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Abstract：
High-quality In0.3Ga0.7As films have been epitaxially grown on Si (111) substrate by inserting an InxGa1 (-) As-x interlayer with various In compositions by molecular beam epitaxy. The effect of InxGa1 (-) As-x interlayer on the surface morphology and structural properties of In0.3Ga0.7As films is studied in detail. It reveals that In0.3Ga0.7As films grown at appropriate In composition in InxGa1 (-) As-x interlayer exhibit smooth surface with a surface rootmean-square roughness of 1.7 nm; while In0.3Ga0.7As films grown at different In composition of InxGa1 (-) As-x interlayer show poorer properties. This work demonstrates a simple but effective method to grow high-quality In0.3Ga0.7As epilayers on Si substrates, and brings up a broad prospect for the application of InGaAs-based optoelectronic devices on Si substrates. (C) 2015 Elsevier B.V. All rights reserved.
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THIN SOLID FILMS
ISSN： 0040-6090
Year： 2015
Volume： 597
Page： 25-29
2 . 1 0 0
JCR@2022
ESI Discipline： MATERIALS SCIENCE;
ESI HC Threshold：319
JCR Journal Grade：2
CAS Journal Grade：3
Cited Count：
WoS CC Cited Count： 2
SCOPUS Cited Count： 3
ESI Highly Cited Papers on the List： 0 Unfold All
WanFang Cited Count：
Chinese Cited Count：
30 Days PV： 2
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