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Abstract：
Cubic boron nitride (c-BN) thin films are deposited on p-type Si wafers using radio frequency (RF) sputtering and then doped by implanting S ions. The implantation energy of the ions is 19 keV, and the implantation dose is between 10(15) ions/cm(2) and 10(16) ions/cm(2). The doped c-BN thin films are then annealed at a temperature between 400 degrees C and 800 degrees C. The results show that the surface resistivity of doped and annealed c-BN thin films is lowered by two to three orders, and the activation energy of c-BN thin films is 0.18 eV.
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CHINESE PHYSICS B
ISSN： 1674-1056
Year： 2012
Issue： 4
Volume： 21
1 . 7 0 0
JCR@2022
ESI Discipline： PHYSICS;
JCR Journal Grade：3
CAS Journal Grade：4
Cited Count：
WoS CC Cited Count： 10
SCOPUS Cited Count： 9
ESI Highly Cited Papers on the List： 0 Unfold All
WanFang Cited Count：
Chinese Cited Count：
30 Days PV： 6
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