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Author:

He, Hongwen (He, Hongwen.) | Xu, Guangchen (Xu, Guangchen.) | Guo, Fu (Guo, Fu.) (Scholars:郭福)

Indexed by:

EI Scopus SCIE

Abstract:

Effect of current stressing on whisker growth in Cu/Sn-58Bi/Cu solder joints was investigated with current densities of 5 x 10(3) and 10(4) A/cm(2) in oven at different temperatures. Two types of whiskers, columnar-type and filament-type, were observed on the solder film propagating along the surface of the Cu substrate and at the cathode interface, respectively, accompanied with many hillocks formation. Typically, these whiskers were 5-15 mu m in length and 0.06-2 mu m in diameter. EDX revealed that these whiskers and hillocks were mixtures of Sn and Bi rather than single crystal. It should be noted that the sprouted whiskers would not grow any more even if the current-stressing time increased again when the solder joint was stressed under lower current density. Nevertheless, when the current density was up to 10(4) A/cm(2), the whiskers would melt along with the increasing current-stressing time. Results indicated that the compressive stress generated by precipitation of Cu6Sn5 intermetallics provides a driving force for whisker growth on the solder film, and the Joule heating accumulation should be responsible for whisker growth at the cathode interface.

Keyword:

Author Community:

  • [ 1 ] [He, Hongwen]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 2 ] [Xu, Guangchen]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 3 ] [Guo, Fu]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China

Reprint Author's Address:

  • [He, Hongwen]Beijing Univ Technol, Coll Mat Sci & Engn, 100 Ping Le Yuan, Beijing 100124, Peoples R China

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Source :

JOURNAL OF MATERIALS SCIENCE

ISSN: 0022-2461

Year: 2010

Issue: 2

Volume: 45

Page: 334-340

4 . 5 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 18

SCOPUS Cited Count: 18

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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