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Abstract:
Physical and electrical properties of wurtzitic ZnO straight nanowires grown via a vapor-solid mechanism were investigated. Raman spectrum shows four first-order phonon frequencies and a second-order Raman frequency of the ZnO nanowires. Electrical and photoconductive performance of individual ZnO straight nanowire devices was studied. The results indicate that the nanowires reported here are n-type semi-conductors and UV light sensitive, and a desirable candidate for fabricating UV light nanosensors and other applications.
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NANOSCALE RESEARCH LETTERS
ISSN: 1556-276X
Year: 2009
Issue: 2
Volume: 4
Page: 165-168
ESI Discipline: PHYSICS;
JCR Journal Grade:1
CAS Journal Grade:1
Cited Count:
WoS CC Cited Count: 33
SCOPUS Cited Count: 35
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count:
Chinese Cited Count:
30 Days PV: 5
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