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Author:

Wang, L. H. (Wang, L. H..) (Scholars:王立华) | Han, X. D. (Han, X. D..) (Scholars:韩晓东) | Zhang, Y. F. (Zhang, Y. F..) (Scholars:张跃飞) | Zheng, K. (Zheng, K..) (Scholars:郑坤) | Liu, P. (Liu, P..) | Zhang, Z. (Zhang, Z..)

Indexed by:

EI Scopus SCIE

Abstract:

ZnO nanowire was bent in a high-resolution transmission electron microscope (HRTEM). The growth process of tensile and compressive stress-induced asymmetrical ZnO quantum dots (QDs) on bent ZnO nanowire (NW) surface was observed in situ at the atomic scale. The positionally resolved atomic-level strain distribution along the radial directions was mapped directly from the atomic-level strained HRTEM images of the bent ZnO NW. The size, growth rate and density of the QDs can be significantly affected by the strain type and magnitude. These results are helpful in controlling the fabrication of ZnO QDs. (C) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Keyword:

Energy barrier Quantum dots Asymmetrical growth

Author Community:

  • [ 1 ] [Wang, L. H.]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 2 ] [Han, X. D.]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 3 ] [Zhang, Y. F.]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 4 ] [Zheng, K.]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 5 ] [Liu, P.]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 6 ] [Zhang, Z.]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 7 ] [Zhang, Z.]Zhejiang Univ, Dept Mat Sci, Hangzhou 310008, Zhejiang, Peoples R China

Reprint Author's Address:

  • 韩晓东

    [Han, X. D.]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China

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Source :

ACTA MATERIALIA

ISSN: 1359-6454

Year: 2011

Issue: 2

Volume: 59

Page: 651-657

9 . 4 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 13

SCOPUS Cited Count: 15

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 12

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