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Abstract：
The CuAl1-xMgxO2 (x = 0, 0.01, 0.02 and 0.05) thin films were successfully deposited on quartz substrate by using the RF magnetron sputtering technique. XRD patterns indicate that the delafossite structure could be guaranteed for all CuAl1-xMgxO2 films. The conductivity measured at room temperature for CuAl0.98Mg0.02O2 film is three orders of magnitude higher than that of undoped CuAlO2 film and the band gaps of CuAl1-xMgxO2 (x = 0, 0.01, 0.02 and 0.05) thin films decrease with the increase of the doping concentration, which is related to the formation Of impurity energy levels with increasing the doping concentration. (c) 2008 Elsevier Ltd. All rights reserved.
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VACUUM
ISSN： 0042-207X
Year： 2008
Issue： 11
Volume： 82
Page： 1321-1324
4 . 0 0 0
JCR@2022
ESI Discipline： MATERIALS SCIENCE;
JCR Journal Grade：3
Cited Count：
WoS CC Cited Count： 56
SCOPUS Cited Count： 59
ESI Highly Cited Papers on the List： 0 Unfold All
WanFang Cited Count：
Chinese Cited Count：
30 Days PV： 9
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