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Author:

Jiang, Minlin (Jiang, Minlin.) | Lan, Fei (Lan, Fei.) | Zhao, Bingxin (Zhao, Bingxin.) | Tao, Quan (Tao, Quan.) | Wu, Jiamin (Wu, Jiamin.) | Gao, Di (Gao, Di.) | Li, Guangyong (Li, Guangyong.)

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Scopus SCIE

Abstract:

The introduction of Cl into CH3NH3PbI3 precursors is reported to enhance the performance of CH3NH3PbI3 solar cell, which is attributed to the significantly increased diffusion lengths of carriers in CH3NH3Pb(I,Cl)(3) solar cell. It has been assumed but never experimentally approved that the defect density in CH3NH3Pb(I,Cl)(3) solar cell should be reduced according to the higher carrier lifetime observed from photoluminescence (PL) measurement. We have fabricated CH3NH3Pb(I,Cl)(3) solar cell by adding a small amount of Cl source into CH3NH3PbI3 precursor. The performance of CH3NH3Pb(I,Cl)(3) solar cell is significantly improved from 15.39% to 18.60%. Results from scanning electron microscopy and X-ray diffraction indicate that the morphologies and crystal structures of CH3NH3PbI3 and CH3NH3Pb(I,Cl)(3) thin films remain unchanged. Open circuit voltage decay and admittance spectroscopy characterization jointly approve that Cl plays an extremely important role in suppressing the formation of defects in perovskite solar cells. Published by AIP Publishing.

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Author Community:

  • [ 1 ] [Jiang, Minlin]Univ Pittsburgh, Dept Elect & Comp Engn, Pittsburgh, PA 15260 USA
  • [ 2 ] [Lan, Fei]Univ Pittsburgh, Dept Elect & Comp Engn, Pittsburgh, PA 15260 USA
  • [ 3 ] [Tao, Quan]Univ Pittsburgh, Dept Elect & Comp Engn, Pittsburgh, PA 15260 USA
  • [ 4 ] [Li, Guangyong]Univ Pittsburgh, Dept Elect & Comp Engn, Pittsburgh, PA 15260 USA
  • [ 5 ] [Zhao, Bingxin]Univ Pittsburgh, Dept Chem & Petr Engn, Pittsburgh, PA 15260 USA
  • [ 6 ] [Wu, Jiamin]Univ Pittsburgh, Dept Chem & Petr Engn, Pittsburgh, PA 15260 USA
  • [ 7 ] [Gao, Di]Univ Pittsburgh, Dept Chem & Petr Engn, Pittsburgh, PA 15260 USA
  • [ 8 ] [Zhao, Bingxin]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China

Reprint Author's Address:

  • [Gao, Di]Univ Pittsburgh, Dept Chem & Petr Engn, Pittsburgh, PA 15260 USA

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Source :

APPLIED PHYSICS LETTERS

ISSN: 0003-6951

Year: 2016

Issue: 24

Volume: 108

4 . 0 0 0

JCR@2022

ESI Discipline: PHYSICS;

ESI HC Threshold:175

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 22

SCOPUS Cited Count: 24

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 9

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