YBCO　films　doped　with　Zr　or　substituted　by　Gd　element　were　prepared　by　fluorine-reduced　metal　organic　deposition　(MOD)　on　LAO　single　crystal.　The　influences　of　different　dopants　on　in-field　critical　current　density　(J(c))　of　YBCO　films　were　investigated.　It　is　found　that　the　J(c)　values　of　YBCO　films　in　high　field　were　enhanced　drastically　through　substituting　Y　site　by　Gd　element　partially,　while　the　J(c)　values　of　YBCO　films　in　low　field　are　not　enhanced.　The　J(c)　values　of　YBCO　films　in　low　field　are　improved　significantly　by　adding　extra　Gd　element　into　YBCO　film　because　of　the　formation　of　rare　earth　oxide　particles　in　YBCO　film.　But　in　high　field,　it　has　slight　effect　on　J(c)　values.　It　is　an　effective　method　to　improve　the　property　of　YBCO　film　by　adding　Zr-contained　compounds　into　YBCO　film　to　form　BZO　nano　particles,　which　cart　enhance　J(c)　values　of　YBCO　film　in　low　field　and　M　high　field.　Finally,　the　high　performance　Y0.5Gd0.5BCO　film　incorporated　with　BZO　nano　particles　was　prepared.　The　max　pinning　force　(F-p(max))　is　up　to　16GN/cm(3),　as　higher　as　4　times　of　that　of　pure　YBCO　film.　J(c)　values　of　Y0.5Gd0.5BCO+Zr　film　at　65K　reach　1.31MA/cm(2)(3T)　and　87.71(A/cm(2)(7T).