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Author:

Hou, Y. D. (Hou, Y. D..) (Scholars:侯育冬) | Zhu, M. K. (Zhu, M. K..) | Tang, J. L. (Tang, J. L..) | Song, X. M. (Song, X. M..) | Tian, C. S. (Tian, C. S..) | Yan, H. (Yan, H..)

Indexed by:

EI Scopus SCIE

Abstract:

Pb(Zn1/3Nb2/3)(0.20)(Zr0.47Ti0.53)(0.80)O-3 ceramics, with the addition of 0-1.0wt% MnO2, were prepared by conventional mixed-oxide technique in a wide sintering temperature region from 1050 to 1200 degrees C. Microstructural and compositional analyses of these specimens have been carried out using X-ray diffraction (XRD) and scanning electron microscope (SEM). The effects of MnO2 dopants and the sintering temperature on the piezoelectric and dielectric properties of Pb(Zn1/3Nb2/3)(0.20)(Zr0.47Ti0.53)(0.80)O-3 ceramics have been investigated. Compared to higher densified temperature of 1200 degrees C for undoped specimen, the specimens with the MnO2 doping content above 0.2wt% have maximum density at 1100 degrees C sintering temperature. Simultaneously, the optimum piezoelectric properties were also obtained at 1100 degrees C for Mn-modified specimens. The values of electromechanical coupling factor, k(p) and dielectric loss, tan 8 were optimized for 0.5 wt% MnO2 doped specimen (k(p) = 0.65, tan delta = 0.2%), while the mechanical quality factor, Q(m) was maximized for 1.0 wt% MnO2 doped samples (Q. = 1300). In other words, the optimum sintering condition was found. (c) 2005 Elsevier B.V. All rights reserved.

Keyword:

sintering microstructures grain growth ceramics

Author Community:

  • [ 1 ] Beijing Univ Technol, Key Lab Adv Funct Mat China Educ Minist, Beijing 100022, Chao Yang Dist, Peoples R China
  • [ 2 ] Northwestern Polytech Univ, Dept Mat Sci & Engn, Xian 710072, Peoples R China

Reprint Author's Address:

  • 侯育冬

    [Hou, Y. D.]Beijing Univ Technol, Dept Mat Sci & Engn, Beijing 100022, Chao Yang Dist, Peoples R China

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Source :

MATERIALS CHEMISTRY AND PHYSICS

ISSN: 0254-0584

Year: 2006

Issue: 1

Volume: 99

Page: 66-70

4 . 6 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

JCR Journal Grade:2

Cited Count:

WoS CC Cited Count: 7

SCOPUS Cited Count: 8

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 9

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