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Author:

Yuan Zhenzhou (Yuan Zhenzhou.) | Liu Danmin (Liu Danmin.) (Scholars:刘丹敏) | Tian Nan (Tian Nan.) | Zhang Guoqing (Zhang Guoqing.) | Zhang Yongzhe (Zhang Yongzhe.) (Scholars:张永哲)

Indexed by:

Scopus SCIE PKU CSCD

Abstract:

Two-dimensional (2D) materials have attracted broad interest because of their low-dimensional effect, and black phosphorus has become a member of them due to the successful preparation. Phosphorus has several allotropes, white phosphorus, red phosphorus and black phosphorus. Black phosphorus is most thermodynamic stable in them. Black phosphorus was obtained by a phase transition from white or red phosphorus at high pressure and high temperature. It is a natural p-type semiconductor in which each layer is vertically stacked by the van der Waals force. The thickness of black phosphorus can be scaled down to the atomic layer scale known as phosphorene by mechanical exfoliation or liquid exfoliation. In nowadays, pulsed laser deposition (PLD) has also been used in synthesis of phosphorene film. Compared with black phosphorus, phosphorene's physical properties have significant changes. The band gap in bulk black phosphorus is 0.3 eV and can be expanded to 1.0 to 1.5 eV depending on the layer numbers. The range of phosphorene band gap corresponds to an absorption spectrum between visible light to infrared. Moreover, the band gap of phosphorene is also highly sensitive to the strain either in-plane or out-of-plane. The phosphorene based field effect transistor (FET) exhibits a high mobility and appreciably high on/off ratios, and the mobility is thickness dependent. Unlike other two-dimensional (2D) materials, phosphorene has in-plane anisotropy which is suitable for the detecting of polarized light. Hence, the unique properties in black phosphorus, along with its high carrier mobility, make it as a promising material in electronic applications. Nevertheless, the poor chemical and structural stability of black phosphorus and phosphorene raises important concerns. In the past century, the synthesis, physical properties, and device applications have been extensively investigated in various studies. In this review article, a lot of references of black phosphorus are cited to introduce systematically the research progresses of structure and preparation, the study of material properties and device performance, the chemistry of the degradation process and the anti-degradation treatments. At last, the development trend of phosphorene is mentioned.

Keyword:

2D semiconducting materials nano device performance black phosphorus preparation material properties

Author Community:

  • [ 1 ] [Yuan Zhenzhou]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing Key Lab Microstruct & Properties Adv Mat, Beijing 100124, Peoples R China
  • [ 2 ] [Liu Danmin]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing Key Lab Microstruct & Properties Adv Mat, Beijing 100124, Peoples R China
  • [ 3 ] [Tian Nan]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing Key Lab Microstruct & Properties Adv Mat, Beijing 100124, Peoples R China
  • [ 4 ] [Zhang Guoqing]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing Key Lab Microstruct & Properties Adv Mat, Beijing 100124, Peoples R China
  • [ 5 ] [Zhang Yongzhe]Beijing Univ Technol, Coll Mat Sci & Engn, Educ Minist China, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China

Reprint Author's Address:

  • 刘丹敏

    [Liu Danmin]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing Key Lab Microstruct & Properties Adv Mat, Beijing 100124, Peoples R China

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Source :

ACTA CHIMICA SINICA

ISSN: 0567-7351

Year: 2016

Issue: 6

Volume: 74

Page: 488-497

2 . 5 0 0

JCR@2022

ESI Discipline: CHEMISTRY;

ESI HC Threshold:221

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count: 16

SCOPUS Cited Count: 20

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 7

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