N-doped　CuCrO2　thin　films　were　prepared　by　using　radio　frequency　magnetron　sputtering　technique.　The　XRD　and　XPS　measurements　were　used　to　confirm　the　existence　of　the　N　acceptors　in　CuCrO2　thin　films.　Hall　measurements　show　the　p-type　conduction　for　all　films.　The　electrical　conductivity　increases　rapidly　with　the　increase　in　N　doping　concentration,　and　the　maximum　of　the　electrical　conductivity　of　17　S　cm　(1)　is　achieved　for　the　film　deposited　with　30　vol.%　N2O,　which　is　about　three　orders　of　magnitude　higher　than　that　of　the　undoped　CuCrO2　thin　film.　Upon　increasing　the　doping　concentrations　the　band　gaps　of　N-doped　CuCrO2　thin　films　increase　due　to　the　Burstein-Moss　shift.　(C)　2010　Elsevier　B.V.　All　rights　reserved.