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学者姓名：徐晨
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Abstract ：
The use of metal foil catalysts in the chemical vapor deposition of graphene films makes graphene transfer an ineluctable part of graphene device fabrication, which greatly limits industrialization. Here, an oxide phase-change material (V2O5) is found to have the same catalytic effect on graphene growth as conventional metals. A uniform large-area graphene film can be obtained on a 10 nm V2O5 film. Density functional theory is used to quantitatively analyze the catalytic effect of V2O5. Due to the high resistance property of V2O5 at room temperature, the obtained graphene can be directly used in devices with V2O5 as an intercalation layer. A wafer-scale graphene-V2O5-Si (GVS) Schottky photodetector array is successfully fabricated. When illuminated by a 792 nm laser, the responsivity of the photodetector can reach 266 mA W-1 at 0 V bias and 420 mA W-1 at 2 V. The transfer-free device fabrication process enables high feasibility for industrialization.
Keyword ：
graphene graphene phase-materials phase-materials density functional theory (DFT) calculations density functional theory (DFT) calculations in-suit growth in-suit growth
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| GB/T 7714 | Hu, Liangchen , Dong, Yibo , Xie, Yiyang et al. In Situ Growth of Graphene Catalyzed by a Phase-Change Material at 400 degrees C for Wafer-Scale Optoelectronic Device Application [J]. | SMALL , 2023 , 19 (14) . |
| MLA | Hu, Liangchen et al. "In Situ Growth of Graphene Catalyzed by a Phase-Change Material at 400 degrees C for Wafer-Scale Optoelectronic Device Application" . | SMALL 19 . 14 (2023) . |
| APA | Hu, Liangchen , Dong, Yibo , Xie, Yiyang , Qian, Fengsong , Chang, Pengying , Fan, Mengqi et al. In Situ Growth of Graphene Catalyzed by a Phase-Change Material at 400 degrees C for Wafer-Scale Optoelectronic Device Application . | SMALL , 2023 , 19 (14) . |
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Abstract ：
The work introduces a localized surface plasmon resonance (LSPR) sensor chip integrated with vertical-cavity surface-emitting lasers (VCSELs). Using VCSEL as the light source, the hexagonal gold nanoparticle array was integrated with anodic aluminum oxide (AAO) as the mask on the light-emitting end face. The sensitivity sensing test of the refractive index solution was realized, combined with microfluidic technology. At the same time, the finite-difference time- domain (FDTD) algorithm was applied to model and simulate the gold nanostructures. The experimental results showed that the output power of the sensor was related to the refractive index of the sucrose solution. The maximum sensitivity of the sensor was 1.65 x 10(6) nW/RIU, which gives it great application potential in the field of biomolecular detection.
Keyword ：
anodic aluminum oxide film anodic aluminum oxide film localized surface plasmon resonance (LSPR) localized surface plasmon resonance (LSPR) microfluidic microfluidic sensor sensor VCSEL VCSEL
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| GB/T 7714 | Cao, Fang , Zhao, Xupeng , Lv, Xiaoqing et al. An LSPR Sensor Integrated with VCSEL and Microfluidic Chip [J]. | NANOMATERIALS , 2022 , 12 (15) . |
| MLA | Cao, Fang et al. "An LSPR Sensor Integrated with VCSEL and Microfluidic Chip" . | NANOMATERIALS 12 . 15 (2022) . |
| APA | Cao, Fang , Zhao, Xupeng , Lv, Xiaoqing , Hu, Liangchen , Jiang, Wenhui , Yang, Feng et al. An LSPR Sensor Integrated with VCSEL and Microfluidic Chip . | NANOMATERIALS , 2022 , 12 (15) . |
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Abstract ：
Direct chemical vapor deposition of graphene on semiconductors and insulators provides high feasibility for integration of graphene devices and semiconductor electronics. However, the current methods typically rely on high temperatures (>1000 degrees C), which can damage the substrates. Here, a growth method for high-quality large-area graphene at 300 degrees C is introduced. A multizone furnace with gradient temperature control was designed according to a computational fluid dynamics model. The crucial roles of the chamber pressure in the film continuity and hydrogen composition in the graphene defect density at low temperature were revealed. As a result, a uniform graphene film with the Raman ratio ID/IG = 0.08 was obtained. Furthermore, a technique of laminating single-crystal Cu foil as a sacrificial layer on the substrate was proposed to realize transfer-free growth, and a wafer-scale graphene transistor array was demonstrated with good performance consistency, which paves the way for mass fabrication of graphene devices.
Keyword ：
wafer scale wafer scale transistor array transistor array low temperature low temperature growth growth graphene graphene gradient temperature gradient temperature transfer-free transfer-free
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| GB/T 7714 | Qian, Fengsong , Deng, Jun , Dong, Yibo et al. Transfer-Free CVD Growth of High-Quality Wafer-Scale Graphene at 300 degrees C for Device Mass Fabrication [J]. | ACS APPLIED MATERIALS & INTERFACES , 2022 , 14 (47) : 53174-53182 . |
| MLA | Qian, Fengsong et al. "Transfer-Free CVD Growth of High-Quality Wafer-Scale Graphene at 300 degrees C for Device Mass Fabrication" . | ACS APPLIED MATERIALS & INTERFACES 14 . 47 (2022) : 53174-53182 . |
| APA | Qian, Fengsong , Deng, Jun , Dong, Yibo , Xu, Chen , Hu, Liangchen , Fu, Guosheng et al. Transfer-Free CVD Growth of High-Quality Wafer-Scale Graphene at 300 degrees C for Device Mass Fabrication . | ACS APPLIED MATERIALS & INTERFACES , 2022 , 14 (47) , 53174-53182 . |
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Abstract ：
Text generation with sentiment control is difficult without fine-tuning or modifying the model architecture. Plug and Play Language Model (PPLM) utilizes an external sentiment classifier to update the hidden states of GPT-2 at each time step. It does not change the parameters but achieves competitive performance. However, fluency is impaired due to the instability of the hidden states. Moreover, the classifier is not strong because of the way it is trained with partial texts, hence it is difficult to guide the generation in the process. To solve the above problems, in this paper, we first propose a fixed threshold method based on the Valence-Arousal-Dominance (VAD) lexicon to decide whether to change a word, which keeps the fluency of the original LM to the greatest extent. Furthermore, for the improvement of sentiment alignment, we propose a dynamic threshold method that utilizes VAD-based loss to make the threshold dynamic. Experiments demonstrate that our methods outperform the baseline with a great margin significantly both on fluency and sentiment accuracy.
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| GB/T 7714 | Xu, Chen , Zhao, Jianyu , Li, Rang et al. Change or Not: A Simple Approach for Plug and Play Language Models on Sentiment Control [C] . 2021 : 15935-15936 . |
| MLA | Xu, Chen et al. "Change or Not: A Simple Approach for Plug and Play Language Models on Sentiment Control" . (2021) : 15935-15936 . |
| APA | Xu, Chen , Zhao, Jianyu , Li, Rang , Hu, Changjian , Xiao, Chuangbai . Change or Not: A Simple Approach for Plug and Play Language Models on Sentiment Control . (2021) : 15935-15936 . |
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Abstract ：
In this paper, an auxiliary-model method is proposed for calculating equivalent input seismic loads in research of ground motions. This method can be used to investigate the local effect of 3D complex sites subjected to obliquely incident SV and P waves. Using this method, we build a fictitious auxiliary model along the normal direction of the boundary of the area of interest, with the model's localized geological features remaining the same along a vector normal to this boundary. This model is divided into five independent auxiliary models, which are then dynamically analyzed to obtain the equivalent input seismic loads. Unlike traditional methods, in this new technique, the mechanical behavior of the auxiliary model can be nonlinear, and its geometry can be arbitrary. In addition, a detailed description of the steps to calculate the equivalent input seismic loads is given. Numerical examples of incident plane-wave propagation at uniform sites with local features validate the effectiveness of this method. It is also applicable to elastic and non-elastic problems.
Keyword ：
seismic-wave input seismic-wave input free field motion free field motion topography effect topography effect oblique incidence oblique incidence equivalent input seismic load equivalent input seismic load
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| GB/T 7714 | Zhang, Xiaolong , Peng, Xiaobo , Li, Xiaojun et al. Three-Dimensional Seismic Response in Complex Site Conditions: A New Approach Based on an Auxiliary-Model Method [J]. | JOURNAL OF EARTH SCIENCE , 2021 , 32 (5) : 1152-1165 . |
| MLA | Zhang, Xiaolong et al. "Three-Dimensional Seismic Response in Complex Site Conditions: A New Approach Based on an Auxiliary-Model Method" . | JOURNAL OF EARTH SCIENCE 32 . 5 (2021) : 1152-1165 . |
| APA | Zhang, Xiaolong , Peng, Xiaobo , Li, Xiaojun , Zhou, Zhenghua , Xu, Chong , Dou, Zhan et al. Three-Dimensional Seismic Response in Complex Site Conditions: A New Approach Based on an Auxiliary-Model Method . | JOURNAL OF EARTH SCIENCE , 2021 , 32 (5) , 1152-1165 . |
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Abstract ：
We demonstrated an ultra-low noise polarization-maintaining (PM) single frequency fiber laser (SFFL) at 2 mu m. By suppressing the pump relative intensity noise using a feedback loop control, the RIN and frequency noise of the SFFL are simultaneously reduced, and the reduction is about 3 - 15 dB and 3 - 8.4 dB, respectively. After two stage Tm3+-doped PM fiber amplifier, the output power reached about 5.2 W. Meanwhile, the frequency noise almost has no increases, which is still below 100 Hz/root Hz after 13 Hz. And the frequency-tunable range is approximately 2 GHz with frequency response of 46 MHz/V.
Keyword ：
single frequency single frequency fiber laser fiber laser relative intensity noise relative intensity noise frequency noise frequency noise
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| GB/T 7714 | Zhang, Qian , Hou, Yubin , Song, Weihua et al. 2 mu m ultra-low relative intensity noise and frequency noise of single frequency fiber laser for next-generation gravitational wave detectors [C] . 2021 . |
| MLA | Zhang, Qian et al. "2 mu m ultra-low relative intensity noise and frequency noise of single frequency fiber laser for next-generation gravitational wave detectors" . (2021) . |
| APA | Zhang, Qian , Hou, Yubin , Song, Weihua , Wang, Xi , Peng, Zhigang , Chen, Xu et al. 2 mu m ultra-low relative intensity noise and frequency noise of single frequency fiber laser for next-generation gravitational wave detectors . (2021) . |
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Abstract ：
在显示领域,微型发光二极管(micro-LED)潜力巨大,有望引领下一代新型显示技术的发展方向,其显示性能在很多方面优于现有的液晶、有机发光二极管(OLED),但巨量的micro-LED像素点与驱动电路不在同一晶圆上制备,面临巨量转移的技术瓶颈.本文将新兴的石墨烯场效应晶体管作为驱动元件与氮化镓(GaN) micro-LED进行单片集成,因为二者直接制备于同一衬底上,所以从根源上规避了巨量转移的技术难题.此外,传统光刻工艺中紫外光刻胶直接接触石墨烯,会引入严重掺杂导致场效应晶体管性能较差,进而影响集成器件性能.本文提出了一种利用聚甲基丙烯酸甲酯(PMMA)薄膜作为保护层,直接旋涂紫外光刻胶进行...
Keyword ：
微型发光二极管 微型发光二极管 聚甲基丙烯酸甲酯 聚甲基丙烯酸甲酯 氮化镓 氮化镓 石墨烯 石墨烯
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| GB/T 7714 | 苑营阔 , 郭伟玲 , 杜在发 et al. 石墨烯晶体管优化制备工艺在单片集成驱动氮化镓微型发光二极管中的应用 [J]. | 物理学报 , 2021 , 70 (19) : 205-213 . |
| MLA | 苑营阔 et al. "石墨烯晶体管优化制备工艺在单片集成驱动氮化镓微型发光二极管中的应用" . | 物理学报 70 . 19 (2021) : 205-213 . |
| APA | 苑营阔 , 郭伟玲 , 杜在发 , 钱峰松 , 柳鸣 , 王乐 et al. 石墨烯晶体管优化制备工艺在单片集成驱动氮化镓微型发光二极管中的应用 . | 物理学报 , 2021 , 70 (19) , 205-213 . |
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Abstract ：
Graphene is an ideal material for wide spectrum detector owing to its special band structure, but its low light absorption and fast composite of photogenerated carriers lead to a weak response performance. In this paper, we designed a unique photoconductive graphene-InGaAs photodetector. The built-in electric field was formed between graphene and InGaAs, which can prolong the lifetime of photogenerated carriers and improve the response of devices by confining the holes. Compared with graphene-Si structure, a higher built-in electric field and reach to 0.54 eV is formed. It enables the device to achieve a responsivity of 60 AW(-1) and a photoconductive gain of 79.4 at 792 nm. In the 1550 nm communication band, the responsivity of the device is also greater than 10 AW(-1) and response speed is less than 2 ms. Meanwhile, the saturation phenomenon of light response was also found in this photoconductive graphene heterojunction detector during the experiment, we have explained the phenomenon by the capacitance theory of the built-in electric field, and the maximum optical responsivity of the detector is calculated theoretically, which is in good agreement with the measurement result. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
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| GB/T 7714 | Hu, Liangchen , Dong, Yibo , Deng, Jun et al. High responsivity graphene-InGaAs near-infrared photodetector realized by hole trapping and its response saturation mechanism [J]. | OPTICS EXPRESS , 2021 , 29 (15) : 23234-23243 . |
| MLA | Hu, Liangchen et al. "High responsivity graphene-InGaAs near-infrared photodetector realized by hole trapping and its response saturation mechanism" . | OPTICS EXPRESS 29 . 15 (2021) : 23234-23243 . |
| APA | Hu, Liangchen , Dong, Yibo , Deng, Jun , Xie, Yiyang , Ma, Xiaochen , Qian, Fengsong et al. High responsivity graphene-InGaAs near-infrared photodetector realized by hole trapping and its response saturation mechanism . | OPTICS EXPRESS , 2021 , 29 (15) , 23234-23243 . |
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Abstract ：
In existing flip-chip LED simulations, the light extraction efficiency is related to the multiple quantum well (MQW) to metal reflector distance because of optical interference. We calculate the contrast using several typical light intensity distributions among the several QWs in MQW. The coherence is obtained analytically. When the luminosity of each QW is equal, the contrast is similar to 0, meaning the light is incoherent, contrary to traditional studies. The spatial coherence is important only when the light emission comes from just one QW. As the MQW has a not negligible thickness, the traditional single-dipole model is no longer accurate. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
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| GB/T 7714 | Wang, Le , Sun, Jie , Yan, Qun et al. Issue of spatial coherence in MQW based micro-LED simulation [J]. | OPTICS EXPRESS , 2021 , 29 (20) : 31520-31526 . |
| MLA | Wang, Le et al. "Issue of spatial coherence in MQW based micro-LED simulation" . | OPTICS EXPRESS 29 . 20 (2021) : 31520-31526 . |
| APA | Wang, Le , Sun, Jie , Yan, Qun , Lin, Jiao , Guo, Weiling , Chen, Enguo et al. Issue of spatial coherence in MQW based micro-LED simulation . | OPTICS EXPRESS , 2021 , 29 (20) , 31520-31526 . |
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Abstract ：
In the information display field, micro-light-emitting diodes (micro-LEDs) possess high potentials and they are expected to lead the direction of developing the next-generation new display technologies. Their display performances are superior to those produced by the currently prevailing liquid crystal and organic light-emitting diode based technologies. However, the micro-LED pixels and their driving circuits are often fabricated on different wafers, which implies that the so-called mass transfer seems to be inevitable, thus facing an obvious bottleneck. In this paper, the emerging graphene field effect transistors are used as the driving elements and integrated onto the GaN micro-LEDs, which is because the pixels and drivers are prepared directly on the same wafer, the technical problem of mass transfer is fundamentally bypassed. Furthermore, in traditional lithographic process, the ultraviolet photoresist directly contacts the graphene, which introduces severe carrier doping, thereby leading to deteriorated graphene transistor properties. This, not surprisingly, further translates into lower performances of the integrated devices. In the present work, proposed is a technique in which the polymethyl methacrylate (PMMA) thin films act as both the protection layers and the interlayers when optimizing the graphene field effect transistor processing. The PMMA layers are sandwiched between the graphene and the ultraviolet photoresist, which is a brand new device fabrication process. First, the new process is tested in discrete graphene field effect transistors. Compared with those devices that are processed without the PMMA protection thin films, the graphene devices fabricated with the new technology typically show their Dirac point at a gate voltage (V-g) deviation from V-g = 0, that is, 22 V lower than their counterparts. In addition, an increase in the carrier mobility of 32% is also observed. Finally, after applying the newly developed fabrication process to the pixel-and-driver integrated devices, it is found that their performances are improved significantly. With this new technique, the ultraviolet photoresist no longer directly contacts the sensitive graphene channel because of the PMMA protection. The doping effect and the performance dropping are dramatically reduced. The technique is facile and cheap, and it is also applicable to two-dimensional materials besides graphene, such as MoS2 and h-BN. It is hoped that it is of some value for device engineers working in this field.
Keyword ：
micro-light emitting diode micro-light emitting diode polymethyl methacrylate polymethyl methacrylate graphene graphene gallium nitride gallium nitride
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| GB/T 7714 | Yuan Ying-Kuo , Guo Wei-Ling , Du Zai-Fa et al. Applications of graphene transistor optimized fabrication process in monolithic integrated driving gallium nitride micro-light-emitting diode [J]. | ACTA PHYSICA SINICA , 2021 , 70 (19) . |
| MLA | Yuan Ying-Kuo et al. "Applications of graphene transistor optimized fabrication process in monolithic integrated driving gallium nitride micro-light-emitting diode" . | ACTA PHYSICA SINICA 70 . 19 (2021) . |
| APA | Yuan Ying-Kuo , Guo Wei-Ling , Du Zai-Fa , Qian Feng-Song , Liu Ming , Wang Le et al. Applications of graphene transistor optimized fabrication process in monolithic integrated driving gallium nitride micro-light-emitting diode . | ACTA PHYSICA SINICA , 2021 , 70 (19) . |
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