Silicon　wafer　thinning　is　mostly　performed　by　the　method　of　self-rotating　grinding.　In　grinding,　the　grinding　force　is　a　crucial　factor　of　affecting　the　grinding　performance,　form　accuracy　and　surface/subsurface　thinning　quality.　To　control　the　thinning　quality　of　ground　wafer,　grinding　force　is　the　most　essential　factor　need　to　be　controlled.　However,　no　theoretical　model　is　developed　to　correlate　grinding　parameters　to　grinding　force　yet.　In　this　article,　a　theoretical　model　is　established　based　on　the　removal　behavior　of　silicon,　including　cutting　and　sliding.　For　the　first　time,　the　effects　of　processing　parameters,　wafer　radial　distance　and　crystal　orientation　on　grinding　force　are　quantitatively　described　in　a　theoretical　model.　Excess　grinding　force　causes　local　damage　of　wafer　in　the　form　of　subsurface　cracks,　as　a　determinant　factor　on　the　quality　of　wafer.　Therefore,　nine　sets　of　self-rotating　grinding　experiments　with　variable　processing　parameters　are　performed,　and　the　depth　of　subsurface　cracks　h　are　measured　to　evaluate　the　damage　of　ground　wafer.　Based　on　the　scratching　theory　of　single　abrasive　grain,　the　relationship　between　h　and　the　normal　grinding　force　F-nt　is　found,　which　is　also　validated　by　the　experimental　results.　Finally,　an　optimized　two-stage　process　is　proposed　to　control　subsurface　cracks　and　improve　material　removal　rate　simultaneously,　according　to　the　predictive　model　of　grinding　force.　(C)　2016　Elsevier　Ltd.　All　rights　reserved.