Resistive Switching Effect of BiFeO3 Thin Film Under the Voltage Below the Coercive Voltage - Details

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Abstract：

To　study　the　resistive　effect　of　the　Au/BiFeO3/SrRuO3　fabricated　by　the　pulsed　laser　deposition　on　the　SrTiO3　substrate,　the　resistive　effect　was　characterized　by　the　I-V　curves.　Due　to　the　different　work　function　between　BiFeO3　and　Au,　BiFeO3　and　SrRuO3,　the　stable　Shottky　contact　was　formed　between　the　contact　surface　of　Au/BiFeO3　and　BiFeO3/SrRuO3.　The　Shottky　barrier　height　was　changed　by　application　of　external　voltage　to　control　the　filling　status　of　trap　levels.　Results　show　that　from　the　I-V　curve　the　film　displays　the　resistive　switching　behavior　under　the　voltage　below　the　coercive　voltage,　with　the　resistance　ratio　as　large　as　three　orders.　Through　the　fitting　of　I-V　curves　by　different　conduction　mechanisms,　it　is　confirmed　that　the　conduction　of　the　film　is　dominated　by　the　space　charge　limited　current　(SCLC).　The　trapping　effect　was　proposed　as　the　resistive　switching　mechanism　for　the　BiFeO3　thin　film　below　the　coercive　voltage.　©　2017,　Editorial　Department　of　Journal　of　Beijing　University　of　Technology.　All　right　reserved.

Keyword：

Fe-resistive random access memory; Resistive switching effect; Space charge limited current; Trapping effect

Author Community：

[ 1 ] [Zhu, H.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 2 ] [Zhang, Y.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 3 ] [Wang, P.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 4 ] [Bai, Z.]College of Microelectronics, Fudan University, Shanghai, 200433, China
[ 5 ] [Meng, X.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 6 ] [Chen, Y.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 7 ] [Qi, Q.]National Engineering Research Center for Optoelectronics Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China

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Journal of Beijing University of Technology

ISSN： 0254-0037

Year： 2017

Issue： 3

Volume： 43

Page： 443-447

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