The　plastic　deformation　features　of　intrinsic　brittle-featured　SiC　nanowires　by　high　resolution　electron　microscopy　have　been　investigated.　Strong　plastic　deformation　strain　fields　were　observed　in　a　bent　SiC　nanowire.　The　achieved　localized　strain　reaches　about　1.5%.　Localized　lattice　bending,　atomic　lattice　disordering,　and　amorphization　are　contribution　factors　to　achieve　the　plastic　deformation.　The　projected　Si-Si　bonding　angle　distribution　on　the　(110)　atomic　plane　demonstrates　the　disordering　features　of　the　bent　SiC　nanowire.　Buckling　is　found　at　the　compressive　side　of　the　bent　SiC　nanowire.　Growth　bending　can　be　achieved　through　{111}　twinning　and　phase　transformation　from　3C　to　2H.　(c)　2005　American　Institute　of　Physics.