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学者姓名：徐晨
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| GB/T 7714 | Chen, Su , Xu, Chong , Li, Shuang . Earthquake Engineering Technology and Its Application [J]. | SUSTAINABILITY , 2024 , 16 (15) . |
| MLA | Chen, Su 等. "Earthquake Engineering Technology and Its Application" . | SUSTAINABILITY 16 . 15 (2024) . |
| APA | Chen, Su , Xu, Chong , Li, Shuang . Earthquake Engineering Technology and Its Application . | SUSTAINABILITY , 2024 , 16 (15) . |
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Abstract ：
热电堆红外探测器主要是由热电偶为基本单元所构成的一种探测器件,因其原理简单、工作时不需要冷却设备等优势已被广泛应用在生产生活的各个方面.然而,传统热电堆器件所选用材料的吸收率通常处在较低水平,并且大部分与微加工工艺不兼容.在此,本文设计提出了一种带有垂直石墨烯(vertical graphene,VG)的金属热电堆红外探测器.通过等离子体增强化学气相沉积(plasma enhanced chemical vapor deposition,PECVD)生长VG并将其保留在器件的热结处,从而实现热电堆红外探测器的宽带和高响应特性.这种复合结构的探测器在波长792 nm的情况下,室温响应率最高可达1.53 V/W,与没有VG的热电堆红外探测器相比,前后响应结果可增加28倍左右,响应时间缩短至0.8 ms左右.该制备过程与微加工工艺相兼容,同时整体提升了器件性能,并适合于大规模生产.此外,利用表面等离激元共振的原理将VG与金属纳米颗粒相互结合,发现在前后同等条件下材料的光吸收有明显的增强,所产生的热电势响应最高可增6倍.以上结果表明,VG在多种应用中具有巨大的潜力,包括光电检测、微发电装置等,该技术为制备高性能热电堆红外探测器和其他传感器件提供了一种新的途径.
Keyword ：
表面等离激元共振 表面等离激元共振 垂直石墨烯 垂直石墨烯 热电堆 热电堆 红外探测器 红外探测器
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| GB/T 7714 | 李凯 , 孙捷 , 杜在发 et al. 带有垂直石墨烯的金属热电堆红外探测器 [J]. | 物理学报 , 2023 , 72 (3) : 288-298 . |
| MLA | 李凯 et al. "带有垂直石墨烯的金属热电堆红外探测器" . | 物理学报 72 . 3 (2023) : 288-298 . |
| APA | 李凯 , 孙捷 , 杜在发 , 钱峰松 , 唐鹏昊 , 梅宇 et al. 带有垂直石墨烯的金属热电堆红外探测器 . | 物理学报 , 2023 , 72 (3) , 288-298 . |
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Abstract ：
The use of metal foil catalysts in the chemical vapor deposition of graphene films makes graphene transfer an ineluctable part of graphene device fabrication, which greatly limits industrialization. Here, an oxide phase-change material (V2O5) is found to have the same catalytic effect on graphene growth as conventional metals. A uniform large-area graphene film can be obtained on a 10 nm V2O5 film. Density functional theory is used to quantitatively analyze the catalytic effect of V2O5. Due to the high resistance property of V2O5 at room temperature, the obtained graphene can be directly used in devices with V2O5 as an intercalation layer. A wafer-scale graphene-V2O5-Si (GVS) Schottky photodetector array is successfully fabricated. When illuminated by a 792 nm laser, the responsivity of the photodetector can reach 266 mA W-1 at 0 V bias and 420 mA W-1 at 2 V. The transfer-free device fabrication process enables high feasibility for industrialization.
Keyword ：
graphene graphene phase-materials phase-materials density functional theory (DFT) calculations density functional theory (DFT) calculations in-suit growth in-suit growth
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| GB/T 7714 | Hu, Liangchen , Dong, Yibo , Xie, Yiyang et al. In Situ Growth of Graphene Catalyzed by a Phase-Change Material at 400 degrees C for Wafer-Scale Optoelectronic Device Application [J]. | SMALL , 2023 , 19 (14) . |
| MLA | Hu, Liangchen et al. "In Situ Growth of Graphene Catalyzed by a Phase-Change Material at 400 degrees C for Wafer-Scale Optoelectronic Device Application" . | SMALL 19 . 14 (2023) . |
| APA | Hu, Liangchen , Dong, Yibo , Xie, Yiyang , Qian, Fengsong , Chang, Pengying , Fan, Mengqi et al. In Situ Growth of Graphene Catalyzed by a Phase-Change Material at 400 degrees C for Wafer-Scale Optoelectronic Device Application . | SMALL , 2023 , 19 (14) . |
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Abstract ：
Direct chemical vapor deposition of graphene on semiconductors and insulators provides high feasibility for integration of graphene devices and semiconductor electronics. However, the current methods typically rely on high temperatures (>1000 degrees C), which can damage the substrates. Here, a growth method for high-quality large-area graphene at 300 degrees C is introduced. A multizone furnace with gradient temperature control was designed according to a computational fluid dynamics model. The crucial roles of the chamber pressure in the film continuity and hydrogen composition in the graphene defect density at low temperature were revealed. As a result, a uniform graphene film with the Raman ratio ID/IG = 0.08 was obtained. Furthermore, a technique of laminating single-crystal Cu foil as a sacrificial layer on the substrate was proposed to realize transfer-free growth, and a wafer-scale graphene transistor array was demonstrated with good performance consistency, which paves the way for mass fabrication of graphene devices.
Keyword ：
wafer scale wafer scale transistor array transistor array low temperature low temperature growth growth graphene graphene gradient temperature gradient temperature transfer-free transfer-free
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| GB/T 7714 | Qian, Fengsong , Deng, Jun , Dong, Yibo et al. Transfer-Free CVD Growth of High-Quality Wafer-Scale Graphene at 300 degrees C for Device Mass Fabrication [J]. | ACS APPLIED MATERIALS & INTERFACES , 2022 , 14 (47) : 53174-53182 . |
| MLA | Qian, Fengsong et al. "Transfer-Free CVD Growth of High-Quality Wafer-Scale Graphene at 300 degrees C for Device Mass Fabrication" . | ACS APPLIED MATERIALS & INTERFACES 14 . 47 (2022) : 53174-53182 . |
| APA | Qian, Fengsong , Deng, Jun , Dong, Yibo , Xu, Chen , Hu, Liangchen , Fu, Guosheng et al. Transfer-Free CVD Growth of High-Quality Wafer-Scale Graphene at 300 degrees C for Device Mass Fabrication . | ACS APPLIED MATERIALS & INTERFACES , 2022 , 14 (47) , 53174-53182 . |
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Abstract ：
The work introduces a localized surface plasmon resonance (LSPR) sensor chip integrated with vertical-cavity surface-emitting lasers (VCSELs). Using VCSEL as the light source, the hexagonal gold nanoparticle array was integrated with anodic aluminum oxide (AAO) as the mask on the light-emitting end face. The sensitivity sensing test of the refractive index solution was realized, combined with microfluidic technology. At the same time, the finite-difference time- domain (FDTD) algorithm was applied to model and simulate the gold nanostructures. The experimental results showed that the output power of the sensor was related to the refractive index of the sucrose solution. The maximum sensitivity of the sensor was 1.65 x 10(6) nW/RIU, which gives it great application potential in the field of biomolecular detection.
Keyword ：
anodic aluminum oxide film anodic aluminum oxide film localized surface plasmon resonance (LSPR) localized surface plasmon resonance (LSPR) microfluidic microfluidic sensor sensor VCSEL VCSEL
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| GB/T 7714 | Cao, Fang , Zhao, Xupeng , Lv, Xiaoqing et al. An LSPR Sensor Integrated with VCSEL and Microfluidic Chip [J]. | NANOMATERIALS , 2022 , 12 (15) . |
| MLA | Cao, Fang et al. "An LSPR Sensor Integrated with VCSEL and Microfluidic Chip" . | NANOMATERIALS 12 . 15 (2022) . |
| APA | Cao, Fang , Zhao, Xupeng , Lv, Xiaoqing , Hu, Liangchen , Jiang, Wenhui , Yang, Feng et al. An LSPR Sensor Integrated with VCSEL and Microfluidic Chip . | NANOMATERIALS , 2022 , 12 (15) . |
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Abstract ：
In the information display field, micro-light-emitting diodes (micro-LEDs) possess high potentials and they are expected to lead the direction of developing the next-generation new display technologies. Their display performances are superior to those produced by the currently prevailing liquid crystal and organic light-emitting diode based technologies. However, the micro-LED pixels and their driving circuits are often fabricated on different wafers, which implies that the so-called mass transfer seems to be inevitable, thus facing an obvious bottleneck. In this paper, the emerging graphene field effect transistors are used as the driving elements and integrated onto the GaN micro-LEDs, which is because the pixels and drivers are prepared directly on the same wafer, the technical problem of mass transfer is fundamentally bypassed. Furthermore, in traditional lithographic process, the ultraviolet photoresist directly contacts the graphene, which introduces severe carrier doping, thereby leading to deteriorated graphene transistor properties. This, not surprisingly, further translates into lower performances of the integrated devices. In the present work, proposed is a technique in which the polymethyl methacrylate (PMMA) thin films act as both the protection layers and the interlayers when optimizing the graphene field effect transistor processing. The PMMA layers are sandwiched between the graphene and the ultraviolet photoresist, which is a brand new device fabrication process. First, the new process is tested in discrete graphene field effect transistors. Compared with those devices that are processed without the PMMA protection thin films, the graphene devices fabricated with the new technology typically show their Dirac point at a gate voltage (V-g) deviation from V-g = 0, that is, 22 V lower than their counterparts. In addition, an increase in the carrier mobility of 32% is also observed. Finally, after applying the newly developed fabrication process to the pixel-and-driver integrated devices, it is found that their performances are improved significantly. With this new technique, the ultraviolet photoresist no longer directly contacts the sensitive graphene channel because of the PMMA protection. The doping effect and the performance dropping are dramatically reduced. The technique is facile and cheap, and it is also applicable to two-dimensional materials besides graphene, such as MoS2 and h-BN. It is hoped that it is of some value for device engineers working in this field.
Keyword ：
micro-light emitting diode micro-light emitting diode polymethyl methacrylate polymethyl methacrylate graphene graphene gallium nitride gallium nitride
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| GB/T 7714 | Yuan Ying-Kuo , Guo Wei-Ling , Du Zai-Fa et al. Applications of graphene transistor optimized fabrication process in monolithic integrated driving gallium nitride micro-light-emitting diode [J]. | ACTA PHYSICA SINICA , 2021 , 70 (19) . |
| MLA | Yuan Ying-Kuo et al. "Applications of graphene transistor optimized fabrication process in monolithic integrated driving gallium nitride micro-light-emitting diode" . | ACTA PHYSICA SINICA 70 . 19 (2021) . |
| APA | Yuan Ying-Kuo , Guo Wei-Ling , Du Zai-Fa , Qian Feng-Song , Liu Ming , Wang Le et al. Applications of graphene transistor optimized fabrication process in monolithic integrated driving gallium nitride micro-light-emitting diode . | ACTA PHYSICA SINICA , 2021 , 70 (19) . |
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Abstract ：
本发明公开了一种图形化生长垂直取向石墨烯的方法，该方法包括如下步骤：在衬底上光刻出所需要的垂直取向石墨烯的图形；依次沉积氧化物牺牲层和金属牺牲层；通过超声进行剥离，使图形区域的衬底显露出来，而非图形区域被氧化物/金属双牺牲层覆盖；使用等离子增强化学气相沉积技术生长垂直取向石墨烯；牺牲层在垂直取向石墨烯生长结束后脱离衬底，用氮气将牺牲层残留物吹净。本发明采用氧化物/金属双牺牲层的方法减少了后续的光刻、刻蚀等工艺对垂直取向石墨烯造成的沾污与破损，且图形化精细度高，具有重要的应用价值。
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| GB/T 7714 | 徐晨 , 钱峰松 , 邓军 et al. 一种图形化生长垂直取向石墨烯的方法 : CN202110501774.2[P]. | 2021-05-08 . |
| MLA | 徐晨 et al. "一种图形化生长垂直取向石墨烯的方法" : CN202110501774.2. | 2021-05-08 . |
| APA | 徐晨 , 钱峰松 , 邓军 , 解意洋 , 王秋华 , 胡良辰 . 一种图形化生长垂直取向石墨烯的方法 : CN202110501774.2. | 2021-05-08 . |
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Abstract ：
We investigated the frequency noise coupling mechanism of a 2 μm polarizationmaintaining single frequency fiber laser (SFFL) theoretically and experimentally. The coupling of pump's relative intensity noise (RIN) to frequency noise of a single-frequency high-gain silica fiber laser is shown experimentally to be consistent with a theoretical model where thermal expansion and thermo-optic effect mediate the coupling. The measured and theoretical frequency noise of the 2 μm SFFL with three pump sources is compared. We find using a 1550 nm single frequency laser pump source produces the lowest frequency noise, less than 100 Hz/ √Hz at frequencies higher than 100 Hz. © 2021 Optical Society of America.
Keyword ：
Silica Silica Pumping (laser) Pumping (laser) Thermal expansion Thermal expansion Fiber lasers Fiber lasers
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| GB/T 7714 | ZHANG, QIAN , HOU, YUBIN , SONG, WEIHUA et al. Pump RIN coupling to frequency noise of a polarization-maintaining 2 μm single frequency fiber laser [J]. | Optics Express , 2021 , 29 (3) : 3221-3229 . |
| MLA | ZHANG, QIAN et al. "Pump RIN coupling to frequency noise of a polarization-maintaining 2 μm single frequency fiber laser" . | Optics Express 29 . 3 (2021) : 3221-3229 . |
| APA | ZHANG, QIAN , HOU, YUBIN , SONG, WEIHUA , WANG, XI , BLAIR, CARL , CHEN, XU et al. Pump RIN coupling to frequency noise of a polarization-maintaining 2 μm single frequency fiber laser . | Optics Express , 2021 , 29 (3) , 3221-3229 . |
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Abstract ：
Vertical-cavity surface-emitting lasers (VCSELs) play a key role in the development of the next generation of optoelectronic technologies, thanks to their unique characteristics, such as low-power consumption, circular beam profile, high modulation speed, and large-scale twodimensional array. Dynamic phase manipulation of VCSELs within a compact system is highly desired for a large variety of applications. In this work, we incorporate the emerging microfluidic technologies into the conventional VCSELs through a monolithic integration approach, enabling dynamic phase control of lasing emissions with low power consumption and low thermal generation. As a proof of concept, a beam steering device is experimentally demonstrated by integrating microfluidic channel on a coherently coupled VCSELs array. Experimental results show that the deflection angles of the laser beam from the chip can be tuned from 0 to 2.41 under the injection of liquids with different refractive index into the microchannel. This work opens an entirely new solution to implement a compact laser system with real-Time wavefront controllability. It holds great potentials in various applications, including optical fiber communications, laser printing, optical sensing, directional displays, ultra-compact light detection and ranging (LiDAR). © 2021 OSA - The Optical Society. All rights reserved.
Keyword ：
Refractive index Refractive index Optical fiber communication Optical fiber communication Optical radar Optical radar Surface emitting lasers Surface emitting lasers Electric power utilization Electric power utilization Optical fibers Optical fibers Transceivers Transceivers Fluidic devices Fluidic devices Microfluidics Microfluidics Laser pulses Laser pulses
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| GB/T 7714 | Zhao, Zhuangzhuang , Xie, Yiyang , Pan, Guanzhong et al. Dynamic phase manipulation of vertical-cavity surface-emitting lasers via on-chip integration of microfluidic channels [J]. | Optics Express , 2021 , 29 (2) : 1481-1491 . |
| MLA | Zhao, Zhuangzhuang et al. "Dynamic phase manipulation of vertical-cavity surface-emitting lasers via on-chip integration of microfluidic channels" . | Optics Express 29 . 2 (2021) : 1481-1491 . |
| APA | Zhao, Zhuangzhuang , Xie, Yiyang , Pan, Guanzhong , Ni, Peinan , Wang, Qiuhua , Dong, Yibo et al. Dynamic phase manipulation of vertical-cavity surface-emitting lasers via on-chip integration of microfluidic channels . | Optics Express , 2021 , 29 (2) , 1481-1491 . |
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Abstract ：
We demonstrated an ultra-low noise polarization-maintaining (PM) single frequency fiber laser (SFFL) at 2 mu m. By suppressing the pump relative intensity noise using a feedback loop control, the RIN and frequency noise of the SFFL are simultaneously reduced, and the reduction is about 3 - 15 dB and 3 - 8.4 dB, respectively. After two stage Tm3+-doped PM fiber amplifier, the output power reached about 5.2 W. Meanwhile, the frequency noise almost has no increases, which is still below 100 Hz/root Hz after 13 Hz. And the frequency-tunable range is approximately 2 GHz with frequency response of 46 MHz/V.
Keyword ：
single frequency single frequency fiber laser fiber laser relative intensity noise relative intensity noise frequency noise frequency noise
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| GB/T 7714 | Zhang, Qian , Hou, Yubin , Song, Weihua et al. 2 mu m ultra-low relative intensity noise and frequency noise of single frequency fiber laser for next-generation gravitational wave detectors [C] . 2021 . |
| MLA | Zhang, Qian et al. "2 mu m ultra-low relative intensity noise and frequency noise of single frequency fiber laser for next-generation gravitational wave detectors" . (2021) . |
| APA | Zhang, Qian , Hou, Yubin , Song, Weihua , Wang, Xi , Peng, Zhigang , Chen, Xu et al. 2 mu m ultra-low relative intensity noise and frequency noise of single frequency fiber laser for next-generation gravitational wave detectors . (2021) . |
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