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学者姓名：张万荣
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Abstract ：
This letter proposes a novel electromagnetic (EM) optimization approach using adjoint-sensitivity-based multifeature surrogate for microwave filter design. The proposed technique aims to solve the EM optimization problem, in which the starting point is far from the design specifications. We propose to add feature sensitivities in multifeature surrogate modeling to achieve a more accurate surrogate compared with the existing methods without feature sensitivities. We also propose a new design objective function in feature space to further improve the efficiency of multifeature-assisted optimization. Two microwave filter examples are used to demonstrate the proposed technique.
Keyword ：
Passband Passband Microwave technology Microwave technology electromagnetic (EM) optimization electromagnetic (EM) optimization Adjoint feature sensitivity Adjoint feature sensitivity Microwave filters Microwave filters multifeature multifeature Optimization Optimization microwave filter microwave filter Microwave theory and techniques Microwave theory and techniques Sensitivity Sensitivity Feature extraction Feature extraction
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| GB/T 7714 | Na, Weicong , Liu, Ke , Zhang, Wanrong et al. Advanced EM Optimization Using Adjoint-Sensitivity-Based Multifeature Surrogate for Microwave Filter Design [J]. | IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS , 2023 . |
| MLA | Na, Weicong et al. "Advanced EM Optimization Using Adjoint-Sensitivity-Based Multifeature Surrogate for Microwave Filter Design" . | IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS (2023) . |
| APA | Na, Weicong , Liu, Ke , Zhang, Wanrong , Feng, Feng , Zhang, Jianan , Xie, Hongyun et al. Advanced EM Optimization Using Adjoint-Sensitivity-Based Multifeature Surrogate for Microwave Filter Design . | IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS , 2023 . |
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Abstract ：
In this article, different germanium (Ge) profile in SiGe base of SiGe/Si heterojunction phototransisitor (HPT) was analyzed and optimized to achieve high optical response in a wide spectral range of 400-1000 nm. A physical-based optical response model was developed considering the effect of Ge profile on the optical absorption and electrical amplification. The dependence of the optical absorption on the incident light wavelength in wide spectral range of 400-1000 nm also was discussed in this model. Three different Ge-distribution, including BOX, triangular and trapezoidal, and the total Ge-content in base were discussed to obtain the high optical responsivity and bandwidth in the wide spectral range based on the proposed model. The BOX Ge-distribution provide the maximum collector current and optical responsivity, meanwhile, the BOX Ge-distribution can achieve the 3-dB bandwidth close to the other two. The SiGe/Si HPT with BOX-Ge distribution and 0.16 total Ge-content were fabricated and achieved a better optical responsivity and bandwidth product, which presents well application potential in wide spectral range.
Keyword ：
Germanium (Ge) profile Germanium (Ge) profile wide spectral range wide spectral range high-response high-response SiGe/Si heterojunction phototransistor SiGe/Si heterojunction phototransistor
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| GB/T 7714 | Shen, Xiaoting , Xie, Hongyun , Han, Dong et al. Optimum Ge Profile Design for High-Response SiGe/Si Heterojunction Phototransistor Applicable in Wide Spectral Range of 400-1000 nm [J]. | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2023 , 71 (1) : 656-663 . |
| MLA | Shen, Xiaoting et al. "Optimum Ge Profile Design for High-Response SiGe/Si Heterojunction Phototransistor Applicable in Wide Spectral Range of 400-1000 nm" . | IEEE TRANSACTIONS ON ELECTRON DEVICES 71 . 1 (2023) : 656-663 . |
| APA | Shen, Xiaoting , Xie, Hongyun , Han, Dong , Ge, Yunpeng , Yang, Xiaoxiong , Xu, Zimai et al. Optimum Ge Profile Design for High-Response SiGe/Si Heterojunction Phototransistor Applicable in Wide Spectral Range of 400-1000 nm . | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2023 , 71 (1) , 656-663 . |
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Abstract ：
Based on a compact electro-opto-thermal model, thermally induced current bifurcation and drastically collapse of output optical power in vertical cavity surface emitting laser (VCSEL) arrays are studied. Taking a VCSEL array with two cells for example, the phenomenon of the current bifurcation and the behavior around the bifurcation point is studied and substantiated by experiments and simulations. With the aid of the electro-opto-thermal equivalent circuit of VCSEL arrays, the impact of series resistance and cell spacing on current bifurcation is investigated with respect to the temperature dependencies of bias current and output optical power. Additional ballasting resistance is helpful to eliminate current bifurcation at an expense of increasing the total quadratic power dissipation. Increasing cell spacing is helpful to alleviate thermal coupling effect and delay the current bifurcation. VCSEL arrays with proper design of additional ballasting resistance and increasing cell spacing can alleviate thermally induced current bifurcation and hence improve the total output optical power.
Keyword ：
vertical cavity surface emitting laser (VCSEL) arrays vertical cavity surface emitting laser (VCSEL) arrays Collapse of output optical power Collapse of output optical power thermally induced current bifurcation thermally induced current bifurcation electro-opto-thermal model electro-opto-thermal model
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| GB/T 7714 | Jin, Dongyue , Zhou, Yuxin , Guan, Baolu et al. Thermally Induced Current Bifurcation and Drastically Collapse of Output Optical Power in VCSEL Arrays [J]. | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2023 , 70 (12) : 6415-6420 . |
| MLA | Jin, Dongyue et al. "Thermally Induced Current Bifurcation and Drastically Collapse of Output Optical Power in VCSEL Arrays" . | IEEE TRANSACTIONS ON ELECTRON DEVICES 70 . 12 (2023) : 6415-6420 . |
| APA | Jin, Dongyue , Zhou, Yuxin , Guan, Baolu , Zhang, Wanrong , Xie, Hongyun , Na, Weicong . Thermally Induced Current Bifurcation and Drastically Collapse of Output Optical Power in VCSEL Arrays . | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2023 , 70 (12) , 6415-6420 . |
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Abstract ：
A novel CMOS active inductor (CAI) circuit topology is proposed. It consists of two identical gyrators, a voltage-controlled negative resistance cell (VCNRC) and a voltage-controlled current source (VCCS). And each gyrator is composed of a feedforward transistor, a feedback transistor, a cascaded transistor, a common-source (CS) transistor, and a feedback resistor. Moreover, these two gyrators are symmetric and form a differential structure. By above building blocks configuration and cooperation, the CAI can achieve following different performances. First, high quality factor (Q) can be achieved by a combination of the VCNRC, the cascaded transistors and the feedback resistors due to the decrease in the equivalent resistance losses; Secondly, high linearity can be realized by the additional CS transistors due to the compensation for the nonlinear drain current of the feedback transistors. Thirdly, mutually independent tuning of inductance (LCAI) and Q can be achieved by tuning three external bias voltage terminals respectively configured in the cascaded transistors, the VCNRC and the VCCS. The veri-fication results show that at the frequency of 2.0 GHz, the peak Q can be tuned from 555 to 2780 with a large tuning range of 400.9 %, while the LCAI can be maintained within a small variation of only 0.9 %; on the other hand, LCAI at 2.0 GHz can also be tuned from 158 nH to 212 nH while the Q value has a variation of only 4.2 %; moreover, the CAI also is demonstrated to have inductance linearity as high as +0.17 dBm, and occupies a compact effective area of 43 mu m x 52 mu m. In addition, the output noise voltage at 2 GHz is 3.1 nV/root Hz, and both LCAI and Q values also exhibit good robustness against process corner and temperature variations. These comprehensive results highlight the CAI excellent performances in terms of size, Q value, linearity, mutually tunability of LCAI and Q, noise performance as well as the robustness against process and temperature variations.
Keyword ：
Transistor Transistor Inductor Inductor Quality factor Quality factor Linearity Linearity Tunable inductance Tunable inductance
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| GB/T 7714 | Wang, Xiaoxue , Zhang, Wanrong , Na, Weicong et al. A novel CMOS active inductor with high quality factor, high linearity and mutually independent tuning of inductance and quality factor [J]. | MICROELECTRONICS JOURNAL , 2023 , 141 . |
| MLA | Wang, Xiaoxue et al. "A novel CMOS active inductor with high quality factor, high linearity and mutually independent tuning of inductance and quality factor" . | MICROELECTRONICS JOURNAL 141 (2023) . |
| APA | Wang, Xiaoxue , Zhang, Wanrong , Na, Weicong , Jin, Dongyue , Xie, Hongyun , Ren, Yangui et al. A novel CMOS active inductor with high quality factor, high linearity and mutually independent tuning of inductance and quality factor . | MICROELECTRONICS JOURNAL , 2023 , 141 . |
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Abstract ：
Artificial neural network (ANN) is a powerful technique in the microwave modeling area. The ANN structure adaptation in existing automated model generation (AMG) algorithms focuses on adjusting either the number of hidden layers or the number of hidden neurons, or adjusting both simultaneously but in a layer-by-layer manner. In this letter, a novel batch-adjustment algorithm for ANN structure adaptation is proposed to improve the ANN modeling efficiency. We introduce a cascaded multilayer ANN structure and propose a new training algorithm to train it. The ANN structure is automatically adjusted by adding or removing the redundant hidden layers in batch and makes a compromise between the number of hidden layers and the number of hidden neurons simultaneously. Compared to existing algorithms, our proposed algorithm is more flexible and efficient in ANN structure adaptation by performing fewer times of ANN training during the model development. Two microwave modeling examples are used to demonstrate the proposed algorithm.
Keyword ：
Artificial neural network (ANN) Artificial neural network (ANN) design automation design automation modeling modeling model structure adaptation model structure adaptation
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| GB/T 7714 | Na, Weicong , Liu, Ke , Zhang, Jianan et al. An Efficient Batch-Adjustment Algorithm for Artificial Neural Network Structure Adaptation and Applications to Microwave Modeling [J]. | IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS , 2023 , 33 (8) : 1107-1110 . |
| MLA | Na, Weicong et al. "An Efficient Batch-Adjustment Algorithm for Artificial Neural Network Structure Adaptation and Applications to Microwave Modeling" . | IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS 33 . 8 (2023) : 1107-1110 . |
| APA | Na, Weicong , Liu, Ke , Zhang, Jianan , Jin, Dongyue , Xie, Hongyun , Zhang, Wanrong . An Efficient Batch-Adjustment Algorithm for Artificial Neural Network Structure Adaptation and Applications to Microwave Modeling . | IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS , 2023 , 33 (8) , 1107-1110 . |
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Abstract ：
A novel SiGe/Si phototransistor with high figure of merit (FOM) of gain early voltage for optical communication was designed and fabricated in a standard 0.35-mu m BiCMOS process. A compound base consisting of a P-Si layer and a P -SiGe layer was designed to achieve a good optical response through relieving the negative influence induced by doped ion's mutual diffusion in device fabrication. The fabricated surface-illuminated SiGe/Si heterojunction phototransistor (HPT) was measured under 850-nm incident light with a variety of optical powers at 1-V collector bias. When the incident optical power was 2.29 mu W, the collector current reached 4.45 mu A. The maximum gain exceeded 6.925 with the dark current of about 100 pA. The FOM of gain* early voltage of the proposed SiGe/Si HPT can achieve 100.97. Its optical DC and RF responses under high light power were analyzed with a physically based simulation model, which considered the process effects of device fabrication detailed. The optical gain may promote to 13.3 but with the deteriorated output performance and a smaller early voltage. The maximum optical characteristic frequency may reach 17.6 GHz.
Keyword ：
photocurrent gain photocurrent gain 0.35-mu m BiCMOS technology 0.35-mu m BiCMOS technology SiGe/Si heterojunction phototransistor (HPT) SiGe/Si heterojunction phototransistor (HPT) early voltage early voltage
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| GB/T 7714 | Xie, Hongyun , Xiang, Yang , Sha, Yin et al. A SiGe/Si Phototransistor With High FOM of Gain* V-A Using 0.35-mu m BiCMOS Technology [J]. | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2022 , 69 (10) : 5612-5617 . |
| MLA | Xie, Hongyun et al. "A SiGe/Si Phototransistor With High FOM of Gain* V-A Using 0.35-mu m BiCMOS Technology" . | IEEE TRANSACTIONS ON ELECTRON DEVICES 69 . 10 (2022) : 5612-5617 . |
| APA | Xie, Hongyun , Xiang, Yang , Sha, Yin , Ji, Ruilang , Zhu, Fu , Shen, Xiaoting et al. A SiGe/Si Phototransistor With High FOM of Gain* V-A Using 0.35-mu m BiCMOS Technology . | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2022 , 69 (10) , 5612-5617 . |
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Abstract ：
Artificial neural network (ANN) model development for microwave components principally includes two parts of work, i.e., data sampling and model structure adaptation. In existing various ANN modeling methods, the model structure adaptation process mainly focuses on adjusting the number of neurons within each hidden layer of ANN while keeping the number of layers unchanged. To make the ANN modeling process more flexible and efficient, an automated multilayer neural network structure adaptation method with l(1) regularization is proposed in this letter. We propose a new ANN model structure combining multilayer perceptron (MLP) and additional connections between the output layer and each hidden layer/input layer. A new training scheme with l(1) regularization is proposed to automatically determine the final model structure with user-desired model accuracy. Using the proposed model structure adaptation method, both the number of layers and the number of neurons within each layer of the final ANN model can be adaptively determined to address different needs for different microwave modeling problems. The proposed method is demonstrated by two microwave filter modeling examples in which the model development process achieves a time saving of at least 40% over existing methods.
Keyword ：
design automation design automation modeling modeling model structure adaptation model structure adaptation Artificial neural network (ANN) Artificial neural network (ANN)
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| GB/T 7714 | Na, Weicong , Liu, Ke , Zhang, Wanrong et al. Automated Multilayer Neural Network Structure Adaptation Method With l(1) Regularization for Microwave Modeling [J]. | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS , 2022 , 32 (7) : 815-818 . |
| MLA | Na, Weicong et al. "Automated Multilayer Neural Network Structure Adaptation Method With l(1) Regularization for Microwave Modeling" . | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS 32 . 7 (2022) : 815-818 . |
| APA | Na, Weicong , Liu, Ke , Zhang, Wanrong , Feng, Feng , Xie, Hongyun , Jin, Dongyue . Automated Multilayer Neural Network Structure Adaptation Method With l(1) Regularization for Microwave Modeling . | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS , 2022 , 32 (7) , 815-818 . |
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Abstract ：
As one of the key components in the non-volatile full adder (NV-FA), spin transfer torque assisted voltagecontrolled magnetic anisotropy magnetic tunnel junction (STT assisted VCMA-MTJ) will possess superiordevelopment prospects in internet of things, artificial intelligence and other fields due to its fast switchingspeed, low power consumption and good stability. However, with the downscaling of magnetic tunnel junction(MTJ) and the improvement of chip integration, the effects of process deviation on the performances of MTJdevice as well as NV-FA circuit become more and more important. Based on the magnetization dynamics ofSTT assisted VCMA-MTJ, a new electrical model of STT assisted VCMA-MTJ, in which the effects of the filmgrowth variation and the etching variation are taken into account, is established to study the effects of theabove deviations on the performances of MTJ device and NV-FA circuit. It is shown that the MTJ state fails tobe switched under the free layer thickness deviation gtf >= 6% or the oxide layer thickness deviation gtox >= 0.7%. The sensing margin (SM) is reduced by 17.5% as the tunnel magnetoresistance ratio deviation b increasesto 30%. The writing error rate can be effectively reduced by increasing Vb1, and increasing Vb2 when writing '0'or reducing Vb2 when writing '1' in the NV-FA circuit. The output error rate can also be effectively reduced byincreasing the driving voltage of logical operation Vdd
Keyword ：
process deviation process deviation spin transfer torque spin transfer torque magnetic tunnel junction magnetic tunnel junction voltage controlled magnetic anisotropy magnetic voltage controlled magnetic anisotropy magnetic
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| GB/T 7714 | Jin Dong-Yue , Cao Lu-Ming , Wang You et al. Process deviation based electrical model of spin transfertorque assisted voltage controlled magnetic anisotropymagnetic tunnel junction and its application [J]. | ACTA PHYSICA SINICA , 2022 , 71 (10) . |
| MLA | Jin Dong-Yue et al. "Process deviation based electrical model of spin transfertorque assisted voltage controlled magnetic anisotropymagnetic tunnel junction and its application" . | ACTA PHYSICA SINICA 71 . 10 (2022) . |
| APA | Jin Dong-Yue , Cao Lu-Ming , Wang You , Jia Xiao-Xue , Pan Yong-An , Zhou Yu-Xin et al. Process deviation based electrical model of spin transfertorque assisted voltage controlled magnetic anisotropymagnetic tunnel junction and its application . | ACTA PHYSICA SINICA , 2022 , 71 (10) . |
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Abstract ：
This study investigates the thermal design of 2-D vertical-cavity surface-emitting laser (VCSEL) arrays for optical output power improvement. Considering the temperature dependencies of bias current, internal quantum efficiency, internal optical loss, and thermal resistance of each array cell, a compact electro-opto-thermal model of 2-D VCSEL arrays with linear power dissipation and quadratic power dissipation in each array cell is established to study the effects of array cell spacing and layout on the device performance. At the same time, the power dissipation mechanisms contributing to thermal rollover are also studied. It is found that the array cell spacing has a strong influence on the linear power dissipation, and the layout (such as hexagonal design) influences quadratic power dissipation obviously. With the careful design of array cell spacing and layout, both the temperature profile and the thermal resistance matrix of VCSEL arrays are improved, which is helpful to delay the onset of thermal rollover and hence enhance the optical output power. The simulation results are consistent with experimental results.
Keyword ：
Resistance Resistance Vertical cavity surface emitting lasers Vertical cavity surface emitting lasers Optical arrays Optical arrays power dissipation power dissipation Rollover Rollover Power dissipation Power dissipation Power generation Power generation thermal design thermal design Electro-opto-thermal model Electro-opto-thermal model thermal resistance matrix thermal resistance matrix Thermal resistance Thermal resistance vertical-cavity surface-emitting laser (VCSEL) arrays vertical-cavity surface-emitting laser (VCSEL) arrays
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| GB/T 7714 | Jin, Dongyue , Yang, Shaomeng , Zhang, Feng et al. Thermal Design of VCSEL Arrays for Optical Output Power Improvement [J]. | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2022 , 69 (7) : 3761-3767 . |
| MLA | Jin, Dongyue et al. "Thermal Design of VCSEL Arrays for Optical Output Power Improvement" . | IEEE TRANSACTIONS ON ELECTRON DEVICES 69 . 7 (2022) : 3761-3767 . |
| APA | Jin, Dongyue , Yang, Shaomeng , Zhang, Feng , Wu, Ling , Guan, Baolu , Yang, Yingqi et al. Thermal Design of VCSEL Arrays for Optical Output Power Improvement . | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2022 , 69 (7) , 3761-3767 . |
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Abstract ：
Fast switching speed, low power consumption, and good stability are some of the important properties of spin transfer torque assisted voltage controlled magnetic anisotropy magnetic tunnel junction (STT-assisted VCMA-MTJ) which makes the non-volatile full adder (NV-FA) based on it attractive for Internet of Things. However, the effects of process variations on the performances of STT-assisted VCMA-MTJ and NVFA will be more and more obvious with the downscaling of STT-assisted VCMA-MTJ and the improvement of chip integration. In this paper, a more accurate electrical model of STT-assisted VCMA-MTJ is established on the basis of the magnetization dynamics and the process variations in film growth process and etching process. In particular, the write voltage is reduced to 0.7 V as the film thickness is reduced to 0.9 nm. The effects of free layer thickness variation (gamma(tf)) and oxide layer thickness variation (gamma(tox)) on the state switching as well as the effect of tunnel magnetoresistance ratio variation (beta) on the sensing margin (SM) are studied in detail. Considering that the above process variations follow Gaussian distribution, Monte Carlo simulation is used to study the effects of the process variations on the writing and output operations of NV-FA. The result shows that the state of STT-assisted VCMA-MTJ can be switched under -0.3% <= gamma(tf) <= 6% or -23% <= gamma(tox) <= 0.2%. SM is reduced by 16.0% with beta increases from 0 to 30%. The error rates of writing '0' in the NV-FA can be reduced by increasing V-b1 or increasing positive V-b2. The error rates of writing '1' can be reduced by increasing V-b1 or decreasing negative V-b2. The reduction of the output error rates can be realized effectively by increasing the driving voltage (V-dd).
Keyword ：
magnetic tunnel junction magnetic tunnel junction voltage controlled magnetic anisotropy voltage controlled magnetic anisotropy process variation process variation non-volatile full adder non-volatile full adder spin transfer torque spin transfer torque
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| GB/T 7714 | Jin, Dongyue , Cao, Luming , Wang, You et al. Process Variation Based Electrical Model of STT-Assisted VCMA-MTJ and Its Application in NV-FA [J]. | IEICE TRANSACTIONS ON ELECTRONICS , 2022 , E105C (11) : 704-711 . |
| MLA | Jin, Dongyue et al. "Process Variation Based Electrical Model of STT-Assisted VCMA-MTJ and Its Application in NV-FA" . | IEICE TRANSACTIONS ON ELECTRONICS E105C . 11 (2022) : 704-711 . |
| APA | Jin, Dongyue , Cao, Luming , Wang, You , Jia, Xiaoxue , Pan, Yongan , Zhou, Yuxin et al. Process Variation Based Electrical Model of STT-Assisted VCMA-MTJ and Its Application in NV-FA . | IEICE TRANSACTIONS ON ELECTRONICS , 2022 , E105C (11) , 704-711 . |
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