Indexed by:
Abstract:
纳米工艺下ASIC芯片的功耗问题将成为未来设计的瓶颈。本文以SD卡Flash控制芯片为例,研究65纳米工艺下逻辑综合阶段降低功耗的手段及措施,分析这些手段对功耗的影响,最终确定最佳低功耗策略,并经流片验证该低功耗策略有效。
Keyword:
Reprint Author's Address:
Email:
Source :
中国集成电路
ISSN: 1681-5289
Year: 2012
Issue: 4
Page: 23-28,50
Cited Count:
WoS CC Cited Count: 0
SCOPUS Cited Count:
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count: 8
Chinese Cited Count:
30 Days PV: 9
Affiliated Colleges: