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Author:

Jia Yun-Peng (Jia Yun-Peng.) | Zhao Bao (Zhao Bao.) | Yang Fei (Yang Fei.) | Wu Yu (Wu Yu.) | Zhou Xuan (Zhou Xuan.) | Li Zhe (Li Zhe.) | Tan Jian (Tan Jian.)

Indexed by:

EI Scopus SCIE CSCD

Abstract:

The temperature dependences of forward voltage drop (V-F) of the fast recovery diodes (FRDs) are remarkably influenced by different lifetime controlled treatments. In this paper the results of an experimental study are presented, which are the lifetime controls of platinum treatment, electron irradiation treatment, and the combined treatment of the above ones. Based on deep level transient spectroscopy (DLTS) measurements, a new level E6 (E-C-0.376 eV) is found in the combined lifetime treated (CLT) sample, which is different from the levels of the individual platinum and electron irradiation ones. Comparing the tested VF results of CLT samples with the others, the level E6 is responsible for the degradation of temperature dependence of the forward voltage drop in the FRD.

Keyword:

platinum temperature dependence electron lifetime

Author Community:

  • [ 1 ] [Jia Yun-Peng]Beijing Univ Technol, Coll Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 2 ] [Zhao Bao]Beijing Univ Technol, Coll Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 3 ] [Wu Yu]Beijing Univ Technol, Coll Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 4 ] [Zhou Xuan]Beijing Univ Technol, Coll Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 5 ] [Li Zhe]Beijing Univ Technol, Coll Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 6 ] [Tan Jian]Beijing Univ Technol, Coll Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 7 ] [Yang Fei]State Grid Smart Elect Engn, Beijing 100192, Peoples R China

Reprint Author's Address:

  • [Zhao Bao]Beijing Univ Technol, Coll Elect Informat & Control Engn, Beijing 100124, Peoples R China

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Source :

CHINESE PHYSICS B

ISSN: 1674-1056

Year: 2015

Issue: 12

Volume: 24

1 . 7 0 0

JCR@2022

ESI Discipline: PHYSICS;

ESI HC Threshold:190

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 2

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 6

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