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Author:

刘京徽 (刘京徽.) | 田金荣 (田金荣.) | 胡梦婷 (胡梦婷.) | 窦志远 (窦志远.) | 宋晏蓉 (宋晏蓉.) (Scholars:宋晏蓉)

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CQVIP PKU CSCD

Abstract:

Yb∶KGW激光晶体可用半导体抽运获得瓦级输出,这是由于其本身具备宽的增益带宽(24 nm),大的激光发射截面(2.8×10-20cm2),以及良好的热导性能(3.3 W/m·K)。Yb∶KGW调Q激光器通过透射式新型可饱和吸收材料拓扑绝缘体Bi2Se3实现,获得窄脉宽为1.5μs,中心波长1042 nm,对应脉冲能量为4.7μJ,峰值功率为3.13 W。

Keyword:

激光器 被动调Q 半导体抽运 Yb:KGW 拓扑绝缘体

Author Community:

  • [ 1 ] 北京工业大学应用数理学院

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Source :

中国激光

Year: 2015

Issue: 08

Volume: 42

Page: 27-30

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 13

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