A　low-threshold　and　high-power　oxide-confined　850-nm　AlInGaAs　strained　quantum-well　(QW)　vertical-cavity　surface-emitting　laser　(VCSEL)　based　on　an　intra-cavity　contacted　structure　is　fabricated.　A　threshold　current　of　1.5　mA　for　a　22　mu　m　oxide　aperture　device　is　achieved,　which　corresponds　to　a　threshold　current　density　of　0.395　kA/cm(2).　The　peak　output　optical　power　reaches　17.5　mW　at　an　injection　current　of　30　mA　at　room　temperature　under　pulsed　operation.　While　under　continuous-wave　(CW)　operation,　the　maximum　power　attains　10.5　mW.　Such　a　device　demonstrates　a　high　characteristic　temperature　of　327　K　within　a　temperature　range　from　-12　degrees　C　to　96　degrees　C　and　good　reliability　under　a　lifetime　test.　There　is　almost　no　decrease　of　the　optical　power　when　the　device　operates　at　a　current　of　5　mA　at　room　temperature　under　the　CW　injection　current.