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Author:

Yue, Yonghai (Yue, Yonghai.) | Liu, Pan (Liu, Pan.) | Deng, Qingsong (Deng, Qingsong.) | Ma, Evan (Ma, Evan.) | Zhang, Ze (Zhang, Ze.) | Han, Xiaodong (Han, Xiaodong.) (Scholars:韩晓东)

Indexed by:

EI Scopus SCIE PubMed

Abstract:

In situ tensile tests of Cu single crystalline nanowires in a high-resolution transmission electron microscope reveal a novel effect of sample dimensions on plasticity mechanisms. When the single crystalline nanowire size was reduced to <similar to 150 nm, the normal full dislocation slip was taken over by partial dislocation mediated plasticity (PDMP). For the first time, we demonstrate this transition in a quantitative manner by assessing the relative contributions to plastic strain from PDMP and full dislocations. The crossover sample size is consistent, well within model predictions. This discovery represents yet another "sample size effect", beyond other reported influence of sample dimensions on the mechanical behavior of metals, such as dislocation starvation or source truncation, and the "smaller is stronger" trend.

Keyword:

quantitative plastic contribution copper nanowire Plasticity mechanisms size dependence in situ TEM

Author Community:

  • [ 1 ] [Ma, Evan]Johns Hopkins Univ, Dept Mat Sci, Baltimore, MD 21218 USA
  • [ 2 ] [Yue, Yonghai]Beijing Univ Technol, Inst Microstruct & Properties Adv Mat, Beijing, Peoples R China
  • [ 3 ] [Liu, Pan]Beijing Univ Technol, Inst Microstruct & Properties Adv Mat, Beijing, Peoples R China
  • [ 4 ] [Deng, Qingsong]Beijing Univ Technol, Inst Microstruct & Properties Adv Mat, Beijing, Peoples R China
  • [ 5 ] [Zhang, Ze]Beijing Univ Technol, Inst Microstruct & Properties Adv Mat, Beijing, Peoples R China
  • [ 6 ] [Han, Xiaodong]Beijing Univ Technol, Inst Microstruct & Properties Adv Mat, Beijing, Peoples R China
  • [ 7 ] [Zhang, Ze]Zhejiang Univ, State Key Lab Si Mat, Dept Mat Sci, Hangzhou 310003, Zhejiang, Peoples R China

Reprint Author's Address:

  • [Ma, Evan]Johns Hopkins Univ, Dept Mat Sci, Baltimore, MD 21218 USA

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Source :

NANO LETTERS

ISSN: 1530-6984

Year: 2012

Issue: 8

Volume: 12

Page: 4045-4049

1 0 . 8 0 0

JCR@2022

ESI Discipline: PHYSICS;

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 111

SCOPUS Cited Count: 114

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 9

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