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学者姓名：秦飞
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Abstract ：
Through-silicon via (TSV), as a key technology for realizing interconnections in three-dimensional integrated circuits (3D ICs), critically depends on the integrity of its sidewall interfaces to maintain optimal leakage characteristics. In this work, the temperature cycling experiments, incorporating leakage current I-V testing, microstructural observations are conducted, and the EDS elemental analysis is made to evaluate the effects of temperature cycling on the integrity of TSV sidewall interfaces and the leakage mechanisms in the insulation layer. The results indicate that as the number of temperature cycles increases, the alternating cyclic loads progressively degrade the integrity of the TSV barrier layer, transitioning from an intact interface to the formation of micro-voids and micro-cracks, which results in a significant increase in leakage current. When through-thickness cracks appear at the interface, a sudden decrease in leakage current occurs. The TSV failure mode is transforms from thermally induced leakage to mechanical cracking. The leakage mechanism of the insulation layer transforms from the Schottky emission mechanism (Cycle <= 60) into a combination of Schottky emission and Poole-Frenkel emission mechanisms (Cycle >= 90), and this transformation becomes more pronounced under high electric field conditions. Further analysis of TSV interface integrity reveals that thermomechanical stress induced by temperature cycling generates defects at the interface between the TSV copper fill and the barrier layer. As thermally induced defects accumulate, the barrier height of the insulation layer continuously decreases, making it easier for electrons in the metal to overcome the Schottky barrier under thermal and electric field excitation, thereby forming leakage currents. Moreover, these defects facilitate the diffusion of copper atoms into the insulation layer, thereby forming localized high electric field regions. These high-field regions in the insulation layer increase electron emission rates through the Poole-Frenkel emission mechanism, creating leakage paths. Therefore, copper diffusion emerges as one of the primary causes of dielectric performance degradation in the insulation layer.
Keyword ：
leakage mechanism leakage mechanism temperature cycling temperature cycling through silicon via through silicon via
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| GB/T 7714 | Ren, Yunkun , Chen, Si , Qin, Fei . Effects of temperature cycling on leakage mechanism of through-silicon via insulation layer [J]. | ACTA PHYSICA SINICA , 2025 , 74 (5) . |
| MLA | Ren, Yunkun 等. "Effects of temperature cycling on leakage mechanism of through-silicon via insulation layer" . | ACTA PHYSICA SINICA 74 . 5 (2025) . |
| APA | Ren, Yunkun , Chen, Si , Qin, Fei . Effects of temperature cycling on leakage mechanism of through-silicon via insulation layer . | ACTA PHYSICA SINICA , 2025 , 74 (5) . |
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Abstract ：
阐述ChatGPT在材料力学教学中的可能应用场景,从积极影响和消极风险两个方面论述在材料力学教学过程中使用ChatGPT的优势和制约因素,并对普通材料力学授课教师在未来教学过程中如何应对以ChatGPT为代表的人工智能技术提出观点和看法.
Keyword ：
ChatGPT ChatGPT 人工智能 人工智能 材料力学 材料力学
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| GB/T 7714 | 代岩伟 , 秦飞 . ChatGPT在材料力学教学中的应用前景和风险因素探讨 [J]. | 中国教育技术装备 , 2024 , (12) : 37-39 . |
| MLA | 代岩伟 等. "ChatGPT在材料力学教学中的应用前景和风险因素探讨" . | 中国教育技术装备 12 (2024) : 37-39 . |
| APA | 代岩伟 , 秦飞 . ChatGPT在材料力学教学中的应用前景和风险因素探讨 . | 中国教育技术装备 , 2024 , (12) , 37-39 . |
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Abstract ：
随着现代通信的不断进步和微电子产业的迅速发展,电子产品小型化和高密度化逐渐成为主流趋势,有源相控阵天线的收发组件,作为雷达重要组成部分和高温组件,其散热性能为目前雷达散热中研究的重点。本文以有源相控阵天线中以低温共烧陶瓷材料(LTCC)作为基板的收发组件散热为研究对象,通过在收发组件上方添加液冷散热的方式进行辅助散热,改善收发组件散热问题。通过COMSOL Multiphysics软件使用二维密度拓扑优化的方式,以压降与平均温度为优化目标获取流道几何模型、温度与流体特性结果,并于传统直通型流进行对比。结果表明拓扑优化后热源位置温度有较好的改善。
Keyword ：
LTCC LTCC T/R组件 T/R组件 拓扑优化 拓扑优化 微流道 微流道
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| GB/T 7714 | 杨光 , 秦飞 , 史戈 . 基于LTCC射频SiP组件微流道结构拓扑优化研究 [C] //北京力学会第30届学术年会 . 2024 . |
| MLA | 杨光 等. "基于LTCC射频SiP组件微流道结构拓扑优化研究" 北京力学会第30届学术年会 . (2024) . |
| APA | 杨光 , 秦飞 , 史戈 . 基于LTCC射频SiP组件微流道结构拓扑优化研究 北京力学会第30届学术年会 . (2024) . |
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Abstract ：
本文采用有限元方法对表面沉积不同厚度二氧化硅晶圆进行了数值仿真。晶圆表面沉积材料的初始残余应力影响晶圆的翘曲,然而由于测试精度和手段通常难以表征,本文基于数值反演方法获取测样品在沉积过程中的初始残余应力。仿真数据表明,随着二氧化硅厚度的增加,初始残余应力呈现下降的趋势。
Keyword ：
晶圆翘曲 晶圆翘曲 薄膜沉积 薄膜沉积 初始残余应力 初始残余应力
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| GB/T 7714 | 刘泓利 , 秦飞 , 代岩伟 et al. 二氧化硅/硅晶圆翘曲初始残余应力数值反演研究 [C] //北京力学会第30届学术年会 . 2024 . |
| MLA | 刘泓利 et al. "二氧化硅/硅晶圆翘曲初始残余应力数值反演研究" 北京力学会第30届学术年会 . (2024) . |
| APA | 刘泓利 , 秦飞 , 代岩伟 , 李晨光 . 二氧化硅/硅晶圆翘曲初始残余应力数值反演研究 北京力学会第30届学术年会 . (2024) . |
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Abstract ：
摩尔定律的发展速度放缓和集成电路产品应用的多元化趋势,共同推动了先进封装技术的快速发展.先进互连技术是先进封装的核心,在高速、高频传输、功耗、超细节距互连以及系统集成能力等方面均展现出显著优势.硅桥技术作为Chiplet以及异构集成封装的重要解决方案,可以以较低的成本实现多芯片间的局部高密度互连,在处理器、存储器、射频器件中被广泛应用.介绍了业界主流的硅桥技术,并对硅桥技术的结构特点和关键技术进行了分析和总结.深入讨论了硅桥技术的发展趋势及挑战,为相关领域的进一步发展提供参考.
Keyword ：
先进互连技术 先进互连技术 硅桥技术 硅桥技术 高密度互连 高密度互连 Chiplet Chiplet
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| GB/T 7714 | 赵瑾 , 于大全 , 秦飞 . 面向Chiplet集成的三维互连硅桥技术 [J]. | 电子与封装 , 2024 , 24 (6) : 1-13 . |
| MLA | 赵瑾 et al. "面向Chiplet集成的三维互连硅桥技术" . | 电子与封装 24 . 6 (2024) : 1-13 . |
| APA | 赵瑾 , 于大全 , 秦飞 . 面向Chiplet集成的三维互连硅桥技术 . | 电子与封装 , 2024 , 24 (6) , 1-13 . |
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Abstract ：
发展高可靠的互连封装新型焊料已经成为电子封装领域的前沿研究内容之一.本文制备了包镍碳纳米管增强SAC305焊料,并开展了不同含量增强SAC305焊料的双悬臂梁试样Ⅰ型断裂测试,得到了不同添加含量SAC305的载荷-位移曲线.基于柔度的梁方法理论(CBBM)计算了增强焊料的Ⅰ型断裂韧度.研究结果表明,其Ⅰ型断裂韧度随着包镍碳纳米管质量分数的增加,表现出先升高后降低的趋势.没有添加包镍碳纳米管的SAC305焊料的Ⅰ型断裂韧度约为0.53N/mm,添加0.05wt％包镍碳纳米管的增强焊料的Ⅰ型断裂韧度最高,约为1.14 N/mm,相较于没有添加包镍碳纳米管的SAC305焊料断裂韧度提高了 1.15倍,表现出更好的抵抗裂纹扩展的特性.
Keyword ：
断裂 断裂 包镍碳纳米管 包镍碳纳米管 双悬臂梁试样 双悬臂梁试样 能量释放率 能量释放率 SAC305焊料 SAC305焊料
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| GB/T 7714 | 张谋 , 秦飞 , 代岩伟 . 包镍多壁碳纳米管增强SAC305焊料的Ⅰ型断裂机理研究 [J]. | 微电子学与计算机 , 2023 , 40 (1) : 124-129 . |
| MLA | 张谋 et al. "包镍多壁碳纳米管增强SAC305焊料的Ⅰ型断裂机理研究" . | 微电子学与计算机 40 . 1 (2023) : 124-129 . |
| APA | 张谋 , 秦飞 , 代岩伟 . 包镍多壁碳纳米管增强SAC305焊料的Ⅰ型断裂机理研究 . | 微电子学与计算机 , 2023 , 40 (1) , 124-129 . |
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Abstract ：
本发明公开一种焊接型IGBT模块键合线拉力测试装置及方法，拉力测试装置包括联轴器，上下两个联轴器分别用销轴安装在微拉伸机的控制器和载荷传感器上；金属拉线钩螺纹连接在上联轴器上；燕尾槽夹具，可调节IGBT模块DBC基板在横向上移动；传动装置，可调节燕尾槽夹具在纵向上移动；夹具底座，用于放置传动装置，用螺钉连接在下联轴器上；本发明可在微拉伸机上实现横向与纵向移动，并且用螺母预紧使其具有定位功能；金属拉线钩采用螺纹连接的方式可随时拆卸更换，可以用来测量不同直径的引线拉力载荷，测试过程中随着金属拉线钩的上升，微拉伸机载荷传感器可输出其载荷‑位移变化曲线，实现测量功率循环后键合线的键合强度的目的。
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| GB/T 7714 | 安彤 , 王琪 , 赵胜军 et al. 一种焊接型IGBT模块键合线拉力测试装置及方法 : CN202310403795.X[P]. | 2023-04-17 . |
| MLA | 安彤 et al. "一种焊接型IGBT模块键合线拉力测试装置及方法" : CN202310403795.X. | 2023-04-17 . |
| APA | 安彤 , 王琪 , 赵胜军 , 秦飞 . 一种焊接型IGBT模块键合线拉力测试装置及方法 : CN202310403795.X. | 2023-04-17 . |
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Abstract ：
In this paper, the residual stresses with a nanoscale depth resolution at TSV-Cu/TiW/SiO2/Si interfaces under different thermal loadings are characterized using the ion-beam layer removal (ILR) method. Moreover, the correlations of residual stress, microstructure, and the failure modes of the interfaces are discussed. The residual stresses at the interfaces of TSV-Cu/TiW, TiW/SiO2, and SiO2/Si are in the form of small compressive stress at room temperature, then turn into high-tensile stress after thermal cycling or annealing. In addition, the maximum residual stress inside the TSV-Cu is 478.54 MPa at room temperature, then decreases to 216.75 MPa and 90.45 MPa, respectively, after thermal cycling and annealing. The microstructural analysis indicates that thermal cycling causes an increase in the dislocation density and a decrease in the grain diameter of TSV-Cu. Thus, residual stress accumulates constantly in the TSV-Cu/TiW interface, resulting in the cracking of the interface. Furthermore, annealing leads to the cracking of more interfaces, relieving the residual stress as well as increasing the grain diameter of TSV-Cu. Besides this, the applicability of the ILR method is verified by finite element modeling (FEM). The influence of the geometric errors of the micro-cantilever beam and the damage to the materials introduced by the focused ion beam (FIB) in the experimental results are discussed.
Keyword ：
TSV interconnected interfaces TSV interconnected interfaces ion-beam layer removal (ILR) method ion-beam layer removal (ILR) method residual stress residual stress thermal loading thermal loading microstructure microstructure
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| GB/T 7714 | Zhang, Min , Chen, Fangzhou , Qin, Fei et al. Correlations between Microstructure and Residual Stress of Nanoscale Depth Profiles for TSV-Cu/TiW/SiO2/Si Interfaces after Different Thermal Loading [J]. | MATERIALS , 2023 , 16 (1) . |
| MLA | Zhang, Min et al. "Correlations between Microstructure and Residual Stress of Nanoscale Depth Profiles for TSV-Cu/TiW/SiO2/Si Interfaces after Different Thermal Loading" . | MATERIALS 16 . 1 (2023) . |
| APA | Zhang, Min , Chen, Fangzhou , Qin, Fei , Chen, Si , Dai, Yanwei . Correlations between Microstructure and Residual Stress of Nanoscale Depth Profiles for TSV-Cu/TiW/SiO2/Si Interfaces after Different Thermal Loading . | MATERIALS , 2023 , 16 (1) . |
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Abstract ：
Bondline thickness effect on fracture behaviors and cohesive zone model (CZM) is an important topic for adhesive joints. In this paper, the fracture and CZM of sintered nano silver adhesive joints are investigated based on end notched flexure (ENF) test. Results show that load versus displacement curves of sintered silver adhesive joints is sensitive to the bondline thickness. With compliance-based beam method (CBBM), the shearing fracture toughness of sintered silver bonded joints heightens with the increase of bondline thickness, which indicates that shearing fracture toughness is highly dependent on bondline thickness. R curves increase steeply for short equivalent crack length and become plateau for long equivalent crack length. The cracking morphology shows that the cracking paths are mainly interfacial and interlayer types. The bilinear CZM is also presented. The bondline thickness effect on CZM parameter is presented and discussed. The CZM given in this paper can be adopted for reliability analysis in power devices.
Keyword ：
sintered silver sintered silver cohesive zone model cohesive zone model shearing fracture toughness shearing fracture toughness end notched flexure test end notched flexure test bondline thickness effect bondline thickness effect
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| GB/T 7714 | Dai, Yanwei , Li, Yanning , Zan, Zhi et al. Bondline thickness effect on fracture and cohesive zone model of sintered nano silver adhesive joints under end notched flexure tests [J]. | FATIGUE & FRACTURE OF ENGINEERING MATERIALS & STRUCTURES , 2023 , 46 (6) : 2062-2079 . |
| MLA | Dai, Yanwei et al. "Bondline thickness effect on fracture and cohesive zone model of sintered nano silver adhesive joints under end notched flexure tests" . | FATIGUE & FRACTURE OF ENGINEERING MATERIALS & STRUCTURES 46 . 6 (2023) : 2062-2079 . |
| APA | Dai, Yanwei , Li, Yanning , Zan, Zhi , Qin, Fei . Bondline thickness effect on fracture and cohesive zone model of sintered nano silver adhesive joints under end notched flexure tests . | FATIGUE & FRACTURE OF ENGINEERING MATERIALS & STRUCTURES , 2023 , 46 (6) , 2062-2079 . |
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Abstract ：
Due to its higher energy and smaller heating area, laser joining technology is widely used in aluminum alloy welding and other industrial fields, which meets the solder sealing requirements for electronic packaging. According to experiments, cracks were prone to occur at the corners and spot-welding positions near the weld. In this paper, the depth and width of the melt pool were measured experimentally, and the results were used to calibrate and validate the heat source model. An empirical relationship between heat source parameters and melt pool morphology is presented. The heat source model of laser deep penetration welding was established under the same experimental conditions. And the results were in agreement with the experimental results. The finite element method was used to numerically simulate the welding process of a 50%SiAl shell and a 27%SiAl cover plate. The effects of different spot-welding sequences and numbers on the residual stress and cracking possibility of laser welded samples were analyzed. The results show that under sequential spot-welding, when the amount of spot-welding is increased, the stress peak value decreases. Compared with sequential spot welding and side-by-side spot welding, the spot-welding sequence of diagonal points first, and then side-by-side spot welding, can effectively reduce the residual stress. This research enables us to provide some guidelines in terms of studying the reliability issues of microwave devices.
Keyword ：
laser spot-welding laser spot-welding deep penetration welding deep penetration welding heat source model calibration heat source model calibration solidification crack solidification crack silicon aluminum alloy silicon aluminum alloy
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| GB/T 7714 | Wang, Song , Shi, Ge , Zhao, Libo et al. Modelling and Optimization of Continual Laser Joining Processes for Silicon Aluminum Alloy in Microwave Devices [J]. | CRYSTALS , 2023 , 13 (4) . |
| MLA | Wang, Song et al. "Modelling and Optimization of Continual Laser Joining Processes for Silicon Aluminum Alloy in Microwave Devices" . | CRYSTALS 13 . 4 (2023) . |
| APA | Wang, Song , Shi, Ge , Zhao, Libo , Dai, Yanwei , Hou, Tianyu , He, Ying et al. Modelling and Optimization of Continual Laser Joining Processes for Silicon Aluminum Alloy in Microwave Devices . | CRYSTALS , 2023 , 13 (4) . |
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