Hence, these results provide strong extension for current reconfigurable electronic and optoelectronic devices.
Keyword ：
van der Waals heterostructure van der Waals heterostructure reconfigurable logic reconfigurable logic in-sensor encryption in-sensor encryption asymmetrical tunable architecture asymmetrical tunable architecture
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| GB/T 7714 | Gong, Fan , Deng, Wenjie , Wu, Yi et al. Reconfigurable logic and in-sensor encryption operations in an asymmetrically tunable van der Waals heterostructure [J]. | NANO RESEARCH , 2023 . |
| MLA | Gong, Fan et al. "Reconfigurable logic and in-sensor encryption operations in an asymmetrically tunable van der Waals heterostructure" . | NANO RESEARCH (2023) . |
| APA | Gong, Fan , Deng, Wenjie , Wu, Yi , Liu, Fengming , Guo, Yihao , Che, Zelin et al. Reconfigurable logic and in-sensor encryption operations in an asymmetrically tunable van der Waals heterostructure . | NANO RESEARCH , 2023 . |
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Abstract ：
Two-dimensional (2D) ferroelectric field-effect transistors (Fe-FETs) have attracted extensive interest as a competitive platform for implementing future-generation functional electronics, including digital memory and brain-inspired computing circuits. In 2D Fe-FETs, the 2D ferroelectric materials are more suitable as gate dielectric materials compared to 3D ferroelectric materials. However, the current 2D ferroelectric materials (represented by alpha-In2Se3) need to be integrated with other 3D gate dielectric layers because of their high conductivity as a ferroelectric semiconductor. This 2D/3D hybrid structure can lead to compatibility problems in practical devices. In this study, a new 2D gate dielectric material that is compatible with the complementary metal-oxide semiconductor process was found by using oxygen plasma treatment. The 2D gate dielectric material obtained shows excellent performance, with an equivalent oxide thickness of less than 0.15 nm, and excellent insulation, with a leakage current of less than 2 x 10(-5) A cm(-2) (under a 1 V gate voltage). Based on this dielectric layer and the alpha-In2Se3 ferroelectric gate material, we fabricated an all-2D Fe-FET high-performance photodetector with a high on/off ratio (similar to 10(5)) and detectivity (>10(13) Jones). Moreover, the photoelectric device integrates perception, memory and computing characteristics, indicating that it can be applied to an artificial neural network for visual recognition.
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| GB/T 7714 | Li, Xuhong , Chen, Xiaoqing , Deng, Wenjie et al. An all-two-dimensional Fe-FET retinomorphic sensor based on the novel gate dielectric In2Se3-xOx [J]. | NANOSCALE , 2023 , 15 (25) : 10705-10714 . |
| MLA | Li, Xuhong et al. "An all-two-dimensional Fe-FET retinomorphic sensor based on the novel gate dielectric In2Se3-xOx" . | NANOSCALE 15 . 25 (2023) : 10705-10714 . |
| APA | Li, Xuhong , Chen, Xiaoqing , Deng, Wenjie , Li, Songyu , An, Boxing , Chu, Feihong et al. An all-two-dimensional Fe-FET retinomorphic sensor based on the novel gate dielectric In2Se3-xOx . | NANOSCALE , 2023 , 15 (25) , 10705-10714 . |
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Abstract ：
This review summarizes the operational principles of Indium Arsenide (InAs) nanowire photodetectors under different light conditions and the various approaches designed to optimize their performance. InAs nanowires are highly regarded as potential candidates for the next generation of optoelectronic devices, attributed to their exceptional optical and electrical characteristics. However, the surface states and defects of InAs nanowires lead to complex photoresponse mechanisms under different illumination conditions and greatly affect their performance. Therefore, various approaches have been proposed to enhance their performance, including surface passivation, doping, and construction of heterojunctions, etc. This review categorizes these different techniques, discusses their respective advantages and limitations, and provides an outlook on future developments in this field.
Keyword ：
Photodetector Photodetector InAs InAs Nanowire Nanowire Infrared Infrared
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| GB/T 7714 | Chen, Haonan , Li, Jingzhen , Cao, Shengzhu et al. InAs nanowire visible-infrared detector photoresponse engineering [J]. | INFRARED PHYSICS & TECHNOLOGY , 2023 , 133 . |
| MLA | Chen, Haonan et al. "InAs nanowire visible-infrared detector photoresponse engineering" . | INFRARED PHYSICS & TECHNOLOGY 133 (2023) . |
| APA | Chen, Haonan , Li, Jingzhen , Cao, Shengzhu , Deng, Wenjie , Zhang, Yongzhe . InAs nanowire visible-infrared detector photoresponse engineering . | INFRARED PHYSICS & TECHNOLOGY , 2023 , 133 . |
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Abstract ：
The photovoltaic effect can directly harvest solar energy by converting optical signals into current without external bias and thus is a practical and sustainable approach for low-power, high-linearity, and gate-switchable optoelectronic devices. With the scientific modulation of carrier types, various photovoltaic heterostructures and related devices have been developed. Here, this article reviews the implementation of high-performance photovoltaic devices based on two-dimensional (2D) heterostructures of lateral and vertical structural configurations. And the related functional applications are mainly introduced further, including 2D polarization-sensitive-enhanced photovoltaic devices, 2D optoelectronic logic devices, and recent emerging 2D neuromorphic devices for artificial intelligence applications. For each section, the device design, performance, and working principles are systematically investigated and discussed. Finally, the challenges and perspectives of functional 2D photovoltaic detectors in relevant emerging applications are presented to accelerate future research.
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| GB/T 7714 | Li, Xiang , Wang, Xiaoting , Ma, Yang et al. Recent progress in functional two-dimensional photovoltaic photodetectors and related emerging applications [J]. | JOURNAL OF MATERIALS CHEMISTRY A , 2023 , 11 (22) : 11548-11571 . |
| MLA | Li, Xiang et al. "Recent progress in functional two-dimensional photovoltaic photodetectors and related emerging applications" . | JOURNAL OF MATERIALS CHEMISTRY A 11 . 22 (2023) : 11548-11571 . |
| APA | Li, Xiang , Wang, Xiaoting , Ma, Yang , Deng, Wenjie , Wu, Yi , Li, Jingtao et al. Recent progress in functional two-dimensional photovoltaic photodetectors and related emerging applications . | JOURNAL OF MATERIALS CHEMISTRY A , 2023 , 11 (22) , 11548-11571 . |
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Abstract ：
Recently, the drive level capacitance profiling (DLCP) technique has been proven to be effective in resolving the spatial and energetic distributions of defects through feasible measurements. However, the discussion on its ranges and resolutions is still missing, which is urgent in evaluating the validity of the calculated defect profiles. In this work, we propose a method to analyze the ranges and resolutions of DLCP. Assuming that the test instrument has more influence on the experimental results than the experimental environment, this method can be used to evaluate the resolution of DLCP for different test instruments. Through revisiting the equations involved in DLCP, we learned that the sources of the limits and resolutions are (1) the instrument system error and inherent resolution and (2) the device impedance. Consequently, from the study of device impedance and the measuring instrument system error, the resolutions of DLCP could be calculated according to the error propagation theory. We provide the spatial distribution of the minimum selection range of AC signal dV used by DLCP and the spatial resolution of DLCP technology. This method can be used to evaluate the resolution of DLCP for different test instruments.
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| GB/T 7714 | Zhang, Xin , Ma, Yang , Zhang, Zihang et al. The resolutions of drive-level capacitance profiling technique [J]. | REVIEW OF SCIENTIFIC INSTRUMENTS , 2023 , 94 (6) . |
| MLA | Zhang, Xin et al. "The resolutions of drive-level capacitance profiling technique" . | REVIEW OF SCIENTIFIC INSTRUMENTS 94 . 6 (2023) . |
| APA | Zhang, Xin , Ma, Yang , Zhang, Zihang , Zhang, Xiaobo , Yan, Hui , Chen, Xiaoqing et al. The resolutions of drive-level capacitance profiling technique . | REVIEW OF SCIENTIFIC INSTRUMENTS , 2023 , 94 (6) . |
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Abstract ：
The infrared imaging performance of type-II superlattice (T2SL) has been widely used in civil and aerospace fields. Due to the special band structure and material properties, the T2SL has the advantages of the adjustable bandgap, a wide range of spectral response (2-30 mu m), effectively inhibiting Auger recombination, low cost, and good uniformity in large areas. InAs/GaSb T2SL is considered to be a promising material to advance the performance of photoelectric devices, especially in the long-wave range. With the development of science and technology and the continuous efforts of scientists, the T2SL has made great progress in material growth, device design, and process research. However, there is still a gap to the theoretically values. This article discusses the reasons for the performance degradation of T2SL devices, especially the surface and bulk dark current factors, and introduces various methods to reduce dark current and advantages and disadvantages of these methods.
Keyword ：
infrared imaging infrared imaging InAs/GaSb InAs/GaSb Band structure Band structure superlattice superlattice dark current dark current
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| GB/T 7714 | Wang, Xiaohua , Li, Jingzhen , Yan, Yong et al. Dark Current Analysis of InAs/GaSb Type II Superlattice Infrared Detectors [J]. | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2023 . |
| MLA | Wang, Xiaohua et al. "Dark Current Analysis of InAs/GaSb Type II Superlattice Infrared Detectors" . | IEEE TRANSACTIONS ON ELECTRON DEVICES (2023) . |
| APA | Wang, Xiaohua , Li, Jingzhen , Yan, Yong , Zhang, Meiyu , Wen, Tao , Liu, Ming et al. Dark Current Analysis of InAs/GaSb Type II Superlattice Infrared Detectors . | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2023 . |
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Abstract ：
Due to the excellent electrostatic control, high mobility, large specific surface area, and suitable direct energy gap of two-dimensional (2D) indium arsenide (InAs), it is regarded as one of the most promising alternative channel materials for next-generation electronic and optoelectronic devices. Recently, 2D semiconducting InAs has been successfully prepared. Based on first-principles calculations, we calculate the mechanical, electronic, and interfacial properties of monolayer (ML) fully-hydrogen-passivated InAs (InAsH2) material. The results show that 2D InAsH2 with excellent stability has a suitable logic device band gap (1.59 eV) comparable to silicon (1.14 eV) and 2D MoS2 (1.80 eV), and the electron carrier mobility of ML InAsH2 (490 cm(2) V-1 s(-1)) is twice as large as that of 2D MoS2 (200 cm(2) V-1 s(-1)). In addition, we study the electronic structure of the interfacial contact characteristics of ML half-hydrogen-passivated InAs (InAsH) with seven bulk metals (Ag, Au, Cu, Al, Ni, Pd, Pt) and two 2D metals (ML Ti2C and ML graphene). 2D InAs was metallized after contact with the seven bulk metals and two 2D metals. Based on the above, we insert 2D boron nitride (BN) between ML InAsH and the seven low/high-power function bulk metals to eliminate the interfacial states. Remarkably, the semiconducting properties of 2D InAs with Pd and Pt electrodes are recovered, and 2D InAs achieves p-type ohmic contact with the Pt electrode, which facilitates high on-current and high-frequency operation of the transistor. Hence, this work provides systematic theoretical guidance for the design of next-generation electronic devices.
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| GB/T 7714 | Yu, Wenjing , Li, Jingzhen , Wu, Yi et al. Systematic investigation of the mechanical, electronic, and interfacial properties of high mobility monolayer InAs from first-principles calculations [J]. | PHYSICAL CHEMISTRY CHEMICAL PHYSICS , 2023 , 25 (15) : 10769-10777 . |
| MLA | Yu, Wenjing et al. "Systematic investigation of the mechanical, electronic, and interfacial properties of high mobility monolayer InAs from first-principles calculations" . | PHYSICAL CHEMISTRY CHEMICAL PHYSICS 25 . 15 (2023) : 10769-10777 . |
| APA | Yu, Wenjing , Li, Jingzhen , Wu, Yi , Lu, Jing , Zhang, Yongzhe . Systematic investigation of the mechanical, electronic, and interfacial properties of high mobility monolayer InAs from first-principles calculations . | PHYSICAL CHEMISTRY CHEMICAL PHYSICS , 2023 , 25 (15) , 10769-10777 . |
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Abstract ：
Efficient motion detection is essential for the Internet of Things. However, it suffers from overloading redundant static background information. Inspired by the human visual system, which is efficient in motion detection, we propose a silicon-based retinomorphic photodetector with a simple metal/insulator/semiconductor (MIS) structure, which is compatible with the complementary metal-oxide-semiconductor (CMOS) industry. In contrast to conventional photodetectors that generate a sustained photocurrent, our retinomorphic photodetector is sensitive only to the change in light intensity and therefore filters the redundant static background. In addition, it shows logarithmic dependence on the light intensity, which simplifies the contrast ratio measurement. Based on our moving object recognition experiment, after filtering background information, the information to be analyzed is reduced to 27.3%, thereby improving the image recognition efficiency in the subsequent processing tasks. This innovative and industry-compatible retinomorphic photodetector will facilitate the construction of future efficient motion detection systems.
Keyword ：
bio-inspired bio-inspired photodetector photodetector motion detection motion detection retina retina in-sensor computing in-sensor computing
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| GB/T 7714 | Wu, Yi , Deng, Wenjie , Chen, Xiaoqing et al. CMOS-compatible retinomorphic Si photodetector for motion detection [J]. | SCIENCE CHINA-INFORMATION SCIENCES , 2023 , 66 (6) . |
| MLA | Wu, Yi et al. "CMOS-compatible retinomorphic Si photodetector for motion detection" . | SCIENCE CHINA-INFORMATION SCIENCES 66 . 6 (2023) . |
| APA | Wu, Yi , Deng, Wenjie , Chen, Xiaoqing , Li, Jingjie , Li, Songyu , Zhang, Yongzhe . CMOS-compatible retinomorphic Si photodetector for motion detection . | SCIENCE CHINA-INFORMATION SCIENCES , 2023 , 66 (6) . |
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Abstract ：
Novel metal halide perovskite is proven to be a promising optoelectronic material. However, fabricating microscopic perovskite devices is still challenging because the perovskite is soluble with the photoresist, which conflicts with conventional microfabrication technology. The size of presently reported perovskite devices is about 50 mu m. Limited by the large size of perovskite optoelectronic devices, they cannot be readily adopted in the fields of imaging, display, etc. Herein a universal microscopic patterned doping method is proposed, which can realize microscale perovskite devices. Rather than by the conventional doping method, in this study the local Fermi level of perovskite is modulated by the redistributing intrinsic ion defects via a polling voltage. A satisfactorily stable polarized ion distribution can be achieved by optimization of the perovskite material and polling voltage, resulting in ultrafast (40 mu s), self-powered microscale (2 mu m) photodiodes. This work sheds light on a route to fabricate integrated perovskite optoelectronic chips.
Keyword ：
perovskites perovskites passivation passivation photodiodes photodiodes self-doping self-doping ion migration ion migration
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| GB/T 7714 | Cheng, Jiangong , Ma, Yang , Zhou, Wencai et al. A Universal Microscopic Patterned Doping Method for Perovskite Enables Ultrafast, Self-Powered, Ultrasmall Perovskite Photodiodes [J]. | ADVANCED MATERIALS , 2023 , 35 (28) . |
| MLA | Cheng, Jiangong et al. "A Universal Microscopic Patterned Doping Method for Perovskite Enables Ultrafast, Self-Powered, Ultrasmall Perovskite Photodiodes" . | ADVANCED MATERIALS 35 . 28 (2023) . |
| APA | Cheng, Jiangong , Ma, Yang , Zhou, Wencai , Zhang, Tong , Li, Wenling , Zhang, Xiaobo et al. A Universal Microscopic Patterned Doping Method for Perovskite Enables Ultrafast, Self-Powered, Ultrasmall Perovskite Photodiodes . | ADVANCED MATERIALS , 2023 , 35 (28) . |
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Abstract ：
To take full use of the outstanding photoelectric properties of two-dimensional transition-metal dichalcogenides (2D TMDs), techniques for tuning their band gaps have been developed, among which defect engineering is found to be an effective way for broadband spectrum photodetection. Methods like pulsed laser deposition, thermal annealing, electron/proton beam etching, etc., can effectively reduce band gaps by introducing vacancy defects into TMDs, but they face the problems of high costs, uneven distribution of prepared defects, and unstable material properties. To solve these problems, we proposed a two-step strategy from "alloy synthesis" to "vacancy introduction". Taking use of the bond energy differences between W-Se and W-Te in ternary alloy, WSe2(1-x)Te2x samples with homogeneous distributions of Se and Te were first synthesized, and then vacancy defects could be introduced through controllable release of Te atoms during a hydrogen-assisted annealing process, resulting in similar to 4.1% vacancy defects with uniform distribution. A 910 nm photoluminescence (PL) peak appears in the annealed WSe2(1-x)Te2x, exhibiting a 110 nm red shift from the 800 nm peak of the unannealed alloy. Photoresponse of up to 1000 nm of the corresponding device verifies that a broadband spectrum detection TMD device has been successfully achieved in this study.
Keyword ：
two-dimensional transition-metal dichalcogenides two-dimensional transition-metal dichalcogenides chemicalvapor deposition chemicalvapor deposition defect engineering defect engineering annealing annealing broadband spectrum detection broadband spectrum detection
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| GB/T 7714 | Li, Jingtao , Ma, Yang , Wang, Xiaoting et al. Vacancy-Defect-Regulated Two-Dimensional Transition-Metal Dichalcogenides for Broadband Spectrum Photodetection [J]. | ACS APPLIED ELECTRONIC MATERIALS , 2023 , 6 (1) : 299-309 . |
| MLA | Li, Jingtao et al. "Vacancy-Defect-Regulated Two-Dimensional Transition-Metal Dichalcogenides for Broadband Spectrum Photodetection" . | ACS APPLIED ELECTRONIC MATERIALS 6 . 1 (2023) : 299-309 . |
| APA | Li, Jingtao , Ma, Yang , Wang, Xiaoting , Li, Wenling , Li, Jingjie , Zhou, Mengchen et al. Vacancy-Defect-Regulated Two-Dimensional Transition-Metal Dichalcogenides for Broadband Spectrum Photodetection . | ACS APPLIED ELECTRONIC MATERIALS , 2023 , 6 (1) , 299-309 . |
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