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Abstract:
Yb∶KGW激光晶体可用半导体抽运获得瓦级输出,这是由于其本身具备宽的增益带宽(24 nm),大的激光发射截面(2.8×10-20cm2),以及良好的热导性能(3.3 W/m·K)。Yb∶KGW调Q激光器通过透射式新型可饱和吸收材料拓扑绝缘体Bi2Se3实现,获得窄脉宽为1.5μs,中心波长1042 nm,对应脉冲能量为4.7μJ,峰值功率为3.13 W。
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中国激光
Year: 2015
Issue: 08
Volume: 42
Page: 27-30
Cited Count:
WoS CC Cited Count: 0
SCOPUS Cited Count:
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count:
Chinese Cited Count:
30 Days PV: 13
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