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学者姓名：邓金祥
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Abstract ：
The structural and gas-sensitive properties of n-N SnO2/?(e)-Ga2O3:Sn heterostructures were investigated in detail for the first time. The ?(e)-Ga2O3:Sn and SnO2 films were grown by the halide vapor phase epitaxy and the high-frequency magnetron sputtering, respectively. The gas sensor response and speed of operation of the structures under H-2 exposure exceeded the corresponding values of single ?(e)-Ga2O3:Sn and SnO2 films within the temperature range of 25-175 & DEG;C. Meanwhile, the investigated heterostructures demonstrated a low response to CO, NH3, and CH4 gases and a high response to NO2, even at low concentrations of 100 ppm. The current responses of the SnO2/?(e)-Ga2O3:Sn structure to 10(4) ppm of H-2 and 100 ppm of NO2 were 30-47 arb. un. and 3.7 arb. un., correspondingly, at a temperature of 125 & DEG;C. The increase in the sensitivity of heterostructures at low temperatures is explained by a rise of the electron concentration and a change of a microrelief of the SnO2 film surface when depositing on ?(e)-Ga2O3:Sn. The SnO2/?(e)-Ga2O3:Sn heterostructures, having high gas sensitivity over a wide operating temperature range, can find application in various fields.
Keyword ：
n-N heterostructure n-N heterostructure SnO2 SnO2 HVPE HVPE gas sensors gas sensors Sn Sn & kappa;(& epsilon;)-Ga2O3 & kappa;(& epsilon;)-Ga2O3 magnetron sputtering magnetron sputtering
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| GB/T 7714 | Almaev, Aleksei , Yakovlev, Nikita , Kopyev, Viktor et al. High Sensitivity Low-Temperature Hydrogen Sensors Based on SnO2/& kappa;(& epsilon;)-Ga2O3:Sn Heterostructure [J]. | CHEMOSENSORS , 2023 , 11 (6) . |
| MLA | Almaev, Aleksei et al. "High Sensitivity Low-Temperature Hydrogen Sensors Based on SnO2/& kappa;(& epsilon;)-Ga2O3:Sn Heterostructure" . | CHEMOSENSORS 11 . 6 (2023) . |
| APA | Almaev, Aleksei , Yakovlev, Nikita , Kopyev, Viktor , Nikolaev, Vladimir , Butenko, Pavel , Deng, Jinxiang et al. High Sensitivity Low-Temperature Hydrogen Sensors Based on SnO2/& kappa;(& epsilon;)-Ga2O3:Sn Heterostructure . | CHEMOSENSORS , 2023 , 11 (6) . |
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Abstract ：
In this paper, rubrene:MoO3 mixed films were deposited on quartz glass and p-Si substrates using thermal evaporation technique. We fabricated the devices based on rubrene:MoO3 mixed films in the form of Al/rubrene:MoO3/p-Si/Al. The electrical characteristics of the rubrene:MoO3 film (with 1:1 weight ratio)-based devices were measured using Hall system. The results indicate the enhanced hole concentration and hole carrier mobility. In addition, the presence of charge transfer complexes leads to an increase of the conductivity and the contact between sample and electrode is almost Ohmic contact. To investigate the effect of MoO3, the rubrene:MoO3 mixed films with different concentrations of MoO3 were deposited using thermal evaporation technique and the Schottky barrier devices based on rubrene:MoO3 mixed films were fabricated. The electrical characteristics demonstrate that the charge transfer complex had been formed when rubrene and MoO3 mixed. Our results demonstrated improvement of the contact between electrode and sample in electronic devices.
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| GB/T 7714 | Li, Ruidong , Deng, Jinxiang , Chen, Liang et al. Preparation and electrical characterization of rubrene:MoO3 film [J]. | EUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICS , 2022 , 231 (6) : 1215-1219 . |
| MLA | Li, Ruidong et al. "Preparation and electrical characterization of rubrene:MoO3 film" . | EUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICS 231 . 6 (2022) : 1215-1219 . |
| APA | Li, Ruidong , Deng, Jinxiang , Chen, Liang , Kong, Le , Wang, Xiaolei , Meng, Junhua et al. Preparation and electrical characterization of rubrene:MoO3 film . | EUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICS , 2022 , 231 (6) , 1215-1219 . |
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Abstract ：
Here, niobium-doped monoclinic gallium oxide thin films of different thicknesses were deposited on p-Si (100) and quartz substrates by radio-frequency magnetron sputtering. All films were annealed in argon ambient. The crystal structure and surface morphology of the films were researched using x-ray diffraction and scanning electron microscopy. Then, their crystallite size was evaluated via the Debye-Scherrer formula. The results demonstrated that the films had a good crystal structure and a flat surface when the thickness was around 300 nm. The films' optical properties were also investigated, and the results showed that all of the films' transmittance is above 80% to ultraviolet-visible light whose wavelength is above 350 nm. Meanwhile, the films' optical band gap decreased as their thickness increased. The Urbach energy of all films was calculated by the Urbach rule, and the results indicated that the best crystal quality occurred when the thickness was around 300 nm. The films' electrical characteristics showed that the current was larger when the thickness was around 300 nm and that the contact between the Au electrode and films was Ohmic contact, independent of the film thickness and test conditions. These findings will provide useful information for the practical application of Nb-doped beta-Ga2O3 thin films.
Keyword ：
structure structure Thickness Thickness Nb-doped beta-Ga2O3 film Nb-doped beta-Ga2O3 film morphology morphology optical properties optical properties electrical characterization electrical characterization
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| GB/T 7714 | Li, Ruidong , Deng, Jinxiang , Xie, Peng et al. Effect of Thickness on Morphology, Structural, and Optical Properties of Nb-Doped beta-Ga2O3 Films Prepared by RF Magnetron Sputtering [J]. | JOURNAL OF ELECTRONIC MATERIALS , 2022 , 52 (1) : 251-257 . |
| MLA | Li, Ruidong et al. "Effect of Thickness on Morphology, Structural, and Optical Properties of Nb-Doped beta-Ga2O3 Films Prepared by RF Magnetron Sputtering" . | JOURNAL OF ELECTRONIC MATERIALS 52 . 1 (2022) : 251-257 . |
| APA | Li, Ruidong , Deng, Jinxiang , Xie, Peng , Zhang, Qing , Meng, Xue , Luo, Juxin et al. Effect of Thickness on Morphology, Structural, and Optical Properties of Nb-Doped beta-Ga2O3 Films Prepared by RF Magnetron Sputtering . | JOURNAL OF ELECTRONIC MATERIALS , 2022 , 52 (1) , 251-257 . |
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Abstract ：
Nb-doped beta-Ga2O3 films were deposited on p-Si (100) and quartz substrates using radio frequency magnetron sputtering technology at various substrate temperatures. All the films annealed in an argon ambient. The surface morphology and crystal structure of the films were studied using atomic force microscope and x-ray diffraction technologies, and the results indicated that the film had a flat surface and a good crystal structure when the substrate temperature was 523 K. We investigated the optical properties of the samples, and the results highlight that Nb-doped beta-Ga2O3 films exhibit high transmittance of above 80% to UV-visible light with a wavelength above 400 nm. Furthermore, the optical band gap of the Nb-doped beta-Ga2O3 films decreases with increasing substrate temperature. The electrical characteristics show that the current is larger, and that the contact between the Ag electrode and the Nb-doped beta-Ga2O3 film is an ohmic contact, when the substrate temperature is 523 K. All the results are beneficial for practical applications.
Keyword ：
substrate temperature substrate temperature optical properties optical properties Nb-doped beta-Ga2O3 film Nb-doped beta-Ga2O3 film morphology and roughness morphology and roughness electrical characteristics electrical characteristics
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| GB/T 7714 | Li, Ruidong , Deng, Jinxiang , Kong, Le et al. Influence of Substrate Temperature on Structure and Properties of Nb-Doped beta-Ga2O3 Films [J]. | JOURNAL OF ELECTRONIC MATERIALS , 2022 , 51 (5) : 2390-2395 . |
| MLA | Li, Ruidong et al. "Influence of Substrate Temperature on Structure and Properties of Nb-Doped beta-Ga2O3 Films" . | JOURNAL OF ELECTRONIC MATERIALS 51 . 5 (2022) : 2390-2395 . |
| APA | Li, Ruidong , Deng, Jinxiang , Kong, Le , Meng, Junhua , Luo, Juxin , Zhang, Qing et al. Influence of Substrate Temperature on Structure and Properties of Nb-Doped beta-Ga2O3 Films . | JOURNAL OF ELECTRONIC MATERIALS , 2022 , 51 (5) , 2390-2395 . |
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Abstract ：
(BixGa1-x)2O3 films were prepared at 820 °C by sol-gel method, an ethylene glycol solution of hydrated gallium nitrate and bismuth nitrate stabilized by monoethanolamine, of which crystallization, surface morphology and electronic structure as well as optical properties were studied in detail by X-ray diffraction, Scanning electron microscope-energy dispersive spectrometer, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and Ultraviolet-visible spectroscopy. XRD showed Ga2O3 film prepared from solutions consisted of two crystal structures, β and γ, increasing Bi atoms into Ga2O3 that enable the inhibition of γ phase formation and (BixGa1-x)2O3 and Ga2O3 capable of holding the same monoclinic crystal structure. EDS displayed (BixGa1-x)2O3 films of varied compositions were obtained with content of different Bi atoms into the solution, which kept same monoclinic crystal as β-Ga2O3 when Bi ranged from 0 < x < 0.056. FTIR revealed that the absorption band below 480 cm−1 corresponded to the octahedral position of Ga2O3 and the Bi atoms in the (BixGa1-x)2O3 films substituted the Ga in the [GaO6] octahedron. XPS exhibited increasing Bi content raised Ga3+/Ga ratio. UV-VIS provided evidence that optical band gap of (BixGa1-x)2O3 down to 3.2 eV indicating Bi-doping achieved Ga2O3 band gap tunable, concurrently, the bowing parameter c = 1.83 eV was obtained on the basis of the fitting curve of band gap. [Figure not available: see fulltext.]. © 2022, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.
Keyword ：
(BixGa1-x)2O3; Alloy; Band gap; Ga2O3; Sol-gel (BixGa1-x)2O3; Alloy; Band gap; Ga2O3; Sol-gel
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| GB/T 7714 | Zhang, Q. , Deng, J.X. , Li, R.D. et al. Study on the structure and properties of gallium bismuth oxide alloy thin films prepared by sol-gel method [J]. | Journal of Sol-Gel Science and Technology , 2022 , 103 (1) : 280-289 . |
| MLA | Zhang, Q. et al. "Study on the structure and properties of gallium bismuth oxide alloy thin films prepared by sol-gel method" . | Journal of Sol-Gel Science and Technology 103 . 1 (2022) : 280-289 . |
| APA | Zhang, Q. , Deng, J.X. , Li, R.D. , Luo, J.X. , Kong, L. , Meng, J.H. et al. Study on the structure and properties of gallium bismuth oxide alloy thin films prepared by sol-gel method . | Journal of Sol-Gel Science and Technology , 2022 , 103 (1) , 280-289 . |
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Abstract ：
稀土铽铕掺杂Ba_(3)Yb(PO_(4))_(3)发光材料的研究
Keyword ：
X射线衍射 X射线衍射 稀土发光 稀土发光 磷酸盐 磷酸盐 白光发光二极管 白光发光二极管
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| GB/T 7714 | 李婷婷 , 王吉有 , 刘悦 et al. 稀土铽铕掺杂Ba_(3)Yb(PO_(4))_(3)发光材料的研究 [J]. | 李婷婷 , 2021 , 37 (1) : 36-41 . |
| MLA | 李婷婷 et al. "稀土铽铕掺杂Ba_(3)Yb(PO_(4))_(3)发光材料的研究" . | 李婷婷 37 . 1 (2021) : 36-41 . |
| APA | 李婷婷 , 王吉有 , 刘悦 , 邓金祥 , 沧州师范学院学报 . 稀土铽铕掺杂Ba_(3)Yb(PO_(4))_(3)发光材料的研究 . | 李婷婷 , 2021 , 37 (1) , 36-41 . |
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Abstract ：
Topological Weyl semimetals have attracted considerable interest because they manifest underlying physics and device potential in spintronics. Large anomalous Hall effect (AHE) in non-collinear antiferromagnets (AFMs) represents a striking Weyl phase, which is associated with Bloch-band topological features. In this work, we report robust AHE and Lifshitz transition in high-quality Weyl semimetal Mn3Ge thin film, comprising stacked Kagome lattice and chiral antiferromagnetism. We successfully achieved giant AHE in our Mn3Ge film, with a strong Berry curvature enhanced by the Weyl phase. The enormous coercive field HC in our AHE curve at 5 K reached an unprecedented 5.3 T among hexagonal Mn3X systems. Our results provide direct experimental evidence of an electronic topological transition in the chiral AFMs. The temperature was demonstrated to play an efficient role in tuning the carrier concentration, which could be quantitatively determined by the two-band model. The electronic band structure crosses the Fermi energy level and leads to the reversal of carrier type around 50 K. The results not only offer new functionality for effectively modulating the Fermi level location in topological Weyl semimetals but also present a promising route of manipulating the carrier concentration in antiferromagnetic spintronic devices.
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| GB/T 7714 | Wang Xiaolei , Pan Dong , Zeng Qingqi et al. Robust anomalous Hall effect and temperature-driven Lifshitz transition in Weyl semimetal Mn3Ge. [J]. | Nanoscale , 2021 , 13 (4) : 2601-2608 . |
| MLA | Wang Xiaolei et al. "Robust anomalous Hall effect and temperature-driven Lifshitz transition in Weyl semimetal Mn3Ge." . | Nanoscale 13 . 4 (2021) : 2601-2608 . |
| APA | Wang Xiaolei , Pan Dong , Zeng Qingqi , Chen Xue , Wang Hailong , Zhao Duo et al. Robust anomalous Hall effect and temperature-driven Lifshitz transition in Weyl semimetal Mn3Ge. . | Nanoscale , 2021 , 13 (4) , 2601-2608 . |
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Abstract ：
Hall-effect in semiconductors has wide applications for magnetic field sensing. Yet, a standard Hall sensor retains two problems: its linearity is affected by the non-uniformity of the current distribution; the sensitivity is bias-dependent, with linearity decreasing with increasing bias current. In order to improve the performance, we here propose a novel structure which realizes bias-free, photo-induced Hall sensors. The system consists of a semi-transparent metal Pt and a semiconductor Si or GaAs to form a Schottky contact. We systematically compared the photo-induced Schottky behaviors and Hall effects without net current flowing, depending on various magnetic fields, light intensities and wavelengths of Pt/GaAs and Pt/Si junctions. The electrical characteristics of the Schottky photo-diodes were fitted to obtain the barrier height as a function of light intensity. We show that the open-circuit Hall voltage of Pt/GaAs junction is orders of magnitude lower than that of Pt/Si, and the barrier height of GaAs is smaller. It should be attributed to the surface states in GaAs which block the carrier drifting. This work not only realizes the physical investigations of photo-induced Hall effects in Pt/GaAs and Pt/Si Schottky junctions, but also opens a new pathway for bias-free magnetic sensing with high linearity and sensitivity comparing to commercial Hall-sensors.
Keyword ：
photo-induced Hall effect photo-induced Hall effect Schottky junction Schottky junction barrier height barrier height magnetic sensor magnetic sensor
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| GB/T 7714 | Wang Xiaolei , Sun Xupeng , Cui Shuainan et al. Physical Investigations on Bias-Free, Photo-Induced Hall Sensors Based on Pt/GaAs and Pt/Si Schottky Junctions. [J]. | Sensors , 2021 , 21 (9) . |
| MLA | Wang Xiaolei et al. "Physical Investigations on Bias-Free, Photo-Induced Hall Sensors Based on Pt/GaAs and Pt/Si Schottky Junctions." . | Sensors 21 . 9 (2021) . |
| APA | Wang Xiaolei , Sun Xupeng , Cui Shuainan , Yang Qianqian , Zhai Tianrui , Zhao Jinliang et al. Physical Investigations on Bias-Free, Photo-Induced Hall Sensors Based on Pt/GaAs and Pt/Si Schottky Junctions. . | Sensors , 2021 , 21 (9) . |
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Abstract ：
An ultrathin-film microring laser was fabricated using inkjet printing and a simple lift-off technique. Whispering-gallery-mode lasing was observed under optically pumped conditions in the film. The freestanding laser can be transferred to arbitrary surfaces for multifunctional applications, such as acoustic and relative humidity sensing. Using the first eigenmode of a membrane vibration, an acoustic sensor with a 0.15 Pa limit of detection was demonstrated via laser bandwidth broadening. A relative humidity sensor with a 1.1% limit of detection via wavelength shifts was demonstrated by placing the device on an optical fiber facet. These cost-effective, transferrable, multifunctional laser sensors will have many additional applications.
Keyword ：
humidity sensing humidity sensing microring laser microring laser acoustic sensing acoustic sensing ultrathin ultrathin transferrable transferrable
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| GB/T 7714 | Xu Zhiyang , Zhai Tianrui , Shi Xiaoyu et al. Multifunctional Sensing Based on an Ultrathin Transferrable Microring Laser. [J]. | ACS applied materials & interfaces , 2021 , 13 (16) : 19324-19331 . |
| MLA | Xu Zhiyang et al. "Multifunctional Sensing Based on an Ultrathin Transferrable Microring Laser." . | ACS applied materials & interfaces 13 . 16 (2021) : 19324-19331 . |
| APA | Xu Zhiyang , Zhai Tianrui , Shi Xiaoyu , Tong Junhua , Wang Xiaolei , Deng Jinxiang . Multifunctional Sensing Based on an Ultrathin Transferrable Microring Laser. . | ACS applied materials & interfaces , 2021 , 13 (16) , 19324-19331 . |
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Abstract ：
Lateral effect photodiodes sense the position of a laser beam by measuring the change of current between opposite anodes and a common cathode. They either require a bias current or the current is photogenerated. In either case, their linearity is affected by the non-uniformity of the current distribution between the anodes. We here propose a bias-free, lateral photo-diode, which consists of a resistive layer forming an extended Schottky contact to an intrinsic semiconductor. In our sensor, the photo-generated carriers do not diffuse laterally. Rather, their localization under the laser-beam results in a reduction of the barrier height due to image force effect. An open-circuit voltage appears between two opposite electrodes that is linear with the laser-beam position. A tetra-lateral configuration, with four anodes at the edges of a square-shaped sensor, allows sensing in two dimensions. (c) 2021 Elsevier B.V. All rights reserved.
Keyword ：
Photo-detectors Photo-detectors Position sensing Position sensing Schottky junctions Schottky junctions Image force effect Image force effect
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| GB/T 7714 | Wang, Xiaolei , Sun, Xupeng , Zhai, Tianrui et al. A bias-free, lateral effect position sensor photo-detector [J]. | SENSORS AND ACTUATORS A-PHYSICAL , 2021 , 330 . |
| MLA | Wang, Xiaolei et al. "A bias-free, lateral effect position sensor photo-detector" . | SENSORS AND ACTUATORS A-PHYSICAL 330 (2021) . |
| APA | Wang, Xiaolei , Sun, Xupeng , Zhai, Tianrui , Yang, Qianqian , Cui, Shuainan , Zhang, Jie et al. A bias-free, lateral effect position sensor photo-detector . | SENSORS AND ACTUATORS A-PHYSICAL , 2021 , 330 . |
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