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Author:

Li, J. Y. (Li, J. Y..) | Li, H. (Li, H..)

Indexed by:

EI Scopus SCIE

Abstract:

Physical and electrical properties of wurtzitic ZnO straight nanowires grown via a vapor-solid mechanism were investigated. Raman spectrum shows four first-order phonon frequencies and a second-order Raman frequency of the ZnO nanowires. Electrical and photoconductive performance of individual ZnO straight nanowire devices was studied. The results indicate that the nanowires reported here are n-type semi-conductors and UV light sensitive, and a desirable candidate for fabricating UV light nanosensors and other applications.

Keyword:

Nanostructures ZnO Nanosensors

Author Community:

  • [ 1 ] [Li, J. Y.]Univ Sci & Technol Beijing, Dept Phys Chem, Beijing 100083, Peoples R China
  • [ 2 ] [Li, H.]Beijing Univ Technol, Inst Microstruct & Properties Adv Mat, Beijing, Peoples R China

Reprint Author's Address:

  • [Li, J. Y.]Univ Sci & Technol Beijing, Dept Phys Chem, Beijing 100083, Peoples R China

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Related Keywords:

Source :

NANOSCALE RESEARCH LETTERS

ISSN: 1556-276X

Year: 2009

Issue: 2

Volume: 4

Page: 165-168

ESI Discipline: PHYSICS;

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 33

SCOPUS Cited Count: 35

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 5

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