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Author:

Chen Liang (Chen Liang.) | Zhang Wan-Rong (Zhang Wan-Rong.) | Jin Dong-Yue (Jin Dong-Yue.) | Xie Hong-Yun (Xie Hong-Yun.) | Xiao Ying (Xiao Ying.) | Wang Ren-Qing (Wang Ren-Qing.) | Ding Chun-Bao (Ding Chun-Bao.)

Indexed by:

Scopus SCIE PKU CSCD

Abstract:

One method of non-uniform finger spacing is proposed to enhance thermal stability of multiple finger power heterojunction bipolar transistor. Using coupling thermal resistance to characterize the influence of the change of emitter spacing on thermal coupling, the relation between coupling thermal resistance and emitter spacing is obtained. Temperature distribution on the emitter fingers of multi-finger heterojunction bipolar transistor is studied by a numerical electro-thermal model. The results show that the heterojunction bipolar transistor with non-uniform finger spacing has a smaller temperature difference between fingers thant the traditional uniform finger spacing heterojunction bipolar transistor under the same power dissipation. So the method of non-uniform finger spacing is very effective to enhance the thermal stability.

Keyword:

coupling thermal resistance heterojunction bipolar transistor finger spacing

Author Community:

  • [ 1 ] [Chen Liang]Beijing Univ Technol, Coll Elect & Control Engn, Beijing 100124, Peoples R China
  • [ 2 ] [Zhang Wan-Rong]Beijing Univ Technol, Coll Elect & Control Engn, Beijing 100124, Peoples R China
  • [ 3 ] [Jin Dong-Yue]Beijing Univ Technol, Coll Elect & Control Engn, Beijing 100124, Peoples R China
  • [ 4 ] [Xie Hong-Yun]Beijing Univ Technol, Coll Elect & Control Engn, Beijing 100124, Peoples R China
  • [ 5 ] [Xiao Ying]Beijing Univ Technol, Coll Elect & Control Engn, Beijing 100124, Peoples R China
  • [ 6 ] [Wang Ren-Qing]Beijing Univ Technol, Coll Elect & Control Engn, Beijing 100124, Peoples R China
  • [ 7 ] [Ding Chun-Bao]Beijing Univ Technol, Coll Elect & Control Engn, Beijing 100124, Peoples R China

Reprint Author's Address:

  • [Chen Liang]Beijing Univ Technol, Coll Elect & Control Engn, Beijing 100124, Peoples R China

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Source :

ACTA PHYSICA SINICA

ISSN: 1000-3290

Year: 2011

Issue: 7

Volume: 60

1 . 0 0 0

JCR@2022

ESI Discipline: PHYSICS;

JCR Journal Grade:2

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count: 3

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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