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Author:

Guo, Xia (Guo, Xia.) | Shi, Lei (Shi, Lei.) | Li, Chong (Li, Chong.) | Dong, Jian (Dong, Jian.) | Liu, Bai (Liu, Bai.) | Hu, Shuai (Hu, Shuai.) | He, Yan (He, Yan.)

Indexed by:

EI Scopus SCIE CSCD

Abstract:

Silver nanowire (AgNW) film was proposed to apply on the surface of the vertical-cavity surface-emitting lasers (VCSELs) with large aperture in order to obtain a uniform current distribution in the active region and a better optical beam quality. Optimization of the AgNW film was carried out with the sheet resistance of 28.4 Omega/sq and the optical transmission of 94.8% at 850 nm. The performance of VCSELs with and without AgNW film was studied. When the AgNW film was applied to the surface of VCSELs, due to its better current spreading effect, the maximum output optical power increased from 23.4 mW to 24.4 mW, the lasing wavelength redshift decreased from 0.085 nm/mA to 0.077 nm/mA, the differential resistance decreased from 23.95 Omega to 21.13 Omega, and the far field pattern at 50 mA decreased from 21.6 degrees to 19.2 degrees. At the same time, the near field test results showed that the light in the aperture was more uniform, and the far field exhibited a better single peak characteristic. Various results showed that VCSELs with AgNW on the surface showed better beam quality.

Keyword:

current spreading silver nanowire vertical-cavity surface-emitting laser

Author Community:

  • [ 1 ] [Guo, Xia]Beijing Univ Posts & Telecommun, Sch Elect Engn, Beijing 100876, Peoples R China
  • [ 2 ] [Li, Chong]Beijing Univ Posts & Telecommun, Sch Elect Engn, Beijing 100876, Peoples R China
  • [ 3 ] [Shi, Lei]Beijing Univ Technol, Inst Elect Informat & Control Engn, Photon Device Res Lab, Beijing 100124, Peoples R China
  • [ 4 ] [Dong, Jian]Beijing Univ Technol, Inst Elect Informat & Control Engn, Photon Device Res Lab, Beijing 100124, Peoples R China
  • [ 5 ] [Liu, Bai]Beijing Univ Technol, Inst Elect Informat & Control Engn, Photon Device Res Lab, Beijing 100124, Peoples R China
  • [ 6 ] [Hu, Shuai]Beijing Univ Technol, Inst Elect Informat & Control Engn, Photon Device Res Lab, Beijing 100124, Peoples R China
  • [ 7 ] [He, Yan]Beijing Univ Technol, Inst Elect Informat & Control Engn, Photon Device Res Lab, Beijing 100124, Peoples R China

Reprint Author's Address:

  • 郭霞

    [Guo, Xia]Beijing Univ Posts & Telecommun, Sch Elect Engn, Beijing 100876, Peoples R China;;[Li, Chong]Beijing Univ Posts & Telecommun, Sch Elect Engn, Beijing 100876, Peoples R China

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Source :

CHINESE PHYSICS B

ISSN: 1674-1056

Year: 2016

Issue: 11

Volume: 25

1 . 7 0 0

JCR@2022

ESI Discipline: PHYSICS;

ESI HC Threshold:175

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 5

SCOPUS Cited Count: 5

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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