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Abstract：
To obtain thermal contact resistance (TCR) between the vertical double-diffused metal-oxide-semiconductor (VDMOS) and the heat sink, we derived the relationship between the total thermal resistance and the contact force imposed on the VDMOS. The total thermal resistance from the chip to the heat sink is measured under different contact forces, and the TCR can be extracted nondestructively from the derived relationship. Finally, the experimental results are compared with the simulation results.
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CHINESE PHYSICS B
ISSN： 1674-1056
Year： 2015
Issue： 7
Volume： 24
1 . 7 0 0
JCR@2022
ESI Discipline： PHYSICS;
ESI HC Threshold：190
JCR Journal Grade：2
CAS Journal Grade：3
Cited Count：
WoS CC Cited Count： 3
SCOPUS Cited Count： 3
ESI Highly Cited Papers on the List： 0 Unfold All
WanFang Cited Count：
Chinese Cited Count：
30 Days PV： 11
Affiliated Colleges：
