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Author:

Fu, Jing (Fu, Jing.) | Hou, Yudong (Hou, Yudong.) (Scholars:侯育冬) | Wei, Qiaoyi (Wei, Qiaoyi.) | Zheng, Mupeng (Zheng, Mupeng.) | Zhu, Mankang (Zhu, Mankang.) | Yan, Hui (Yan, Hui.)

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EI Scopus SCIE

Abstract:

FeTiNbO6 (denoted as FTN) is a recently discovered giant dielectric material with high Curie temperature (550 K). In this work, well dispersive FTN particles with mean particle size about 500 nm were synthesized by the improved solid-state reaction method. Using FTN particles as fillers and poly(vinylidene fluoride) (denoted as PVDF) polymer as matrix, multi-volume ratio (0%-60%) homogeneous ceramic/polymer composites have been prepared through a hot-pressing technology. At the same filling content, the FTN/PVDF composites display higher dielectric permittivity compared to the normal reported BaTiO3/PVDF composites, even larger than that of PVDF based composites using giant dielectric CaCu3Ti4O12 as filler. Especially, for 40 vol.% FTN/PVDF composites, the dielectric permittivity is as high as 181 measured at 100 Hz and 25 degrees C. Through the theoretical analysis correlated with structure evolution observation, it is deduced that the high dielectric performance originates from the combined effect of a variety of factors, such as giant dielectric semiconducting FTN particles, the micro-capacitor structure, and percolation phenomenon at appropriate volume fraction of FTN. Moreover, FTN/PVDF composites present strong dielectric relaxation behavior, which results from the superposition of the dielectric relaxation between PVDF and FTN. These flexible, easy processing FTN/PVDF composites with large dielectric permittivity values could find applications as new generational embedded capacitors. (C) 2015 AIP Publishing LLC.

Keyword:

Author Community:

  • [ 1 ] [Fu, Jing]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 2 ] [Hou, Yudong]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 3 ] [Wei, Qiaoyi]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 4 ] [Zheng, Mupeng]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 5 ] [Zhu, Mankang]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 6 ] [Yan, Hui]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China

Reprint Author's Address:

  • 侯育冬

    [Hou, Yudong]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China

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Source :

JOURNAL OF APPLIED PHYSICS

ISSN: 0021-8979

Year: 2015

Issue: 23

Volume: 118

3 . 2 0 0

JCR@2022

ESI Discipline: PHYSICS;

ESI HC Threshold:190

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 16

SCOPUS Cited Count: 17

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 11

Online/Total:443/10602022
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