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Author:

Liu, X. Q. (Liu, X. Q..) | Li, X. B. (Li, X. B..) | Zhang, L. (Zhang, L..) | Cheng, Y. Q. (Cheng, Y. Q..) | Yan, Z. G. (Yan, Z. G..) | Xu, M. (Xu, M..) | Han, X. D. (Han, X. D..) (Scholars:韩晓东) | Zhang, S. B. (Zhang, S. B..) | Zhang, Z. (Zhang, Z..) | Ma, E. (Ma, E..)

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EI Scopus SCIE PubMed

Abstract:

Using electron microscopy and diffraction techniques, as well as first-principles calculations, we demonstrate that as much as 35% of the total Ge atoms in the cubic phase of Ge2Sb2Te5 locate in tetrahedral environments. The Ge-vacancy interactions play a crucial stabilizing role, leading to Ge-vacancy pairs and the sharing of vacancies that clusters tetrahedral Ge into domains. The Ge2Sb2Te5 structure with coexisting octahedral and tetrahedral Ge produces optical and structural properties in good agreement with experimental data and explains the property contrast as well as the rapid transformation in this phase-change alloy.

Keyword:

Author Community:

  • [ 1 ] [Liu, X. Q.]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100022, Peoples R China
  • [ 2 ] [Zhang, L.]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100022, Peoples R China
  • [ 3 ] [Yan, Z. G.]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100022, Peoples R China
  • [ 4 ] [Han, X. D.]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100022, Peoples R China
  • [ 5 ] [Zhang, Z.]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100022, Peoples R China
  • [ 6 ] [Li, X. B.]Jilin Univ, State Key Lab Integrated Optoelect, Coll Elect Sci & Engn, Changchun 130012, Peoples R China
  • [ 7 ] [Zhang, S. B.]Jilin Univ, State Key Lab Integrated Optoelect, Coll Elect Sci & Engn, Changchun 130012, Peoples R China
  • [ 8 ] [Cheng, Y. Q.]Johns Hopkins Univ, Dept Mat Sci & Engn, Baltimore, MD 21218 USA
  • [ 9 ] [Xu, M.]Johns Hopkins Univ, Dept Mat Sci & Engn, Baltimore, MD 21218 USA
  • [ 10 ] [Ma, E.]Johns Hopkins Univ, Dept Mat Sci & Engn, Baltimore, MD 21218 USA
  • [ 11 ] [Zhang, S. B.]Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA
  • [ 12 ] [Zhang, Z.]Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
  • [ 13 ] [Zhang, Z.]Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R China

Reprint Author's Address:

  • [Liu, X. Q.]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100022, Peoples R China

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Source :

PHYSICAL REVIEW LETTERS

ISSN: 0031-9007

Year: 2011

Issue: 2

Volume: 106

8 . 6 0 0

JCR@2022

ESI Discipline: PHYSICS;

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 68

SCOPUS Cited Count: 76

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 11

Online/Total:1001/10619873
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