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Author:

Chen, Chao (Chen, Chao.) (Scholars:陈超) | Liang, Lu (Liang, Lu.) | Zhang, Ye (Zhang, Ye.) | Chen, Ziguang (Chen, Ziguang.) | Xie, Guangya (Xie, Guangya.)

Indexed by:

CPCI-S EI Scopus SCIE

Abstract:

This research aims to further improve the thermal performance and the heat charge and discharge efficiency of the developed vertical phase change thermal energy storage device (VPCTESD) in order to adapt the application of VPCTESD in solar energy utilization technology and waste heat utilization technology. Based on the developed heat transfer model of VPCTESD, with experiment and numerical simulation methods, this paper proposes the optimization design parameters of VPCTESD filled with PCMs (called DX-53), including the gap between DX-53 slabs, the velocity of HTF (water) in heat transfer unit's flow passage, the thickness of DX-53, the filling height of DX-53 and divergent length of entrance region. The research result provides the reference methods for evaluation of the thermal performance of VPCTESD. (C) 2013 Elsevier B.V. All rights reserved.

Keyword:

Vertical phase change thermal energy storage device (VPCTESD) Experiment Structure optimization design Numerical simulation Heat transfer and flow model

Author Community:

  • [ 1 ] [Chen, Chao]Beijing Univ Technol, Coll Civil Engn, Beijing, Peoples R China
  • [ 2 ] [Liang, Lu]Beijing Univ Technol, Coll Civil Engn, Beijing, Peoples R China
  • [ 3 ] [Zhang, Ye]Beijing Univ Technol, Coll Civil Engn, Beijing, Peoples R China
  • [ 4 ] [Chen, Ziguang]Beijing Univ Technol, Coll Civil Engn, Beijing, Peoples R China
  • [ 5 ] [Xie, Guangya]Beijing Univ Technol, Coll Civil Engn, Beijing, Peoples R China
  • [ 6 ] [Zhang, Ye]Xinjiang Univ, Coll Civil Engn, Urumqi, Peoples R China

Reprint Author's Address:

  • 陈超

    [Chen, Chao]Beijing Univ Technol, Coll Civil Engn, Beijing, Peoples R China

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Source :

ENERGY AND BUILDINGS

ISSN: 0378-7788

Year: 2014

Volume: 68

Page: 679-685

6 . 7 0 0

JCR@2022

ESI Discipline: ENGINEERING;

ESI HC Threshold:176

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 8

SCOPUS Cited Count: 9

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 10

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